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Showing 1 to 17 of 17 for “"Schottky barriers"”.
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InAlAs/InGaAs/InP HEMTs with pseudomorphic Schottky barriers
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
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Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications
In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky barrier fabrication. This low energy …
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THE ROLE OF NATIVE POINT DEFECTS AND SURFACE CHEMICAL REACTIONS IN THE FORMATION OF SCHOTTKY BARRIERS AND HIGH N-TYPE DOPING IN ZINC OXIDE
… and the impact of native point defects on Schottky barrier formation and doping.</p><p>The results presented here use a complement of depth-resolved cathodoluminescence spectroscopy (DRCLS), atomic force microscopy (AFM), Kelvin probe force microscopy (KPFM), and surface photovoltage …
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Spintronic and plasmonic applications of electrodeposition on semiconductors
… Si and Ge is an excellent method to create Schottky barriers and that this method has a number of unique advantages over other (physical) deposition methods. These advantages can be used to improve the prospects of applications in the area of Spintronics and Plasmonics.<br/>Firstly, the …
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Study of surface modifications for improved selected metal (II-VI) semiconductor based devices.
… devices. There are many competing theories of Schottky barrier formation but as yet no quantitative predictive model exists to adequately explain metal-semiconductor interfaces. The II-VI compound semiconductors CdTe, CdS and ZnSe have recently come to the fore with the advent of high …
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Integration of electrodeposited PdNi alloys with silicon and carbon nanotube electronics
… shows the formation of high quality PdNi-Si Schottky barriers while magnetic measurements prove the ferromagnetic nature of the PdNi films. Electrodeposited PdNi films are thus shown to be suitable contacts for electronic and spintronic devices.<br/><br/>Hydrogen sensors comprising back to …
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Quantum capacitance measurements of single-layer molybdenum disulfide
… quantum-capacitance was observed due to large Schottky barriers between the metal contacts and the molybdenum disulfide. Lessons learned from this investigation inform improved fabrication and measurement techniques for future iterations of these fascinating devices.
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Modeling and Simulation of Electron Transport through Nanoscale Heterojunctions
… which typically produce considerable resistance. Schottky barriers formed at CNT-metal contacts have been well known to be crucial for the performance of CNT based field effect transistors (FETs). Through an extensive first principles calculations we show that an optical nanowelding process can …
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Material and device aspects of semiconducting two-dimensional crystals
… on/off switching was revealed to be dominated by Schottky barriers at metal contacts. Finally, the transport properties and device performance of p-type phosphorene crystals were investigated. Semiconducting 2D crystals are very promising candidates for future electronic and optoelectronic device …
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Properties and sensor performance of zinc oxide thin films
… components of the total resistance including Schottky barriers at the Pt-ZnO interfaces and a DC bias induced constriction resistance within the ZnO films. Time dependent drift in resistance of ZnO films has been observed. Without applied bias, the ZnO films showed a fast and a slow resistance …
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Functional heterointerfaces via electromodulation spectroscopy
… active layers, rather than minimisation of the Schottky barriers at electrode/polymer contacts, holds the key in realising high-performance organic light-emitting devices.
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Probing Nanoscale Functional Properties of Perovskite and Wurtzite Ferroelectrics via Scanning Probe Microscopy
… in polar wurtzite structure MZO to customize the Schottky barrier at the ferroelectric/metal interface. Asymmetric resistive switching behavior has been found in Pt/Mg0.2Zn0.8O/ITO heterostructures with modulated back-to-back Schottky diode configuration. This finding introduces an innovative …
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semiconducting carbon nanotube transistors: electron and spin transport properties
… literature. Semiconducting SWNTs (s-SWNTs) with Schottky-barrier contacts are measured at high bias. Nearly symmetric ambipolar transport is observed, with electron and hole currents significantly exceeding 25 µA, the reported current limit in m-SWNTs. Four simple models for the field-dependent …
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The control of metal-NiNGaAs and NiNAlAs interfaces by cryogenic processing.
… formed at 80K exhibit significantly higher Schottky barriers (&phis;b=0.45 eV) than In diodes formed at 294K (&phis;b=0.30 eV), whereas Au diodes formed on In[0.53]Ga[0.47]As(100) at either low temperature or room temperature exhibit Ohmic behaviour. The reactions occurring during interface …
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The Bulk and Interfacial Electronic and Chemical Structure of Amorphous Hydrogenated Boron Carbide
… a detailed examination of the formation of Schottky barriers was implemented. Throughout this dissertation the chemical structure was studied. One study was to understand various growth conditions. The effects of the PECVD growth parameters were evaluated by comparing changes in atomic …
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Nanoscale Characterisation of Heterointerfaces in 2D Materials
… CM-SEM and map out the electric fields caused by Schottky barriers at the contacts, finding nanoscale variations. Finally, we perform CL on a 2D lateral heterostructure sample, allowing characterisation of its interface with a nanoscale probe. We use these signals to demonstrate the universality …
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Towards building a prototype spin-logic device
… GSHE metal. Finally, this work also proposes a Schottky-barrier model to describe the current flow through low-dimensional semiconductors and uses it to extract the band gap of black-phosphorus thin-films in an attempt to characterize novel 2D-materials.</p>