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Showing 1 to 1 of 1 for “"Scattering rate convergence"”.

  1. Analysis of Zincblende-Phase GaN, Cubic-Phase SiC, and GaAs MESFETs Including a Full-Band Monte Carlo Simulator

    … was designed from the ground up to include accurate, numerical band structures derived from an empirical pseudo-potential model. Improvements that have been made to the simulator include the generalized device structure simulation, the fully numerical final state selector, and the inclusion of …

    gatech Repository record for Analysis of Zincblende-Phase GaN, Cubic-Phase SiC, and GaAs MESFETs Including a Full-Band Monte Carlo Simulator (opens in a new tab)