Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 75 for “"Si(111)"”.
-
Second-harmonic generation as a probe of chemically modified Si(111) surfaces and the initial oxidation of hydrogen terminated Si(111)
… generation (SHG) is used to probe Si(111) surfaces with covalently attached monolayers. The surfaces are prepared using wet chemical modification to form -H, -C 10 H 21 (decyl) and -O-C 10 H 21 (decyloxy) monolayers. The SHG efficiency for these surfaces as well as a Si(111) surface …
-
Optische Dreiwellenspektroskopie an GaAs(001), Si(111) und Pt-Elektrolyt-Grenzflächen
… spectroscopy was used to investigate GaAs(001), Si(111) and Pt-electrolyte interfaces. GaAs(001): The spectral dispersion of the magnitude of the second-order nonlinear susceptibility |æxyz| of GaAs has been determined by second-harmonic generation (SHG) for two-photon energies between 2 eV and 5 …
-
Caracterização estrutural de pontos quânticos e filmes ultrafinos de CdTe/Si(111)
… ultrafinos de CdTe crescidos sobre substrato de Si(111) passivado com hidrogênio. As amostras foram crescidas por epitaxia de paredes quentes e caracterizadas por microscopia de força atômica e difração de raios- especular e incidência rasante.As analises das imagens de microscopia de força …
-
Theoretical study of hydrogen in [alpha]-YH[subscript x] and on Si(111) surface
… hydrogen energy barrier between the interstitial sites. It would be out of reach to address these problems via a first principles technique. With this in mind, an empirical tight binding model is constructed for the simpler Si:H system and applied in a molecular dynamics simulation to study the …
-
Crecimiento y caracterización de nitruros del grupo III sobre Si (111) por epitaxia de haces moleculares
Los nitruros del grupo III (GaN, Aln, InN) han sido considerados durante muchos años como semiconductores ideales para la fabricación de dispositivos optoelectrónicos que funcionen en el margen azul-ultravioleta (UV). La posibilidad de sintetizar los distintos compuestos ternarios, hacen que estas …
-
Berechnung von Stufenkanten auf der As-bedeckten Si(111)-Oberfläche mit einem parallelisierten ab initio Programm
The first part of this thesis presents the parallelisation of the EStCoMPP-code (EStCoMPP is an acronym for "Electronic Structure Code for Materials Properties and Processes"). Using Density-Functional-Theory EStCoMPP simulates many electron systems, found in molecules and solids and computes …
-
Ab initio study of the Si(111)-(7x7) surface reconstruction : a challenge for massively parallel computation
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1993.
-
Influence of material, surface reconstruction and strain on submonolayer growth at Si(111) and Ge(111) surfaces
… reconstruction, and material on the surface diffusion, nucleation, and growth of two-dimensional islands at the initial stage of the epitaxial growth on the Ge(111) and Si(111) surfaces. A set of the template surfaces, which are different only in one particular feature (reconstruction, strain, …
-
Influence of the step properties on submonolayer growth of Ge and Si at the Si(111) surface
… properties on the submonolayer growth at the Si(111) surface. In particular the influence of step properties on the morphology, shape and structural stability of 2D Si/Ge nanostructures was explored. Visualization, morphology and composition measurements of the 2D SiGe nanostructures were …
-
Abscheidung und Zersetzung von Selten-Erd-Oxid-Precursorn auf der H-terminierten Si(111)- und der SiO 2 -Oberfläche
… nasschemischen Präparation der H-terminierten Si(111)-Oberfläche und zur Präparation der Si(111)-7x7-Rekonstruktion im Ultrahochvakuum erfolgreich reproduziert. Eine Precursorlösung wurde über die Applikationsmethoden "drop-cast", "dip-coating" und "liquid-injection-precursor-deposition" auf …
-
Atomic layer deposition Al2O3-passivated AlGaN/GaN high-electron-mobility transistors on Si(111) towards reliable high-speed electronics
(Al)GaN-based transistors are the backbones of next-generation high power/frequency electronics. However, various challenges with this exciting technology still necessitate more comprehensive investigations. In particular, epitaxially growing high-quality (Al)GaN layers on foreign substrates, …
-
GAN-ON- SI(100) NANOSTRUCTURES FOR OPTOELECTRONICS APPLICATIONS
This thesis focused on the development of high quality GaN epilayers for optoelectronics applications. GaN based materials were grown on Si(100) substrates by modifying the surface of the Si(100) substrate to expose the Si(111) planes . The Si(100) plane has a four-fold (square) atomic symmetry …
-
Interfacial Studies of Buried Semiconductor Surfaces
… have been performed on noble-metal/Si(111) and C60/semiconductor systems. The bulk of the noble-metal/Si(111) work has centered on the Ag/Si(111) system where the structure of the interface is dependent on the interfacial preparation. The results of the C60/semiconductor studies …
-
Core-Level Photoemission Studies of the Structure of Semiconductor Surfaces and Interfaces
To determine to the chemical depth profile of the Si(111)/SiO2 interface, the photoemission intensity of the Si 2p core level from the Si(111)/SiO2 system has been measured as a function of photoelectron emission angle. The SiO2 layer is amorphous, and photoelectron diffraction techniques cannot be …
-
Scanning tunneling microscopy and spectroscopy of graphene on semiconducting surfaces
… to better understand the perturbation of the physical and electronic structure of graphene monolayers and bilayers due to interactions with the supporting substrate, we have utilized scanning tunneling microscopy (STM) and spectroscopy (STS) to probe the graphene-substrate interaction for …
-
Deposition of Metal Oxides and Metal Carbonyls on Silicon Surfaces Using Solution Chemistry
The Si-H bonds on the H-Si(111) surface and Co2(CO)8 in n-heptane solution reacted to form a well defined submonolayer coverage of Co(CO)4 above the surface plane of Si(111). Transmission Fourier-transform infrared spectroscopy analysis of (OC) 4Co-Si(111) yielded structural and geometric …
-
Strain at surface and interface steps
Transmission Electron Microscopy (TEM) is a powerful tool for the study of interface and surface phenomena. Its sensitivity to lattice plane orientation allows for the imaging of crystal strain. In this thesis, I will present a unique method for quantitatively measuring crystal strain using TEM. …
-
Cross-Sectional Scanning Tunneling Microscopy of Silicon-Based Heterostructures Andp-N Junctions
This thesis describes the application of cross-sectional STM to the characterization of silicon-based device structures. Several difficulties have been overcome in the process of developing this new structural characterization method. A V-groove cleaving technique has been developed to help produce …
Page 1 of 4