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Showing 1 to 1 of 1 for “"Si/Ge growth"”.
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Bi surfactant mediated growth for fabrication of Si,Ge nanostructures and investigation of Si,Ge intermixing by STM
Heteroepitaxial growth of Ge on Si is a prototypical system for studying strained Stranski-Krastanow growth.The technological drawback is that it turns out to be difficult to grow Ge on Si in a controlled layer-by-layer manner. After a few smooth layers have been grown epitaxially, the growth then …