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Showing 1 to 7 of 7 for “"Si(111)-substrate"”.

  1. The formation of epitaxially stabilized nickel and cobalt silicides by pulsed laser annealing

    … of epitaxially stabilised nickel and cobalt silicides by pulsed laser annealing has been investigated. Thermally grown NiSi and CoSi and Si<111> substrate were irradiated with laser pulses in the energy density range between 0.4 - 1.0 J/cm² in an attempt to produce epitaxially stabilized …

    cape-town Repository record for The formation of epitaxially stabilized nickel and cobalt silicides by pulsed laser annealing (opens in a new tab)

  2. Design-space and scalable technology for GaN based power transistors

    As silicon devices approach their intrinsic material and technological limit, there is an opportunity for alternative semiconductor materials to push the performance of electronics forward. Gallium nitride (GaN) has demonstrated very promising performance for advanced electronics, but there is …

    mit Repository record for Design-space and scalable technology for GaN based power transistors (opens in a new tab)

  3. Indium growth and island height control on Si submonolayer phases

    <p>The quantum size effects (QSE) make it possible to control the dimensions of self-assembled nanostructures. An important goal in present day surface science is to grow uniform sized self-assembled nanostructures. One system which has displayed a number of interesting surface structures is Pb/In …

    iastate Repository record for Indium growth and island height control on Si submonolayer phases (opens in a new tab)

  4. Molekularstrahlepitaxie im Materialsystem Ga(N,Sb)

    Die vorliegende Arbeit beschäftigt sich mit dem Sb-Einbau in epitaktischen GaN-Schichten und dem N-Einbau in GaSb-Schichten im Hinblick auf die erstmalige Herstellung eines GaNxSb1-x - Mischkristalls. Die Schichten wurden mit Hilfe der Molekularstrahlepitaxie unter Verwendung von NH3 als N-Quelle, …

    freiburg-diss Repository record for Molekularstrahlepitaxie im Materialsystem Ga(N,Sb) (opens in a new tab)

  5. Influence of the step properties on submonolayer growth of Ge and Si at the Si(111) surface

    … properties on the submonolayer growth at the Si(111) surface. In particular the influence of step properties on the morphology, shape and structural stability of 2D Si/Ge nanostructures was explored. Visualization, morphology and composition measurements of the 2D SiGe nanostructures were …

    aachen Repository record for Influence of the step properties on submonolayer growth of Ge and Si at the Si(111) surface (opens in a new tab)

  6. Growth and characterisation of group-III nitride-based nanowires for devices

    One of the main goals of this thesis was to get more insight into the mechanisms driving the growth of nitride nanowires by plasma-assisted molecular beam epitaxy (PA-MBE). The influence of the group-III and group-V flux as well as the substrate temperature Tsub has been studied leading to the …

    aachen Repository record for Growth and characterisation of group-III nitride-based nanowires for devices (opens in a new tab)

  7. Interfacial processes in Li-ion batteries

    This thesis focuses on interfacial processes in Li ion batteries. Rechargeable Li-ion batteries are among the best technologies available for energy storage in both portable electronics and transportation scale applications. Li-ion batteries store and discharge energy by accumulation and transport …

    uiuc Repository record for Interfacial processes in Li-ion batteries (opens in a new tab)