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Showing 1 to 20 of 31 for “"Schottky Diodes"”.

  1. Synthesis and characterization of TiO2 nanotube Schottky diodes

    … rectifying metal-semiconductor interface, or Schottky junction, throughout an ordered array of semiconducting nanotubes. The atomic layer deposition (ALD) technique offers a precise, conformal growth mechanism and was used to deposit a continuous platinum (Pt) Schottky contact throughout the …

    missouri Repository record for Synthesis and characterization of TiO2 nanotube Schottky diodes (opens in a new tab)

  2. Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes

    … current- voltage (IV) behavior of GaN-based Schottky diodes is discussed first. Here, a new model is developed to explain better the temperature dependent performance typically associated with a multi-Gaussian distribution of barrier heights at the metal-semiconductor interface [Section 3.1]. …

    vt Repository record for Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes (opens in a new tab)

  3. GaN-on-Silicon HEMTs and Schottky diodes for high voltage applications

    … High Electron Mobility Transistors (HEMTs) and Schottky barrier diodes with superior performance, even when compared to devices based on state-of-the-art technologies such as Silicon Carbide or superjunctions. Furthermore, epitaxial growth of GaN layers on silicon wafers allows a significant …

    cambridge Repository record for GaN-on-Silicon HEMTs and Schottky diodes for high voltage applications (opens in a new tab)

  4. Generation of noise power at THz frequencies using CMOS schottky diodes in avalanche breakdown

    The viability of using CMOS schottky diodes in avalanche breakdown to generate noise power at THz frequencies was evaluated. Two sets of test diodes manufactured in TSMC's 65nm CMOS process were characterized in order to determine the optimal diode design for generating noise power. Measurements …

    mit Repository record for Generation of noise power at THz frequencies using CMOS schottky diodes in avalanche breakdown (opens in a new tab)

  5. The Effects of High Pressure on The Photovoltage Spectrum of Cadmium-Sulfide and Cadmium-Selenide Schottky Diodes

    … on the photovoltage spectrum of CdS and CdSe Schottky diodes has been investigated. These diodes exhibit a photovoltage at photon energies less than the energy gap of the semiconductor. This photovoltage is due to excitation of electrons from interface states to the conduction band of the …

    uiuc Repository record for The Effects of High Pressure on The Photovoltage Spectrum of Cadmium-Sulfide and Cadmium-Selenide Schottky Diodes (opens in a new tab)

  6. Advanced process development for contacts to algan/gan high electron mobility transistors (HEMTS)

    … Pt, Ir, and Au--were comparatively studied as Schottky metallizations to GaN and AlGaN/GaN heterostructures. Ni/Au, Ni/Pt/Au, Ir/Au, Ir/Pt/Au and Pt/Au Schottky diodes were fabricated on GaN and AlGaN/GaN substrates. Schottky barrier heights ranging from 0.8 to 0.9 eV were obtained as-deposited …

    uiuc Repository record for Advanced process development for contacts to algan/gan high electron mobility transistors (HEMTS) (opens in a new tab)

  7. A Study on the Nature of Anomalous Current Conduction in Gallium Nitride

    … examined with electrical measurements on NiIAu Schottky diodes and CAFM. Current-voltage (IV) mechanisms will identify conduction mechanisms on diodes, and CAFM measurements will investigate the microstructure of conduction in GaN thin films. With CAFM, enhanced conduction has been shown to …

    vcu Repository record for A Study on the Nature of Anomalous Current Conduction in Gallium Nitride (opens in a new tab)

  8. Integration of aligned arrays of single-walled carbon nanotubes in electronic devices

    … Pd to be a good Ohmic contact and Ca to be a Schottky contact to the aligned arrays of SWNTs and went on to fabricate Schottky diodes. Using these Schottky diodes, we demonstrated light emitting diodes with aligned arrays of SWNTs which could be used in novel applications that require solid …

    uiuc Repository record for Integration of aligned arrays of single-walled carbon nanotubes in electronic devices (opens in a new tab)

  9. Design of class E resonant rectifiers for very high frequency power conversion

    … and explained. Additionally, the performance of Schottky diodes in very high frequency (VHF) rectifiers is explored. It has been found that diodes have increased losses when switched at VHF and this phenomenon varies by manufacturer and device specifications. A study of diodes in Class E …

    mit Repository record for Design of class E resonant rectifiers for very high frequency power conversion (opens in a new tab)

  10. Perylene Diimide Molecular Glass: Investigations of Charge Transport

    … and electrodes were selected to produce Schottky diodes. Experiments were carried out to characterize this new molecular glass perylene diimide. The new material shows evidence of traps, hysteresis, and other behaviours that are explored in this thesis. The material shows some potential …

    queens Repository record for Perylene Diimide Molecular Glass: Investigations of Charge Transport (opens in a new tab)

  11. Self-Aligned Fabrication of Nanogap Based Zinc Oxide Nanowire Schottky Devices Using Adhesion Lithography

    … contact), acted as the seed layer. To make the Schottky contact, 40 nm thick Au was thermally evaporated, resulting in nanowire Schottky diodes. The diodes exhibited rectification ratio of > 10$^4$ at low operating voltage of ±1 V with minimal OFF state currents of < 30 pA. Compared to thin film …

    cambridge Repository record for Self-Aligned Fabrication of Nanogap Based Zinc Oxide Nanowire Schottky Devices Using Adhesion Lithography (opens in a new tab)

  12. Electrically active defects in novel Group IV semiconductors.

    … which lead to the fabrication of a diamond Schottky diode with acceptable characteristics. Current-Voltage (I-V) and Capacitance-Voltage (C-V) measurements were carried out to study the electrical properties of both the diamond and SiGe Schottky diodes. Deep level transient spectroscopy …

    sheffield-hallam Repository record for Electrically active defects in novel Group IV semiconductors. (opens in a new tab)

  13. Electrical analysis of low energy argon ion bombarded GaAs

    An electrical analysis was done on A1 and Au Schottky diodes fabricated on n-type (100) GaAs which had been bombarded with low energy Ar ions. The purpose of this study was to quantify electrically damage caused by the Ion Beam Etching (IBE) as functions of energy and fluence. Electrical studies …

    vt Repository record for Electrical analysis of low energy argon ion bombarded GaAs (opens in a new tab)

  14. Development of vertical bulk gallium nitride power devices

    … of GaN under high electric fields. Vertical Schottky diodes with multi-finger anodes are simulated, fabricated and characterized. Evidence of impact ionization and signs of avalanche breakdown are shown. The second aspect is scalable fabrication technologies for vertical power FinFETs. Key …

    mit Repository record for Development of vertical bulk gallium nitride power devices (opens in a new tab)

  15. A Constant ON-Time 3-Level Buck Converter for Low Power Applications

    … DCM (discontinuous conduction mode) and use of Schottky diodes in lieu of the synchronous MOSFETs, Q3 and Q4. The 3-level buck converter operates in CCM for heavy load above 330 mA and DCM for light load below 330 mA. The first method uses a COT (constant on-time) valley current mode controller …

    vt Repository record for A Constant ON-Time 3-Level Buck Converter for Low Power Applications (opens in a new tab)

  16. Additive Fabrication and Soft -Lithographic Patterning of Microelectronic Devices

    … The fabrication of platinum silicide Schottky diodes described in chapter 3 demonstrates the efficacy of soft-lithographically molded polymer templates for the selective deposition of platinum by CVD and the use of this same polymer template as a resist to buffered HF/NH4F oxide …

    uiuc Repository record for Additive Fabrication and Soft -Lithographic Patterning of Microelectronic Devices (opens in a new tab)

  17. Antenna-coupled Infrared And Millimeter-wave Detectors: Fabrication, Measurement And Optimization

    … bolometer, and a patch antenna coupled to a SiC Schottky diode. Electromagnetic modeling of the antennas helped guide the design of antennas with better impedance matching to the detectors. Schottky diodes are discussed as detectors for millimeter-wave and infrared radiation, with the goal of …

    ucf

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