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Showing 1 to 3 of 3 for “"Semiconductor device modeling"”.

  1. Physical Modeling of Silicon Carbide Power Junction Field Effect Transistor and Model Levels For Semiconductor Devices

    … promising material for next-generation power semiconductor devices due to its superior physical properties in terms of switching speed, breakdown voltage, maximum operating temperature, high thermal conductivity, high current density, and extremely stable chemical characteristics. Currently, …

    south-carolina Repository record for Physical Modeling of Silicon Carbide Power Junction Field Effect Transistor and Model Levels For Semiconductor Devices (opens in a new tab)

  2. Device Characterization and Compact Modeling of the SiGe HBT in Extreme Temperature Environments

    … the development of the SiGe HBT. However, the device's excellent electrical performance goes beyond the commercial environment. The SiGe HBT performs exceptionally at low temperatures. The device DC current gain and AC small-signal gain significantly increase in the cryogenic temperature range. …

    arkansas Repository record for Device Characterization and Compact Modeling of the SiGe HBT in Extreme Temperature Environments (opens in a new tab)

  3. Distributed Modeling Approach for Electrical and Thermal Analysis of High-Frequency Transistors

    … in this dissertation is focused on developing modeling approaches for analyzing high-frequency transistors and present solutions for optimizing the device output power and gain. First, a literature review of different transistor types utilized in high-frequency regions is conducted and gallium …

    arkansas Repository record for Distributed Modeling Approach for Electrical and Thermal Analysis of High-Frequency Transistors (opens in a new tab)