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Showing 1 to 1 of 1 for “"Selective area epitaxy (SAE)"”.
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Quantum well devices fabricated using selective area growth and their application in optical fiber communication
In this thesis we discuss the advantage of the selective area growth (SAG) approach to manufacturing integrated quantum-well lasers and modulators. SAG can be successfully achieved with two major growth techniques: metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We …