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Showing 1 to 13 of 13 for “"Schottky barrier diodes"”.
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Diamond Schottky barrier diodes
… results exhibited by silicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since 2001, showed the potential of wide band gap semiconductors for replacing silicon (Si) in the range of medium to high voltage applications, where high frequency operation is required. With …
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Design, Fabrication, and Packaging of Gallium Oxide Schottky Barrier Diodes
… fabrication, and packaging of vertical Ga2O3 Schottky barrier diodes (SBDs). The power SBD allows for a small forward voltage and a fast switching speed; thus, it is ubiquitously utilized in power electronics systems. It is also a building block for many advanced power transistors. Hence, the …
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Electronic properties and microstructure of nanoparticulate silicon systems for diode applications
… the design, fabrication, and characterization of Schottky barrier diodes using silicon nanoparticulate composites. Within this work it could be shown, that silicon nanoparticles produced by high energy milling can be used to replace the pigment in water-based graphic inks, which on curing have …
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An Analysis of Traveling - Wave Mixer Structures (Signal Processing)
… delay line transfer functions and for Schottky barrier diodes. These are combined to form models of real time convolver devices. These functions are implemented utilizing acoustic charge transport technology, an approach which permits broad band delay lines, nonlinear elements, and …
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Electrical properties of metal/wse2structures
… on the electrical properties of metal/WSe2 Schottky barrier diodes with various metals such as Au, In, Al, and Ga in the temperature range of 80K to 400K well within the domain of thermionic emission theory. Topics covered here include the factors that determine the Schottky barrier height, …
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Power Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications
… BN/β-Ga2O3 metal-insulator-semiconductor Schottky barrier diodes (MIS SBDs). The BN layer is directly grown on the β-Ga2O3 by pulsed laser deposition (PLD). The presence of a ~2.8 nm BN layer is confirmed by a series of techniques, including X-ray photoelectron spectroscopy (XPS), Raman …
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Efficiency enhancement techniques for RF and millimeter wave power amplifiers
… was operated at 2.14 GHz and was built around Schottky barrier diodes custom fabricated in a 0.13 [mu]m CMOS process. It is the first experimental demonstration that resistance compression networks can be used for energy recycling in multi-gigahertz applications.
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Characterization of epitaxial semiconductor films by scanning tunneling microscopy at ambient pressure
… regions resemble the IV characteristics of Schottky barrier diodes. A new imaging method is proposed which exploits the contrast between the n- and p-type IV curves. Imaging in this mode is achieved by repetitively interrupting the constant-current feedback loop during the scan and recording …
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GaN-on-Silicon HEMTs and Schottky diodes for high voltage applications
… High Electron Mobility Transistors (HEMTs) and Schottky barrier diodes with superior performance, even when compared to devices based on state-of-the-art technologies such as Silicon Carbide or superjunctions. Furthermore, epitaxial growth of GaN layers on silicon wafers allows a significant …
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A Low Temperature Co-fired Ceramic (LTCC) Interposer Based Three-Dimensional Stacked Wire Bondless Power Module
… (IGBT) devices in parallel and two 1200 V 20 A Schottky barrier diodes (SBD) in an antiparallel configuration. A novel interconnection scheme with conductive clamps and a spring loaded LTCC interposer is introduced to establish electrical connection between the stand-alone power modules to …
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Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes
… and packaging of vertical β-Ga2O3 Schottky barrier diodes (SBDs) and P-N diodes. The power SBDs allow for a small forward voltage and a fast switching speed; thus, it is ubiquitously utilized in power electronics systems. Meanwhile, the Ga2O3 power P-N diodes have the benefit of …
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Diamond power electronics for the next generation electric grid
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01
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Photonic studies of defects and amorphization in ion beam damaged GaAs surfaces
… model. Metal-Insulator-Semiconductor (MIS) type Schottky barrier diodes and photodiodes were fabricated employing both thermal and anodic oxides. Diode parameters were evaluated as a function of ion-beam energy. An increase in reverse saturation current density accompanied by an increase in the …