Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 154 for “"Semiconductor Materials"”.
-
Laser-enhanced plasma etching of semiconductor materials
… and under some conditions, etch activation. Materials were tested which are most-frequently used in semiconductor devices – namely Si, SiO2, and Cu. A 100 Hz, 7 ns pulse width Q-switched Nd:YAG laser was applied at its 1064, 532, and 266 nm modes. Using the 532 nm line on Si (40 mJ/cm²/pulse) …
-
Atom probe tomography study of wide bandgap semiconductor materials
… on developing atom probe tomography (APT) for semiconductors. APT is quickly gaining interest in the field of material characterization because of its unique ability to provide 3D nanoscale studies. APT has been widely used in metals and conductive materials but design changes in the tool in …
-
Terahertz optoelectronics components of semiconductor materials with deep defects /
… defect band was determined for aforementioned materials. For the case of LT GaAs these parameters were equal to εdef = 0.77 eV and Δεdef = 78 meV; for the case of LT In0.7Ga0.3As were equal to εdef = 0.4 eV and Δεdef = 70 meV respectively. Finally, terahertz bursts system pumped with …
-
Novel dilute nitride semiconductor materials for mid-infrared applications
… through the development of novel dilute nitride materials. InAsN shows a large bandgap reduction with a small lattice mismatch when a small amount of nitrogen is introduced into the host InAs. Because the InAsN reported so far had generally poor crystalline quality and exhibited weak luminescence …
-
Simulation of Thermal Effects in Semiconductor Materials and Devices
… deals with the thermal properties of semiconductors, the interaction between thermal and electrical transport, and the numerical methods for their simulation. The approach is based on the Boltzmann transport equation which is used to describe the behavior of both electrons and phonons …
-
Investigation of new semiconductor materials for wide band-gap devices
… of wide bandgap III-nitride and gallium oxide semiconductor materials using scanning electron microscopy techniques. The primarily used techniques used here were wavelength dispersive X-ray spectroscopy (WDX) and cathodoluminescence (CL) with other electron microscopy and spectroscopic …
-
Two-dimensional transition metal dichalcogenides as next generation semiconductor materials
In recent years 2D materials, and more specifically transition metal dichalcogenisdes (TMD) MoS2 and WS2 have been investigated in the field of semiconductors as they exhibit energy gaps which span from semi-metals through to wide band gap semiconductors. Due to their thickness on an atomic scale, …
-
A Study of Newtron Irradiation Effects on Gallium Arsenide Semiconductor Materials
Made available in DSpace on 2017-07-06T18:59:35Z (GMT). No. of bitstreams: 3 Yang_Siyuan_MS.pdf: 40469799 bytes, checksum: 1b8400059c7276e82d663b03f596a858 (MD5) Yang_Siyuan_MS_ABS.pdf: 573254 bytes, checksum: 6d52f1d60dcb222b600aa29c8bbb880d (MD5) license.txt: 4813 bytes, checksum: …
-
Characterization of reactive ion etching of III-V compound semiconductor materials
Reactive ion etching (RIE) of III-V compound semiconductor materials such as InP, InGaAs, InAlAs, and InGaAsP in methane (CH$\sb4$) gas mixtures has been investigated. Etch rates of 800, 400 and 600 A are obtained for InP, InGaAs, and InGaAsP, respectively. Optimum processes have been developed for …
-
Monolithic integration of III-V semiconductor materials and devices with silicon
… Institute of Technology, Dept. of Materials Science and Engineering, 1999.
-
Metal-assisted chemical etching of III-V semiconductor materials for optoelectronic applications
Made available in DSpace on 2016-03-02T19:33:17Z (GMT). No. of bitstreams: 2 ZHAO-THESIS-2015.pdf: 2077971 bytes, checksum: 160453c3994747e9326d0908a0f90983 (MD5) LICENSE.txt: 4207 bytes, checksum: badcc874098be4440f0e37e192b9525d (MD5) Previous issue date: 2015-10-07
-
Wafer Bonding With Low-Temperature Grown Compound Semiconductor Materials for Optoelectronic Device Application
Finally, I developed two methods to transfer a GaAs-based device layer on a transparent GaP substrate (for emission wavelength longer than 560 nm), which involve multiple processing techniques. One approach also includes the regrowth step, which further indicates the bonded sample can further be …
-
High Density Plasma Etching of Wide Bandgap Semiconductor Materials for Fabricating Novel Devices
We also demonstrated the fabrication of recessed 0.15 mum gate-length AlGaN/GaN HEMTs using ICP-RIE on sapphire substrate. These devices exhibited high DC and RF performance. The drain current density as high as 1.31 A/mm, a peak transconductance of 401 mS/mm, an fT of 107 GHz and an f max of 148 …
-
Chemical bath deposition and electrodeposition of epitaxial semiconductor materials for application in photovoltaic devices
… The first two appendices cover the supplementary materials for Papers I and II. The third appendix has unpublished results on thermal transformation of electrodeposited magnetite and ferrihydrite into hematite"--Abstract, page iv.
-
Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control
… is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound semiconductor material are explained and data from recent commissioning work on a newly installed reactor at the University of Illinois …
-
Nanoscale Semiconductor Materials and Devices Employing Hybrid 1D and 2D Structures for Tunable Electronic and Photonic Applications
… Purdue University, December 2013. Nanoscale Semiconductor Materials and Devices employing Hybrid 1D and 2D structures for Tunable Electronic and Photonic Applications. Major Professor: Dr. David B. Janes.</p> <p>Continued miniaturization of microelectronic devices over past decades has …
-
Chemical beam, gas-source molecular beam, and molecular beam epitaxial growth of III/V compound semiconductor materials
A new and unique high vacuum crystal growth system has been developed. The gas source molecular beam/chemical beam epitaxial growth system features a 7000 l/s diffusion pumping system mounted directly beneath a molecular beam epitaxial growth chamber. After careful thermal cleaning of the new …
-
Analysis of heat transfer, stability, and dynamics of Czochralski and liquid encapsulated Czochralski growth of semiconductor materials
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1986.
-
The growth and characterization of III-V compound semiconductor materials by metalorganic chemical vapor deposition and laser photochemical vapor deposition
Despite the vast use of metalorganic chemical vapor deposition (MOCVD) for the growth of optical and electronic devices, it is a process for which the details of the reaction mechanisms are not well understood. Efforts aimed at gaining insight into growth-related matters will be described here and …
Page 1 of 8