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Showing 1 to 17 of 17 for “"Schottky barrier height"”.
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Power Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications
… BN/β-Ga2O3 metal-insulator-semiconductor Schottky barrier diodes (MIS SBDs). The BN layer is directly grown on the β-Ga2O3 by pulsed laser deposition (PLD). The presence of a ~2.8 nm BN layer is confirmed by a series of techniques, including X-ray photoelectron spectroscopy (XPS), Raman …
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The Effect of Pressure on The Height of The Schottky Barrier for Several Semiconductors (Diodes, Metal-Contacts)
… effect of pressure (to (TURN)10 kilobars) on the schottky barrier height at the metal-semiconductor interface. Results are presented for CdS, CdSe, and ZnO together with measurements of the absorption edges for CdSe and ZnO. These results are used in conjunction with previously published flatband …
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Electrical properties of metal semiconductor contacts - metals on MoS2: a case study
… MoS2, are presented in the research. Schottky barrier height and Schottky-Mott rules are discussed. The current-voltage measurement and capacitance-voltage measurement are analyzed considering the role of the work function. We mainly focus on metal semiconductor contacts on molybdenum …
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Electrical properties of metal/wse2structures
… on the electrical properties of metal/WSe2 Schottky barrier diodes with various metals such as Au, In, Al, and Ga in the temperature range of 80K to 400K well within the domain of thermionic emission theory. Topics covered here include the factors that determine the Schottky barrier height, …
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Fabrication and characterization of AIGaN/GaN HEMTs
… of ohmic contact using Ti/Al/Pd/Au, and Schottky contact using Pd/Au on AlGaN/GaN HEMT has been developed. A specific contact resistance of 1.08 x 10-7 W cm2 was achieved and an Schottky barrier height of 1.12eV was reached. Large dimension AlGaN/GaN HEMT devices with two different …
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Investigation of dye-sensitized solar cell performance with single chirality semiconducting carbon nanotubes
… carbon nanotubes allow adjustment of the Schottky barrier height at the TiO2/CNT/FTO interface and the presence of single-chirality bundles increases electron diffusion in the photoanode. Furthermore, chirality separated CNTs are expected to absorb less light than mixed chirality CNTs …
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Design and fabrication of field-effect III-V Schottky junction solar cells
… using III-V materials has been shown and proved. Schottky solar cells based on metal-(insulator)-semiconductor (M-I-S) structure have been designed and fabricated using various wide bandgap semiconductors, such as GaAs and Al<sub>0.3</sub>Ga<sub>0.7</sub>As. A secondary bias layer has been …
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Phase-Engineered Field-Effect Transistors Based on Two-Dimensional Transition Metal Dichalcogenides
… large contact resistance is due to an enlarged schottky barrier height resulting from strong fermi-level pinning and the existence of van der Waal gaps at the metal/TMDC interface and in-between TMDC layers. The ultimate solution to the contact issue is to utilize lateral metallic-semiconducting …
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Photoemission studies of interface effects on thin film properties
… of its quantum well states. Specifically, the Schottky barrier heights and thermal stability temperatures for Pb(111) films grown on metal-reconstructed Si(111) substrates are shown to be determined by the interfacial conditions produced by the various Si-terminating metals (Au, Ag, In, and …
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Electronic structure, defect formation and passivation of 2D materials
… theory (DFT) which provides robust results. The Schottky barrier height (SBH) is calculated for hexagonal nitrides. The SBH has a linear relationship with metal work function but the slope does not always equal because Fermi level pinning (FLP) arises. The chemical trend of FLP is investigated. …
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Hydrogen in aluminum oxide and at the aluminum oxide/aluminum interface: an ab initio thermodynamics and Monte Carlo investigation
… titanium dopants improve the properties of Al₂O₃ barriers by eliminating the concentration of protons and trapping hydrogen at aluminum vacancy sites. Following this, we determine the evolution of the atomic and electronic structure of the Al₂O₃/Al interface during oxide growth and in the presence …
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Impact of uniaxial strain on P-channel 111-V quantum-well field effect transistors
… were found relevant for QWFET operations: Schottky barrier height change and the piezoelectric effect. Threshold voltage (VT) and gate capacitance (CG) of the QW-FETs were found to be changed by these two effects. For the first time, the piezoresistance coefficients for the three pchannel …
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Metal-aluminium gallium nitride Schottky contacts formation.
… followed by 600°C annealing, yield a Schottky barrier height of 0.82 eV with ideality factor n = 1.21.XPS and I-V results on Ag/Al[x]Ga[1]-[x]N and Ni/Al[x]Ga[1]-[x]N are compared and discussed in terms of current models of Schottky barrier formation.
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Nanoelectronic Devices using Carbon Nanotubes and Graphene Electrodes: Fabrication and Electronic Transport Investigations
… high-performance devices is a large interfacial barrier formation at metal/semiconductor interface originated from Schottky barrier and interfacial dipole barrier which causes inefficient charge injection at the interface. Therefore, having a favorable contact at electrode/semiconductor is highly …
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Two-dimensional Electronics: From Material Synthesis to Device Applications
Two-dimensional (2D) materials have attracted extensive research interest in recent years. Among them, graphene and the semiconducting transition metal dichalcogenides (TMDs) are considered as promising candidates for future device applications due to their unique atomic thickness and outstanding …
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OPTICAL CHARACTERIZATION OF WIDE ENERGY AGP GROUP III-NITRIDE SEMICONDUCTORS
… to study the undoped GaN, n-type GaN, Au-Schottky contacts on GaN, and piezoelectric effects in AIGaN/InGaN/GaN heterostructures. With the assistance of the PV spectra, we found that both the free exciton transitions and the band-to-band transitions contributed to the PR signals of undoped …
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Band Engineering of Advanced Materials for Semiconductor Devices
… + U scheme is further applied to calculate the Schottky barrier heights (SBHs) at various metal–oxide interfaces. The metal-induced gap states (MIGS) model is demonstrated to be a reliable simplified approach for predicting the pinning effect. A similar investigation involving high-κ …