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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 26 for “"Schottky Diode"”.
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The use of nanowires for the production of a power Schottky diode
… has been aimed at producing such a device, a Schottky diode, which has been constructed in such a manner that it will be more energy efficient than a similar device made the traditional way, using the principle of surface area to volume ratio. The Schottky diode has a characteristic that the …
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MICRO-CIRCUIT DIODE FOR ULTRA-LOW-POWER ENERGY HARVESTING
… as the first power conditioning stage. The Schottky diode has a 0.15 V - 0.2 V threshold voltage and can not extract energy efficiently at low voltage. Other technologies such as MOSFET bridge or active diode are designed to minimize the voltage drop to reduce the conduction loss. However, …
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Electrically active defects in novel Group IV semiconductors.
… which lead to the fabrication of a diamond Schottky diode with acceptable characteristics. Current-Voltage (I-V) and Capacitance-Voltage (C-V) measurements were carried out to study the electrical properties of both the diamond and SiGe Schottky diodes. Deep level transient spectroscopy …
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Ion -Implanted GaAs MESFET MMICs for 77-Ghz Automotive Radar
… linear and noise models for the MESFET and Schottky diode and synthesizes models for a variety of coplanar passive components. All of the models are verified with comparisons to measured data through W-band. This work then presents measured and simulated performance characteristics of the …
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The integration of active silicon components in polymer microfluidic devices
… are utilized in the fabrication of an ultra-thin Schottky diode for use as a transmission radiation particle detector for focused ion-beams. Finally, the optoelectronic properties of silicon are used as a photoconductive layer in light-induced dielectrophoretic manipulation of cells. These three …
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Phase-locking terahertz quantum cascade lasers for high dynamic range heterodyne imaging
… thesis, an optical phase-locked loop using a Schottky diode mixer and 3rd order DFB QCLs is implemented to achieve a maximum SNR of 60 dB, limited by residual phase error from the high free-running linewidth of the QCLs. System limitations and alternative phase-locking configurations are …
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Diamond Schottky barrier diodes
… results exhibited by silicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since 2001, showed the potential of wide band gap semiconductors for replacing silicon (Si) in the range of medium to high voltage applications, where high frequency operation is required. With …
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A Study on the Nature of Anomalous Current Conduction in Gallium Nitride
… examined with electrical measurements on NiIAu Schottky diodes and CAFM. Current-voltage (IV) mechanisms will identify conduction mechanisms on diodes, and CAFM measurements will investigate the microstructure of conduction in GaN thin films. With CAFM, enhanced conduction has been shown to …
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A 60 Ghz Mmic 4x Subharmonic Mixer
… The mixer topology is based on an antiparallel Schottky diode pair. A discussion of the mechanisms behind the operation of this circuit and the methods of practical implementation is presented. The FGC transmission lines and passive tuning structures used in mixer implementation are …
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Modeling And Optimization Of Body Diode Reverse Recovery Characteristics Of Ldmos Transistors
… draw back with this new device is that the body diode power loss has increased significantly. There are two principal goals of this research. The first is to reduce the body diode reverse recovery characteristics of a 30V LDMOS transistor without employing an additional Schottky diode, increasing …
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Density of gap states in hydrogenated amorphous silicon
… Limited Current measurements with an Au/a-Si:H Schottky diode structure. Samples with ('(TURN)) 15.5% at. H have densities of states of 3 x 10('14) states/cm('3) eV and show large majority carrier mobility-lifetime products of 10('-5) cm('2)V('-1). An Au/a-Si:H diode which is nearly ideal (diode …
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Terahertz Detectors and Imaging Array with In-Pixel Low-Noise Amplification and Filtering in CMOS technologies
… of antenna-coupled field effect transistor and schottky barrier diode in standard 180 nm CMOS process as examples of direct detectors. During laboratory characterization, detection of terahertz radiation from schottky diode could not be achieved due to matching issues. Moreover, optimization of …
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Antenna-coupled Infrared And Millimeter-wave Detectors: Fabrication, Measurement And Optimization
… bolometer, and a patch antenna coupled to a SiC Schottky diode. Electromagnetic modeling of the antennas helped guide the design of antennas with better impedance matching to the detectors. Schottky diodes are discussed as detectors for millimeter-wave and infrared radiation, with the goal of …
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Impact of Electrical Contacting Scheme on Performance of InGaN/GaN Schottky Solar Cells
… contacting scheme employed in InGaN/GaN Schottky barrier solar cells on their performance. InGaN is a III-V compound semiconductor and has a tunable direct band-gap (0.7 eV to 3.4 eV) which spans most of the solar spectrum; this fact, along with other beneficial material properties, …
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Probing Nanoscale Functional Properties of Perovskite and Wurtzite Ferroelectrics via Scanning Probe Microscopy
… in polar wurtzite structure MZO to customize the Schottky barrier at the ferroelectric/metal interface. Asymmetric resistive switching behavior has been found in Pt/Mg0.2Zn0.8O/ITO heterostructures with modulated back-to-back Schottky diode configuration. This finding introduces an innovative …
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High-frequency multi-resonant power conversion techniques
… analysis with nonlinear-capacitance MOSFET and Schottky diode models.
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Spin-Transfer-Torque (STT) Devices for On-chip Memory and Their Applications to Low-standby Power Systems
… uses only one access transistor along with a Schottky diode in order to mitigate the area-overhead caused by two access transistors in conventional SOT-MRAM. Finally, a new design technique of SOT-MRAM is presented to improve the integration density by utilizing a shared bit-line structure.
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Investigation of Surface States and Device Surface Charging in Nitride Materials Using Scanning Kelvin Probe Microscopy
… after turning off a reverse bias to the Schottky contact of a GaN Schottky diode as well as an AlGaN/GaN Hetero-junction Field Effect Transistor (HFET) show an increase of band bending near the Schottky contact edge. For an applied reverse bias of 4 V, about 0.5 eV increase of band …
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Gate-geometry Dependence of Enhancement-mode p-GaN Gate High Electron Mobility Transistors
… AlGaN/GaN heterostructure that is contacted by a Schottky metal. In this manner, the gate stack under positive gate bias features a back-to-back diode configuration with the reverse biased gate-metal/p-GaN Schottky diode in series with the forward biased p-GaN/AlGaN/GaN p-i-n barrier diode. An …
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A Two-mode Buck Converter toward High Efficiency for the Entire Load Range for Low Power Applications
… for light load, and the bottom switch uses Schottky diode in lieu of a MOSFET to simplify the COT V2 controller. Fourth, the proposed converter combines the heavy-load and baby-buck mode converter into a single converter with a shared inductor, capacitors, and the feedback controller to save …
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