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Showing 1 to 20 of 96 for “"Schottky Barrier"”.
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Diamond Schottky barrier diodes
… results exhibited by silicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since 2001, showed the potential of wide band gap semiconductors for replacing silicon (Si) in the range of medium to high voltage applications, where high frequency operation is required. With …
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GaInN/GaN Schottky Barrier Solar Cells
… has been demonstrated thus far. Nonetheless, a Schottky barrier design (to bypass the p-type doping issue) on single-crystal GaInN can be used to provide some insight into the future of amorphous and micro-crystalline GaInN Schottky barrier solar cells. Through demonstration of a functional …
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Design, Fabrication, and Packaging of Gallium Oxide Schottky Barrier Diodes
… fabrication, and packaging of vertical Ga2O3 Schottky barrier diodes (SBDs). The power SBD allows for a small forward voltage and a fast switching speed; thus, it is ubiquitously utilized in power electronics systems. It is also a building block for many advanced power transistors. Hence, the …
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Characterization of Schottky barrier carbon nanotube transistors and their applications to digital circuit design
The difficulty in shrinking silicon transistors past a certain feature size has been acknowledged for years. Carbon nanotubes (CNTs) offer a technology with an exciting solution to the scaling issues of transistors and interconnects and with the possibility of coexistence in the present silicon …
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Exploratory Investigation of Erbium Silicide NMOS as a Candidate for a Schottky Barrier CMOS Process
Long channel transistors using both platinum and erbium silicide are fabricated and their performance compared. Processing issues, including erbium's reactivity with oxide and tendency to creep, and how they affect the NMOS performance, are discussed.
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The Effect of Pressure on The Height of The Schottky Barrier for Several Semiconductors (Diodes, Metal-Contacts)
… effect of pressure (to (TURN)10 kilobars) on the schottky barrier height at the metal-semiconductor interface. Results are presented for CdS, CdSe, and ZnO together with measurements of the absorption edges for CdSe and ZnO. These results are used in conjunction with previously published flatband …
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Power Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications
… BN/β-Ga2O3 metal-insulator-semiconductor Schottky barrier diodes (MIS SBDs). The BN layer is directly grown on the β-Ga2O3 by pulsed laser deposition (PLD). The presence of a ~2.8 nm BN layer is confirmed by a series of techniques, including X-ray photoelectron spectroscopy (XPS), Raman …
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Electrical properties of metal/wse2structures
… on the electrical properties of metal/WSe2 Schottky barrier diodes with various metals such as Au, In, Al, and Ga in the temperature range of 80K to 400K well within the domain of thermionic emission theory. Topics covered here include the factors that determine the Schottky barrier height, …
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Impact of Electrical Contacting Scheme on Performance of InGaN/GaN Schottky Solar Cells
… contacting scheme employed in InGaN/GaN Schottky barrier solar cells on their performance. InGaN is a III-V compound semiconductor and has a tunable direct band-gap (0.7 eV to 3.4 eV) which spans most of the solar spectrum; this fact, along with other beneficial material properties, …
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Photoemission studies of interface effects on thin film properties
… of its quantum well states. Specifically, the Schottky barrier heights and thermal stability temperatures for Pb(111) films grown on metal-reconstructed Si(111) substrates are shown to be determined by the interfacial conditions produced by the various Si-terminating metals (Au, Ag, In, and …
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Planar Tunneling Spectroscopy of Thin-Film Niobium, Niobium/normal Metal and Niobium/semicondutor Structures
… study was performed on Nb-InGaAs bilayers. The Schottky barrier formed at the interface between these two materials was utilized as a tunneling barrier. A method was developed to fabricate small area junctions. The tunneling conductance as a function of semiconductor properties and sample …
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Electronic properties and microstructure of nanoparticulate silicon systems for diode applications
… the design, fabrication, and characterization of Schottky barrier diodes using silicon nanoparticulate composites. Within this work it could be shown, that silicon nanoparticles produced by high energy milling can be used to replace the pigment in water-based graphic inks, which on curing have …
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Graphene as transparent electrodes for solar cells
… importance of the interface in graphene/silicon Schottky barrier solar cells and apply our understanding to achieve record efficiency in these devices. We also explore graphene/SrTiO₃ Schottky junctions, where the graphene itself is responsible for absorbing visible light and show that these …
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The Bulk and Interfacial Electronic and Chemical Structure of Amorphous Hydrogenated Boron Carbide
… a detailed examination of the formation of Schottky barriers was implemented. Throughout this dissertation the chemical structure was studied. One study was to understand various growth conditions. The effects of the PECVD growth parameters were evaluated by comparing changes in atomic …
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An Analysis of Traveling - Wave Mixer Structures (Signal Processing)
… delay line transfer functions and for Schottky barrier diodes. These are combined to form models of real time convolver devices. These functions are implemented utilizing acoustic charge transport technology, an approach which permits broad band delay lines, nonlinear elements, and …
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Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications
In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky barrier fabrication. This low energy …
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Investigation of the tunneling emitter bipolar transistor as spin-injector into silicon
… overcomes the conductivity mismatch and Schottky barrier formation. In this work, the various aspects of the transistor are analyzed. The transfer of spin-polarization across the base-collector junction is simulated. The oxide MgO is considered as a tunnel barrier for the transistor. …
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GRAPHENE BASED DUAL FUNCTIONAL, SELF-POWERED PHOTODETECTOR FOR DAILY UV SENSING
… the doping level of graphene, creating a higher Schottky barrier and enhancing the responsivity of fabricated photodetector.
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Analysis of physical mechanisms for the detection of DNA in carbon nanotube field effect transistors for bio-sensing applications
… Previous works have established that either Schottky--barrier modulation or electro--static gating are the most significant mechanisms, depending on the particular device. By analyzing field effect mobilities it can be seen that the band-gap modulation effect shows up in every device and can …
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Study of surface modifications for improved selected metal (II-VI) semiconductor based devices.
… devices. There are many competing theories of Schottky barrier formation but as yet no quantitative predictive model exists to adequately explain metal-semiconductor interfaces. The II-VI compound semiconductors CdTe, CdS and ZnSe have recently come to the fore with the advent of high …
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