Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 92 for “"Si(100)"”.
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Scattering of aligned H₂ from Si(100)
… possessed by the reactants? In surface physics/chemistry the reaction under consideration is often unimolecular, i.e. the adsorption of a molecule onto or its desorption from some surface. In this case the participating degrees of freedom are the translation, vibration, and rotation of the …
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Novel Reactions on Halogen -Terminated Si(100)
… stage of oxidation was studied for H2O-exposed Si(100) in the presence of Cl. Following H2O dissociation and saturation of the surface with Cl, a mild anneal allowed oxygen atoms to insert into Si dimer bonds. It was demonstrated that Cl allowed the bridge-bonded oxygen atoms to be imaged as a …
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Novel reactions on halogen-terminated SI(100)
"The (100) surface of Si is an ideal surface on which to study fundamental processes because of its relative simplicity and its rich literature. In my research, I have sought to elucidate novel surface reactions on halogen-terminated Si(1OO). I have extensively utilized room-temperature and …
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Theoretical study of the molecular processes occurring during the growth of Silicon on Si(100) and SixGe1-x/Si(100)
This thesis summarizes some of the work done in an attempt to elucidate the mechanisms of several surface processes. The focus of this work was on the processes occurring on the surface of pure, strained silicon(100)-2??1 as well as silicon-germanium during the growth of silicon by gas-source …
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GAN-ON- SI(100) NANOSTRUCTURES FOR OPTOELECTRONICS APPLICATIONS
This thesis focused on the development of high quality GaN epilayers for optoelectronics applications. GaN based materials were grown on Si(100) substrates by modifying the surface of the Si(100) substrate to expose the Si(111) planes . The Si(100) plane has a four-fold (square) atomic symmetry …
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Reactive chemisorption of molecular fluorine on Si(100)
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Chemistry, 1989
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The interaction of xenon difluoride with Si(100)
The interaction of low energy XeF2 with Si(100)2x1 has been investigated by studying both the surface-bound and gas-phase products of the reaction. Helium atom diffraction, beam-surface scattering and thermal desorption measurements are the major techniques used to probe the surface-bound products …
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Interactions of Kr(F₂), O₂, and (O₂)₂ with Si(100)
The high reactivity of XeF₂ with fluorinated Si is proposed to arise from localized vibrational excitation of the Si lattice as a result of the multiple collisions required to reverse the momentum of the heavier XeF₂ incident on the lighter Si lattice. This study is part of a series of experimental …
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Atom abstraction in the interaction of F₂ and XeF₂ with Si(100)
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemistry, 1997.
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The chemical dynamics of XeF₂ and Xe(F₂) reactions with Si(100)
… F2, and xenon difluoride, XeF2, with clean Si are nearly indistinguishable. Both species react via the atom abstraction mechanism, whereby a surface dangling bond abstracts a F atom from the incident molecule, scattering the complementary F atom or XeF fragment into the gas phase. However, …
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Ether Chemistry On Si(100) And Desorption Kinetics Of Corresponding Alkyls And Alkoxides
… of a series of alkyls and alkoxides from the Si(100) surface weremeasured to investigate the details of the hydride elimination desorption mechanism.Following the analysis of temperature programmed desorption experiments inconjunction with electronic structure calculations, it was determined …
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Excitation-Induced Ge Quantum Dot Growth on Si(100)-2X1 by Pulsed Laser Deposition
… Ge quantum dots (QD) are grown on Si(100)-(2×1) with laser excitation during growth processes by pulsed laser deposition (PLD). <em>In situ </em>reflection-high energy electron diffraction (RHEED) and post-deposition atomic force microscopy (AFM) are used to study the growth …
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Temperature dependent structural, electronic and optical properties of the Si(100) surface from first principles
The results presented here were obtained using the local density approximation (LDA) to density functional theory (DFT), within the pseudo-potentials scheme. We present the results of the numerical simulations for the Si bulk and Si(100) surface; ab-initio molecular dynamics (AIMD) using the …
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Chemical vapor deposition of β-SiC thin films on Si(100) in a hot wall reactor
A systematic method was developed for the deposition of β-SiC thin films on Si(100) substrates in a hot wall reactor, using low pressure chemical vapor deposition (LPCVD). Due to poor adhesion resulting from lattice mismatch and difference in thermal expansion coefficients between the (SiC films …
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Quantum dynamical study of Si(100) surface-mounted, STM-driven switches at the atomic and molecular scale
The aim of this thesis is the quantum dynamical study of two examples of scanning tunneling microscope (STM)-controllable, Si(100)(2x1) surface-mounted switches of atomic and molecular scale. The first example considers the switching of single H-atoms between two dangling-bond chemisorption sites …
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Synthesis and Characterization of Branched and Hyperbranched Polyetherimides and Selective Chemistry on the Nanolithographically Defined Silicon(100) Surface
"Part II of this thesis describes studies regarding spatially defined, area selective chemistry on the Si(100)-2 x 1 surface. Using the tip of a scanning tunneling microscope (STM) as a localized electron beam, hydrogen can be site selectively removed from the hydrogen-terminated Si(100)-2 x 1 …
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Etching, Roughening, and Patterning of Silicon(100) With Halogens
… the surface modification dynamics of Cl- and Br-Si(100)-(2 x 1) were studied. Chlorine (Bromine) caused surface roughening that created pits and regrowth islands with minimal desorption of SiCl 2 (SiBr2). The roughening and equilibrium morphologies at 700--750 K for surfaces with various …
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The development of alkoxy-based sol-gel processing for magnetoresistive manganite thin films
… process for integrating thin films of magnetoresistive doped-lanthanide manganites onto silicon-based substrates. Crystallization of the requisite perovskite phase at temperatures below 650°C resulted from the incorporation of all-alkoxide precursors, and in particular, Mn[OC(CH 3 ) 3 )] 2 . …
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Reactive magnetron deposition and characterization of ZrN thin films for decorative and field emission applications
Zirconium nitrite (ZrN) films were deposited on substrates of Si<100>, Aluminium strip, brass strips and glass, by DC magnetron sputtering system under varying conditions of power, pressure, argon and nitrogen gas flow rates as well as temperature, and were characterized by SEM/EDX, AFM, Colour …
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