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Showing 1 to 20 of 174 for “"Scanning Tunneling Microscopy"”.
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Optically-Assisted Scanning Tunneling Microscopy
Scanning tunneling microscopy (STM) consistently provides the highest spatial resolution among the scanning probe methods, allowing surfaces to be investigated on the atomic level. With the addition of optical excitation, STM promises to become a powerful technique for single molecule spectroscopy, …
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Scanning Tunneling Microscopy with Electrochemical Capabilities
No abstract prepared.
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Manipulative Scanning Tunneling Microscopy and Molecular Spintronics
… and applications in recent scientific studies. Scanning probe microscopy has emerged as a versatile tool for studying nanoscale interactions due to its capabilities of local measurement of spectroscopic, magneto-electric, and topographic properties in real-space with sub-nanometer resolution. …
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Scanning tunneling microscopy of III-V semiconductors
Scanning tunneling microscopy (STM) has been used to study the (100) surface of GaAs and the (110) plane of cross-sectioned GaAs/AlGaAs heterolayers. Observation of the GaAs(100) surface with STM has characterized the c(8x2) reconstruction and shows that the c(8x2) consists of ordered (4x2) …
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Scanning Tunneling Microscopy of the Cuprate Superconductor BSCCO
Submitted by Meng Tao (mengtao2@illinois.edu) on 2012-10-25T19:16:41Z No. of bitstreams: 1 Misra_Shashank.pdf: 6764572 bytes, checksum: 29d6fbdaec0a747259a1662befe29a65 (MD5)
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Scanning tunneling microscopy: application to stepped surfaces and magnetite
Contains fulltext : mmubn000001_161992064.pdf (Publisher’s version ) (Open Access)
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Characterization of graphene-substrate interactions using scanning tunneling microscopy
… this dissertation. We use the ultra-high vacuum scanning tunneling microscope to study the interface between monolayer graphene flakes and various technologically relevant semiconducting substrates (GaAs, InAs, Si) at room temperature. We observe an electronic semi-transparency effect where the …
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Scanning tunneling microscopy of silicon(100) 2 x 1
… beam epitaxy (MBE), has been studied with the scanning tunneling microscope (STM) to attempt to clear up the controversy that surrounds previous studies of this surface. To this end, an ultra-high vacuum (UHV) STM/surface science system has been designed and constructed to study semiconductor …
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Scanning tunneling microscopy investigation of atomically precise graphene nanoribbons
… precursors into polyanthrylene. Detailed scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements provided high-resolution imaging and reveal a 2.76 eV bandgap for chevron graphene nanoribbons. It was also discovered that tunneling to the substrate …
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Scanning Tunneling Microscopy and Spectroscopy Measurements of Superconductor/Ferromagnet Hybrids
… hybrid structures using low-temperature scanning tunneling microscopy and spectroscopy (LT-STM/STS) under ultra-high vacuum conditions. There are a number of novel effects that can occur due to the non-homogenous magnetic field from the ferromagnet, which directly influence the global and …
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Silicon/silicon Oxide Interface Roughness Studied by Scanning Tunneling Microscopy
… time, we demonstrate that ultra-high vacuum scanning tunneling microscopy (UHV-STM) can be used to tunnel through 1-nm-thick industry-standard oxide to directly examine the Si/SiO2 interface and extract interface roughness parameters from the STM topography. Our results show that the …
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Photoemission and scanning tunneling microscopy investigation of elemental-semiconductor surfaces
… by studying the resulting surface structures by scanning tunneling microscopy (STM), a quantitative description of the interaction and reaction between adsorbate and surface can be obtained. The photoemission method allows a distinction between atoms in different layers and in inequivalent sites …
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Photoemission and scanning tunneling microscopy investigation of elemental-semiconductor surfaces
… by studying the resulting surface structures by scanning tunneling microscopy (STM), a quantitative description of the interaction and reaction between adsorbate and surface can be obtained. The photoemission method allows a distinction between atoms in different layers and in inequivalent sites …
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Scanning tunneling microscopy and spectroscopy of graphene on semiconducting surfaces
… with the supporting substrate, we have utilized scanning tunneling microscopy (STM) and spectroscopy (STS) to probe the graphene-substrate interaction for graphene on several different semiconducting substrates in ultrahigh vacuum (UHV). The Si(100) – 2×1:H, GaAs(110), InAs(110), and Si(111) – …
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A Single-Stage Passive Vibration Isolation System for Scanning Tunneling Microscopy
<p>Scanning Tunneling Microscopy (STM) uses quantum tunneling effect to study the surfaces of materials on an atomic scale. Since the probe of the microscope is on the order of nanometers away from the surface, the device is prone to noises due to vibrations from the surroundings. To minimize the …
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Multi-Dimensional Dopant Profiling With Atomic Resolution by Scanning Tunneling Microscopy
… images, dI/dV images and current image tunneling spectroscopy (CITS) were acquired across the lateral PN junctions of Si devices. Two-dimensional dopant (carrier) profiles were extracted from CITS data with 5A resolution. Moreover, the N and P type dopant induced features were observed …
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Cross-Sectional Scanning Tunneling Microscopy Investigations of Cleaved Iii-V Heterostructures
… structures has been satisfied by cross-sectional scanning tunneling microscopy (XSTM). This thesis details the development and application of XSTM to III-V heterostructures. An ultra-high vacuum (UHV) system dedicated to XSTM has been specifically designed and constructed as part of this work. …
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Electronic Structure Of Carbon Nanotube Systems Measured With Scanning Tunneling Microscopy
Submitted by Meng Tao (mengtao2@illinois.edu) on 2012-10-19T19:02:26Z No. of bitstreams: 1 Hornbaker.pdf: 10427392 bytes, checksum: 29417c25d3f3e0e10c1f4867be4a9924 (MD5)
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Scanning tunneling microscopy of quasi-one-dimensional charge-density wave materials
Restriction data tranferred 2014-07-01T11:19:18-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission
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