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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 65 for “"Si(111)"”.
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Second-harmonic generation as a probe of chemically modified Si(111) surfaces and the initial oxidation of hydrogen terminated Si(111)
… generation (SHG) is used to probe Si(111) surfaces with covalently attached monolayers. The surfaces are prepared using wet chemical modification to form -H, -C 10 H 21 (decyl) and -O-C 10 H 21 (decyloxy) monolayers. The SHG efficiency for these surfaces as well as a Si(111) surface …
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Caracterização estrutural de pontos quânticos e filmes ultrafinos de CdTe/Si(111)
… ultrafinos de CdTe crescidos sobre substrato de Si(111) passivado com hidrogênio. As amostras foram crescidas por epitaxia de paredes quentes e caracterizadas por microscopia de força atômica e difração de raios- especular e incidência rasante.As analises das imagens de microscopia de força …
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Theoretical study of hydrogen in [alpha]-YH[subscript x] and on Si(111) surface
… hydrogen energy barrier between the interstitial sites. It would be out of reach to address these problems via a first principles technique. With this in mind, an empirical tight binding model is constructed for the simpler Si:H system and applied in a molecular dynamics simulation to study the …
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Crecimiento y caracterización de nitruros del grupo III sobre Si (111) por epitaxia de haces moleculares
Los nitruros del grupo III (GaN, Aln, InN) han sido considerados durante muchos años como semiconductores ideales para la fabricación de dispositivos optoelectrónicos que funcionen en el margen azul-ultravioleta (UV). La posibilidad de sintetizar los distintos compuestos ternarios, hacen que estas …
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Ab initio study of the Si(111)-(7x7) surface reconstruction : a challenge for massively parallel computation
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1993.
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Abscheidung und Zersetzung von Selten-Erd-Oxid-Precursorn auf der H-terminierten Si(111)- und der SiO 2 -Oberfläche
… nasschemischen Präparation der H-terminierten Si(111)-Oberfläche und zur Präparation der Si(111)-7x7-Rekonstruktion im Ultrahochvakuum erfolgreich reproduziert. Eine Precursorlösung wurde über die Applikationsmethoden "drop-cast", "dip-coating" und "liquid-injection-precursor-deposition" auf …
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Atomic layer deposition Al2O3-passivated AlGaN/GaN high-electron-mobility transistors on Si(111) towards reliable high-speed electronics
(Al)GaN-based transistors are the backbones of next-generation high power/frequency electronics. However, various challenges with this exciting technology still necessitate more comprehensive investigations. In particular, epitaxially growing high-quality (Al)GaN layers on foreign substrates, …
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GAN-ON- SI(100) NANOSTRUCTURES FOR OPTOELECTRONICS APPLICATIONS
This thesis focused on the development of high quality GaN epilayers for optoelectronics applications. GaN based materials were grown on Si(100) substrates by modifying the surface of the Si(100) substrate to expose the Si(111) planes . The Si(100) plane has a four-fold (square) atomic symmetry …
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Interfacial Studies of Buried Semiconductor Surfaces
… have been performed on noble-metal/Si(111) and C60/semiconductor systems. The bulk of the noble-metal/Si(111) work has centered on the Ag/Si(111) system where the structure of the interface is dependent on the interfacial preparation. The results of the C60/semiconductor studies …
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Core-Level Photoemission Studies of the Structure of Semiconductor Surfaces and Interfaces
To determine to the chemical depth profile of the Si(111)/SiO2 interface, the photoemission intensity of the Si 2p core level from the Si(111)/SiO2 system has been measured as a function of photoelectron emission angle. The SiO2 layer is amorphous, and photoelectron diffraction techniques cannot be …
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Scanning tunneling microscopy and spectroscopy of graphene on semiconducting surfaces
… to better understand the perturbation of the physical and electronic structure of graphene monolayers and bilayers due to interactions with the supporting substrate, we have utilized scanning tunneling microscopy (STM) and spectroscopy (STS) to probe the graphene-substrate interaction for …
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Deposition of Metal Oxides and Metal Carbonyls on Silicon Surfaces Using Solution Chemistry
The Si-H bonds on the H-Si(111) surface and Co2(CO)8 in n-heptane solution reacted to form a well defined submonolayer coverage of Co(CO)4 above the surface plane of Si(111). Transmission Fourier-transform infrared spectroscopy analysis of (OC) 4Co-Si(111) yielded structural and geometric …
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Strain at surface and interface steps
Transmission Electron Microscopy (TEM) is a powerful tool for the study of interface and surface phenomena. Its sensitivity to lattice plane orientation allows for the imaging of crystal strain. In this thesis, I will present a unique method for quantitatively measuring crystal strain using TEM. …
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Cross-Sectional Scanning Tunneling Microscopy of Silicon-Based Heterostructures Andp-N Junctions
This thesis describes the application of cross-sectional STM to the characterization of silicon-based device structures. Several difficulties have been overcome in the process of developing this new structural characterization method. A V-groove cleaving technique has been developed to help produce …
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Photoemission Studies of *Interface Effects on Thin Film Properties
… the exploration of interfactant effects to physical properties, the thermal stability temperatures of Pb films are measured with photoemission. The quantized electronic structure in Pb films causes the thermal stability to oscillate with an approximate bilayer period. A comparison among the …
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Indium growth and island height control on Si submonolayer phases
<p>The quantum size effects (QSE) make it possible to control the dimensions of self-assembled nanostructures. An important goal in present day surface science is to grow uniform sized self-assembled nanostructures. One system which has displayed a number of interesting surface structures is Pb/In …
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Stress and structure of silicon surfaces
… its properties; the effect of a surface's intrinsic stress, however, is less widely known but just as important. Using the novel technique of ultra-high vacuum transmission electron microscopy, I have investigated both the structure and the stress of the Silicon (111) surface. The kinematic …
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Molecular manipulation with the scanning tunnelling microscope
This thesis presents two studies into molecular manipulation using scanning tunnelling microscopy (STM), dissociation of chrolobenzene (PhCl) and of 4,4´ dichlorobiphenyl (PCB) manipulation both on Si(111)-7×7 surface. An ab initio investigation is presented on a possible candidate for future …
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Photoemission studies of interface effects on thin film properties
… and thermal stability temperatures for Pb(111) films grown on metal-reconstructed Si(111) substrates are shown to be determined by the interfacial conditions produced by the various Si-terminating metals (Au, Ag, In, and Pb), known as interfactants. These properties are probed …
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