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Showing 1 to 10 of 10 for “"Schottky junction"”.

  1. Design and fabrication of field-effect III-V Schottky junction solar cells

    … on design and fabrication of single and multi-junction solar cells using III-V materials has been shown and proved. Schottky solar cells based on metal-(insulator)-semiconductor (M-I-S) structure have been designed and fabricated using various wide bandgap semiconductors, such as GaAs and …

    must-thes Repository record for Design and fabrication of field-effect III-V Schottky junction solar cells (opens in a new tab)

  2. Fluidic characterization of electric field sensitivity of Ti-GaAs Schottky junction gated field-effect biosensors

    … of fluid gated metalsemiconductor hybrid (MSH) Schottky structures consisting of a Titanium layer on ntype GaAs. Compared to standard field-effect sensors, the MSH Schottky structures show 21 times larger resistance change with electric field at -46.6 V/cm. The fluidic gate voltages are mirrored …

    uiuc Repository record for Fluidic characterization of electric field sensitivity of Ti-GaAs Schottky junction gated field-effect biosensors (opens in a new tab)

  3. Electrodeposition and characterization of metals and metal oxides for energy conversion and storage

    … Si from corrosion, the Au buffer layer forms a Schottky junction with n-Si and exhibits electronic properties useful for photoelectrochemical cells"--Abstract, page iv.

    must-thes Repository record for Electrodeposition and characterization of metals and metal oxides for energy conversion and storage (opens in a new tab)

  4. Electrical characterisation of emerging photo anodes suited to water dissociation with an applied bias

    … such as indium-tin-oxide, which would create a Schottky junction with the silicon below, or to use very thin oxides such as titanium dioxide, which when a catalyst is deposited on top creates a MOS structure. Of interest to the first option are the electrical properties of the Schottky junction

    cork Repository record for Electrical characterisation of emerging photo anodes suited to water dissociation with an applied bias (opens in a new tab)

  5. Synthesis and characterization of TiO2 nanotube Schottky diodes

    … rectifying metal-semiconductor interface, or Schottky junction, throughout an ordered array of semiconducting nanotubes. The atomic layer deposition (ALD) technique offers a precise, conformal growth mechanism and was used to deposit a continuous platinum (Pt) Schottky contact throughout the …

    missouri Repository record for Synthesis and characterization of TiO2 nanotube Schottky diodes (opens in a new tab)

  6. Energy level engineering in colloidal quantum dot solar cells

    … may be attained for ZnO / PbS QD heterojunction photovoltaics through the incorporation of a MoO3 interlayer between the PbS QD film and the top-contact anode. The deep-work-function MoO3 layer mitigates a Schottky junction that would otherwise form at the PbS / anode interface, …

    mit Repository record for Energy level engineering in colloidal quantum dot solar cells (opens in a new tab)

  7. Visible and Infrared Light Detection Using 2D Materials

    … within the 10 µm - 20 µm band. Specifically, schottky junction thin-film Platinum (Pt)/WSe₂/Gold (Au) were shown to exhibit large improvements in the short circuit current and open circuit voltage due to antireflection coating effects, surface doping, and surface trap passivation. A single …

    mit Repository record for Visible and Infrared Light Detection Using 2D Materials (opens in a new tab)

  8. High Temperature SiC Embedded Chip Module (ECM) with Double-sided Metallization Structure

    … surrounding the chip, but chiefly caused by the Schottky junction and the chip passivation layer. Finally, steady-state and transient measurements are conducted in terms of the thermal measurements. The steady-state thermal measurement is used to demonstrate the cooling system reduction. To …

    vt Repository record for High Temperature SiC Embedded Chip Module (ECM) with Double-sided Metallization Structure (opens in a new tab)

  9. Electrical detection of atmospheric pollutants and detergents on silicon

    … (NO2), and silicon surfaces on ambipolar silicon junctionless nanowire transistors (Si-JNTs) (Chapter 2). Experimental work and density functional theory (DFT) modelling demonstrate that NO2 functions as a "pseudo" molecular dopant, influencing key device parameters across p-type and n-type …

    cork Repository record for Electrical detection of atmospheric pollutants and detergents on silicon (opens in a new tab)

  10. Design of Novel Devices and Circuits for Electrostatic Discharge Protection Applications in Advanced Semiconductor Technologies

    … distinct from GaAs, the leaky problem of the schottky junction and the lack of choice of passive/active components in GaN technology limit the ESD protection design, which will be discussed in this dissertation. However, a promising ESD protection clamp is finally developed based on …

    ucf