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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 3 of 3 for “"Selective area growth (SAG)"”.
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Quantum well devices fabricated using selective area growth and their application in optical fiber communication
In this thesis we discuss the advantage of the selective area growth (SAG) approach to manufacturing integrated quantum-well lasers and modulators. SAG can be successfully achieved with two major growth techniques: metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We …
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Development of Gallium Nitride-Based Power Electronic Devices Using Plasma-Assisted Molecular Beam Epitaxy
… GaN compound semiconductors includes thin film growth, material characterization, device fabrication, and device characterization using state-of-the-art semiconductor processing equipment and characterizing tools. High-quality GaN films grown by plasma-assisted molecular beam epitaxy (PAMBE) are …
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Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy
… study of the application of the PAMBE-SAG technique to fabrication of high-power GaN-based switching HEMTs. First, a detailed study of the efficacy of SAG was conducted by comparing it with ion-implantation, a popular technique for improving Ohmic contacts. A consistent improvement in …