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Showing 1 to 20 of 28 for “"Semiconductor Physics"”.

  1. Topics in semiconductor physics: Part I. Phonons in semiconducting alloys and alloy superlattices ; Part II. Deep energy levels of defects in mercury cadmium telluride and wurtzite semiconductors

    … part deals with deep energy levels of defects in semiconductors. In Part I, densities of phonon states are evaluated using the recursion method for quasi-binary III-V semiconducting alloys: [equations] metastable (III-V)1_xIV2x alloys: (GaSb)1_xGe2x and (GaAs)1_xGe2x; and alloy superlattices: …

    uiuc Repository record for Topics in semiconductor physics: Part I. Phonons in semiconducting alloys and alloy superlattices ; Part II. Deep energy levels of defects in mercury cadmium telluride and wurtzite semiconductors (opens in a new tab)

  2. Photoemission and scanning tunneling microscope studies of quantum well and metal layer structures

    … has been mostly confined to the realm of semiconductor physics. However, the experiments described in this thesis demonstrate that such metal structures can be successfully probed with angle-resolved photoemission, revealing interesting electronic properties of these systems and opening a …

    uiuc Repository record for Photoemission and scanning tunneling microscope studies of quantum well and metal layer structures (opens in a new tab)

  3. Multilevel Methods for the Poisson-Boltzmann Equation

    … partial differential equation arising in biophysics. This problem has several interesting features impacting numerical algorithms, including discontinuous coefficients representing material interfaces, rapid nonlinearities, and three spatial dimensions. Similar equations occur in various …

    uiuc Repository record for Multilevel Methods for the Poisson-Boltzmann Equation (opens in a new tab)

  4. Insulated gate bipolar transistor (IGBT) simulation using IG-Spice

    A physics-based insulated gate bipolar transistor (IGBT) model has been successfully implemented into a widely available circuit simulation package, IG-Spice. Based on the semiconductor physics, the model accurately predicts the nonlinear junction capacitance variations, recombinations, and …

    vt Repository record for Insulated gate bipolar transistor (IGBT) simulation using IG-Spice (opens in a new tab)

  5. Position sensitive detectors in GaAs

    … original motivation being experimental particle physics. An account is given of basic semiconductor physics relevant to particle detectors. A review of electronics applicable to reading out charged signals from semiconductor detectors is included. Applications of gallium arsenide X-ray detectors …

    glasgow Repository record for Position sensitive detectors in GaAs (opens in a new tab)

  6. Silicon carbide as a photoconductive switch material for high power applications

    … PCSS analysis is presented and compared with semiconductor physics models. The methods used to determine the density and recombination cross section of interband dopants is also presented. A method to improve the hold off voltage of the PCSS by many orders of magnitude is proposed. Laser …

    missouri Repository record for Silicon carbide as a photoconductive switch material for high power applications (opens in a new tab)

  7. Low temperature studies of transport in silicon MOSFETs.

    … is the outcome of three years work in the semiconductor Physics group at the Cavendish Laboratory, during which time I was financially _supported by the Science and Engineering Research Council. Many thanks are due to my supervisor, Mike Pepper, for his advice and enthusiastic …

    cambridge

  8. Modeling of electroluminescence in InSb quantum wells and inversion asymmetric effects

    … the more usual semi classical models used in semiconductor physics. The final expression for the spectral emittance has a different dependence compared to the semi classical expression, namely the prefactor in the newly derived expression is proportional to 2 . We use the combination of 8 band …

    lancaster

  9. Transient optical and electrical effects in polymeric semiconductors

    Classical semiconductor physics has been continuously improving electronic components such as diodes, light-emitting diodes, solar cells and transistors based on highly purified inorganic crystals over the past decades. Organic semiconductors, notably polymeric, are a comparatively young field of …

    potsdam-diss Repository record for Transient optical and electrical effects in polymeric semiconductors (opens in a new tab)

  10. Determining Energy Relaxation Length Scales in Two-Dimensional Electron Gases

    Modern semiconductor physics research is often carried out at low temperatures where the carrier mobility is high and the thermal broad- ening of quantised energy levels is minimised. 4.2 K, the temperature of liquid helium, is thought of as relatively warm. Temperatures of 300 mK and below are …

    cambridge Repository record for Determining Energy Relaxation Length Scales in Two-Dimensional Electron Gases (opens in a new tab)

  11. Ultrafast terahertz spectroscopy and control of collective modes in semiconductors

    … (THz) spectroscopy to study several aspects of semiconductor physics and in particular of collective mode excitations in semiconductors. We detect and analyze THz radiation emitted by these collective modes to reveal the underlying physics of many-body interactions. We review a design, …

    unm Repository record for Ultrafast terahertz spectroscopy and control of collective modes in semiconductors (opens in a new tab)

  12. Theory of topological insulators and its applications

    <p>An important pursuit in semiconductor physics is to discover new materials to sustain the continuous progress and improvements in the current electronic devices. Traditionally, three material types are in use: 1) Metals 2) Semiconductors 3) Insulators. All the three material types are classified …

    purdue-thes Repository record for Theory of topological insulators and its applications (opens in a new tab)

  13. Design of Functional Active RF Metamaterials with Embedded Transistor-Based Circuits and Devices

    … design with a brief</p><p>introduction to the semiconductor physics important to aid in the understanding of</p><p>the full active metamaterial design and fabrication process.</p><p>The subsequent chapters detail our specic contributions to the eld of func-</p><p>tional active RF metamaterials. …

    duke Repository record for Design of Functional Active RF Metamaterials with Embedded Transistor-Based Circuits and Devices (opens in a new tab)

  14. Experimental Realisation of Energy Harvesters built from Quantum Dots and Quantum Wells

    … starts with an introduction to the background semiconductor physics required for carrying out this PhD research. I have then presented the work that demonstrates, both theoretically and experimentally, an energy harvester built from two resonant-tunnelling quantum dots. A device, proposed by …

    cambridge Repository record for Experimental Realisation of Energy Harvesters built from Quantum Dots and Quantum Wells (opens in a new tab)

  15. Network Integration of a Quantum Dot Entangled Photon-pair Source

    … entangled photon-pair sources based on semiconductor quantum dots are promising devices for the construction of a secure quantum network, thanks to their natural lack of multi photon-pair generation. In the previous decades, we have witnessed the achievements on a large variety of …

    cambridge Repository record for Network Integration of a Quantum Dot Entangled Photon-pair Source (opens in a new tab)

  16. Development of 1GHz Clocked Entangled LEDs for Fibre Networks

    Semiconductor quantum dots (QD)s have been well established as sources of single photons and entangled photon-pairs, both of which are essential for realising quantum networks. To be compatible with real-world applications, such a source must further conform to basic requirements including …

    cambridge Repository record for Development of 1GHz Clocked Entangled LEDs for Fibre Networks (opens in a new tab)

  17. Sub-10-nanometre metallic gaps for use in molecular electronics

    This thesis presents the development of a selective-etch fabrication process to create sub-10 nanometre metallic gaps and the subsequent use of the gaps to study the electronics of nanocrystals and molecules. A complete picture of the success of the process required both examination by scanning …

    cambridge Repository record for Sub-10-nanometre metallic gaps for use in molecular electronics (opens in a new tab)

  18. On-Chip Multiplexers for Transferable Nanomaterials: Design, Fabrication and Applications

    The development of scalable, on-chip multiplexing technology, capable of electrically characterising an array of nanomaterial field-effect transistors at cryogenic temperatures, is described. The channel in each transistor in the array is a nanomaterial which is transferred onto the multiplexer …

    cambridge Repository record for On-Chip Multiplexers for Transferable Nanomaterials: Design, Fabrication and Applications (opens in a new tab)

  19. Fabrication of electroluminescent silicon diodes by plasma ion implantation

    This thesis describes the fabrication and testing of electroluminescent diodes made from silicon subjected to plasma ion implantation. A silicon-compatible, electrically driven light source is desired to increase the speed and efficiency of short-range data transfer in the communications and …

    sask Repository record for Fabrication of electroluminescent silicon diodes by plasma ion implantation (opens in a new tab)

  20. Semiconductor nanodevices as a probe of strong electron correlations

    … other electrons? In one dimension (1D), the physics of interacting electrons is captured well at low energies by the linear Tomonaga- Luttinger Liquid (TLL) model, with hallmark predictions, such as spin-charge separation, having already been observed. Recent theoretical work has focused on …

    cambridge Repository record for Semiconductor nanodevices as a probe of strong electron correlations (opens in a new tab)

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