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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 30 for “"Semi-insulating"”.
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Semi-insulating indium phosphide grown with a carbon tetrachloride doping source
Made available in DSpace on 2011-05-07T14:21:31Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9625135.pdf: 3807051 bytes, checksum: 7bf8cacdaf2de061db1c74c508219314 (MD5) Previous issue date: 1996
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Electrokinetic pumping of semi-insulating liquids by traveling wave high voltages
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1989.
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High Growth Rate and High Purity Semi-Insulating Epitaxy Using Dichlorosilane For Power Devices
… SiC has great potential to replace conventional semiconductors in high frequency applications. Semi-insulating (SI) epitaxial layers are required to achieve this. Most common method for introducing the SI property to the substrate is to use vanadium as a deep level dopant to pin the Fermi level …
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Surface-interface states and the Hall effect measurement of epitaxial and semi-insulating liquid-encapsulated Czochralski gallium arsenide
… p-type epitaxial GaAs and undoped and Cr-doped semi-insulating (SI) LEC GaAs has been studied. The surface-potential changes were induced by wet chemical treatments in ammonium hydroxide and hydrogen peroxide to modify the surface-interface state distribution. The experimental results for …
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Photoreflectance and Its Application to Semiconductor Characterization
… means for the study and characterization of semiconductors. The system includes a microcontroller-based servomechanism to drive a variable neutral density filter for signal normalization. System performance under different conditions has been investigated. The methods to suppress the noise in …
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Low Temperature Electron Irradiation Induced Defects in Gallium-Arsenide: Bulk and Surface Acoustic Wave Studies
… symmetry and were observed in n-type and semi-insulating GaAs with bulk and surface acoustic waves (SAW) respectively. Bulk waves at eight frequencies between 9 and 130 MHz and SAW at 73 and 145 MHz were used. The reorientation kinetics of both peaks follow the Arrhenius law.
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Low Dislocation Density Gallium Nitride Templates and Their Device Applications
… for conductive templates, and the AIN buffer for semi-insulating templates. On SiN x nanonetwork templates, double-barrier RTD and superlattice (SL) exhibited negative differential resistances. Moreover, the injection current of Blue LEDs (450 nm) was improved ∼30%. On semi-insulating GaN …
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Picosecond Dynamics of Free-Carrier Populations, Space-Charge Fields, and Photorefractive Nonlinearities in Zincblende Semiconductors
… only a few milliwatts of average power.Compound semiconductors are important photorefractive materials because they offer a near-infrared optical response, and because their carrier transport properties allow the index change to be generated quickly and efficiently. While many researchers have …
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Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels
… patterning an array of Au seeds on semi-insulating GaAs substrate. The GaAs NWs assemble by lateral epitaxy via a vapor-liquid-solid mechanism and align in parallel arrays as a result of the (100) GaAs crystal plane orientation; then, a thin-film AlGaAs layer conforms to the GaAs NWs …
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Electromagnetic modeling of terahertz quantum cascade laser waveguides and resonators
… resonators. Both metal-metal and semi-insulating (SI) surface-plasmon geometries were investigated. Waveguide simulations extend previous one-dimensional analyses to two dimensions; resonator simulations in two and three dimensions are presented for the first time. The waveguide …
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Photo-Hall studies of compound semiconductors
The III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave device applications. Temperature dependent photo-Hall effect measurements have been made on the high purity compound semiconductors GaAs, InP and a ternary alloy …
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MULTICOLOR INFRARED DETECTION USING STEP QUANTUM WELLS
… grown by molecular beam epitaxy (MBE) on (100) semi-insulating GaAs substrate.
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Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy
… planar GaAs NWs were monolithically grown on semi-insulating GaAs (100) substrate using metal-organic chemical vapor deposition (MOCVD). The realization of lateral p-n junction diodes was confirmed by measuring two terminal I-V characteristics of the devices. The device was turned on at 1.2 V …
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Terahertz quantum cascade lasers
… in the terahertz with photon energies below the semiconductor Reststrahlen band. Photons are emitted via electronic intersubband transitions that take place entirely within the conduction band, where the wavelength is chosen by engineering the well and barrier widths in multiple-quantum-well …
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Morphology, structure and electronic properties of CdTe surfaces studied by scanning tunneling microscopy
… vacuum tunneling processes for both n-type and semi-insulating material. For the (111) surface, a (2x2) reconstruction consisting of a cadmium vacancy structure was found. For the (-1-1-1) surface, a very disordered c(8x4) reconstruction was observed, consisting of a complicated tellurium …
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Low temperature electron irradiation induced defects in gallium arsenid: Bulk and surface acoustic wave studies
… symmetry and were observed in n-type and semi-insulating GaAs with bulk and surface acoustic waves (SAW) respectively.· Bulk waves at eight frequencies between 9 and 130 MHz and SAW at 73 and 145 MHz were used. The reorientation kinetics of both peaks follow the Arrhenius law. The …
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Gallium Nitride-Based HEMTs for Microwave Power and Noise: Physics and Application
… chemical vapor deposition (MOCVD) on semi-insulating SiC substrates is reported. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for …
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Indium-Gallium-Arsenide Quantum Wire Infrared Photodetectors
… wire infrared photodetectors (QRIPs) grown on semi-insulating (001) on-axis InP substrates via solid-source molecular beam epitaxy (MBE) have been fabricated and characterized. The quantum wires (QWRs) were formed using an in situ on-step strain-induced lateral-layer ordering (SILO) method. The …
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Polycrystalline Silicon TFTs for Large Area Electronic Application
… work, the transient characteristic of the SI (semi-insulating held plate) high voltage poly-Si TFT has been experimentally examined. The resistivity of the held plate affects the transient response. In addition, the performances of three novel high voltage poly-Si TFT’s have been presented. …
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Metal-insulator-insulator-metal plasmonic waveguides and devices
… of active region thickness are investigated for semi-insulating surface-plasmon and metal-metal waveguides, respectively. A surface emitting quantum cascade laser SP leaky waveguide are proposed, with emission properties controlled by varying plasma layer thickness.
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