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Showing 1 to 20 of 237 for “"Schottky"”.
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Diamond Schottky barrier diodes
… results exhibited by silicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since 2001, showed the potential of wide band gap semiconductors for replacing silicon (Si) in the range of medium to high voltage applications, where high frequency operation is required. With …
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Classical and non-classical Schottky groups
… looks at two disparate problems relating to Schottky groups, and in particular what it means for a Schottky group to be classical or non- classical. The first problem focusses ofl the uniformization of R.iemann surfaces using Schottky groups. We extend the retrosection theorem of Koebe by …
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GaInN/GaN Schottky Barrier Solar Cells
… has been demonstrated thus far. Nonetheless, a Schottky barrier design (to bypass the p-type doping issue) on single-crystal GaInN can be used to provide some insight into the future of amorphous and micro-crystalline GaInN Schottky barrier solar cells. Through demonstration of a functional …
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Metal-aluminium gallium nitride Schottky contacts formation.
… followed by 600°C annealing, yield a Schottky barrier height of 0.82 eV with ideality factor n = 1.21.XPS and I-V results on Ag/Al[x]Ga[1]-[x]N and Ni/Al[x]Ga[1]-[x]N are compared and discussed in terms of current models of Schottky barrier formation.
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Synthesis and characterization of TiO2 nanotube Schottky diodes
… rectifying metal-semiconductor interface, or Schottky junction, throughout an ordered array of semiconducting nanotubes. The atomic layer deposition (ALD) technique offers a precise, conformal growth mechanism and was used to deposit a continuous platinum (Pt) Schottky contact throughout the …
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InAlAs/InGaAs/InP HEMTs with pseudomorphic Schottky barriers
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
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A Sub-0.1-Micron PtSi Schottky Source/drain MOSFET
The devices are fabricated with lightly doped silicon substrates, 19-A to 34-A gate oxide, $\sim$0.05-$\mu$um gate lithography, 100-A sidewall oxides, self-aligned PtSi, and no intentional doping. The thin gate and sidewall oxides enable high field emission currents at low voltages. These devices …
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Electrical Characterization of Ruthenium Dioxide Schottky Contacts on GaN
… characterization of ruthenium dioxide (RuO₂) Schottky contacts to gallium nitride (GaN) formed by evaporating ruthenium with a subsequent open-air annealing is presented. The results gathered from the current-voltage-temperature and the capacitance-voltage relationships were compared to …
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Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications
In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky barrier fabrication. This low energy …
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A Schottky-to-Ohmic Transition in Epitaxial Ferroelectric Hafnia Devices
… reversibly switched between a purely capacitive (Schottky) and resistive (Ohmic) state, a Schottky-to-Ohmic transition (SOT). A series of voltage pulse trains were used to explore the intermediate resistance states of the system. Both analog and integration behaviour was demonstrated, depending on …
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Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes
… current- voltage (IV) behavior of GaN-based Schottky diodes is discussed first. Here, a new model is developed to explain better the temperature dependent performance typically associated with a multi-Gaussian distribution of barrier heights at the metal-semiconductor interface [Section 3.1]. …
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Design, Fabrication, and Packaging of Gallium Oxide Schottky Barrier Diodes
… fabrication, and packaging of vertical Ga2O3 Schottky barrier diodes (SBDs). The power SBD allows for a small forward voltage and a fast switching speed; thus, it is ubiquitously utilized in power electronics systems. It is also a building block for many advanced power transistors. Hence, the …
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GaN-on-Silicon HEMTs and Schottky diodes for high voltage applications
… High Electron Mobility Transistors (HEMTs) and Schottky barrier diodes with superior performance, even when compared to devices based on state-of-the-art technologies such as Silicon Carbide or superjunctions. Furthermore, epitaxial growth of GaN layers on silicon wafers allows a significant …
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The use of nanowires for the production of a power Schottky diode
… has been aimed at producing such a device, a Schottky diode, which has been constructed in such a manner that it will be more energy efficient than a similar device made the traditional way, using the principle of surface area to volume ratio. The Schottky diode has a characteristic that the …
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Design and fabrication of field-effect III-V Schottky junction solar cells
… using III-V materials has been shown and proved. Schottky solar cells based on metal-(insulator)-semiconductor (M-I-S) structure have been designed and fabricated using various wide bandgap semiconductors, such as GaAs and Al<sub>0.3</sub>Ga<sub>0.7</sub>As. A secondary bias layer has been …
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Impact of Electrical Contacting Scheme on Performance of InGaN/GaN Schottky Solar Cells
… contacting scheme employed in InGaN/GaN Schottky barrier solar cells on their performance. InGaN is a III-V compound semiconductor and has a tunable direct band-gap (0.7 eV to 3.4 eV) which spans most of the solar spectrum; this fact, along with other beneficial material properties, …
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The development of a SPICE2 model for transient simulation of the Schottky Transistor
In order to simulate the Schottky Transistor and its effect on circuit applications, a computer model has been developed for the device. The focus of this research is the development of such a model for SPICE2 (a circuit simulation computer program) using a new method for model construction. This …
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