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Showing 1 to 6 of 6 for “"Schottky Barrier Diode"”.
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Electrical properties of metal/wse2structures
… on the electrical properties of metal/WSe2 Schottky barrier diodes with various metals such as Au, In, Al, and Ga in the temperature range of 80K to 400K well within the domain of thermionic emission theory. Topics covered here include the factors that determine the Schottky barrier height, …
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The Development of Novel Interconnection Technologies for 3D Packaging of Wire Bondless Silicon Carbide Power Modules
… a compact system integration. The technological barriers to realizing these concepts were identified, and solutions for novel interconnection schemes were proposed and evaluated. A novel sintered silver preform was developed to facilitate flip-chip interconnections for a bare-die power device …
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Sintering of Micro-scale and Nanscale Silver Paste for Power Semiconductor Devices Attachment
… applied to attach the bare Silicon carbide (SiC) schottky barrier diode (SBD) for high temperature application. Limited burn-out path for organics in the silver layer challenges the sintering die-attach. This difficulty was lessened by reducing organics ratio in the silver paste. The effects of …
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Epitaxial Gallium Oxide Heterojunctions for Vertical Power Rectifiers
… for high voltage devices such as the PN diode, junction barrier Schottky (JBS) diode, merged-PiN-Schottky (MPS) diode, and Schottky barrier diode (SBD). However, Ga2O3 exhibits a lack of p-type conductive that arises from an absence of dispersion within the valence band maximum. This has …
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Terahertz Detectors and Imaging Array with In-Pixel Low-Noise Amplification and Filtering in CMOS technologies
… of antenna-coupled field effect transistor and schottky barrier diode in standard 180 nm CMOS process as examples of direct detectors. During laboratory characterization, detection of terahertz radiation from schottky diode could not be achieved due to matching issues. Moreover, optimization of …
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Power Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications
… BN/β-Ga2O3 metal-insulator-semiconductor Schottky barrier diodes (MIS SBDs). The BN layer is directly grown on the β-Ga2O3 by pulsed laser deposition (PLD). The presence of a ~2.8 nm BN layer is confirmed by a series of techniques, including X-ray photoelectron spectroscopy (XPS), Raman …