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Showing 1 to 7 of 7 for “"Scanning capacitance microscopy"”.
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Quantitative capacitance measurements using a scanning probe microscope
… method by which an atomic force microscope with scanning capacitance microscopy (SCM) capability can be employed in a nontraditional fashion to quantitatively measure the capacitance of metal-oxide-semiconductor (MOS) structures. The capability to deduce sample capacitances is based on resonant …
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Electrostatic simulations of interactions between a scanning probe and quantum Hall liquid
… setup geometries were similar to those met in scanning capacitance microscopy experiments carried out by Ashoori's group [1]. The main interest was to explore the 2DEG charge densities for a different system geometries, magnetic field applied, and tip voltages. We modelled quantum bubble …
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Development of Multi-Microscopy Techniques for the Characterisation of Nitride Semiconductors
… on the same nanoscale feature between different microscopy techniques can allow a deeper understanding of the interplay between the structural, optical and electronic properties and is termed ‘multi-microscopy’. In this work, after reviewing the basic material properties and the characterisation …
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Nanoscale electrical characterisation of nitride structures
… impact to device performances. Electrical scanning probe microscopy techniques, including scanning capacitance microscopy (SCM), conductive atomic force microscopy (C-AFM) and kelvin probe force microscopy (KPFM), were utilized to study the structures of nitride devices such as high …
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Structure-Property Relationships in Nitride Electronic Devices
… into their structure-property relationships. Scanning capacitance microscopy (SCM) is an AFM-based technique that provides access to information about the electrical properties of semiconductors. This thesis describes the development of a series of SCM-based techniques for plan-view and …
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Dopant Incorporation in InAs/GaAs Quantum Dot Infrared Photodetectors
… fabrication procedures. Dark current and capacitance measurements were performed under different temperature to reveal electronic properties of the materials and devices. A novel scanning capacitance microscopy (SCM) technique was used to study the band structure and carrier concentration …
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Advanced characterization of 4H-SiC MOSFET channel [Caratterizzazione avanzata del canale 4H-SiC MOSFET]
Lo sviluppo di MOSFET di potenza ad alte prestazioni in carburo di silicio (SiC) rappresenta un passo fondamentale per l'avanzamento della moderna elettronica di potenza. Grazie all'ampio bandgap, all'elevata conducibilità termica e all'alto campo elettrico, il 4H-SiC è emerso come materiale …