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Showing 1 to 20 of 76 for “"SURFACE PASSIVATION"”.
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Porous silicon surface passivation and optical properties
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1996.
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Solar Cells with Passivating Contacts − Investigation of Their Temperature- and Illumination-Dependent Performance and Surface Passivation
… the cell performance due to the extremely high surface recombination velocity. Up to now, the characterisation of the performance of solar cells with passivating contacts has been typically conducted at standard testing conditions. However, it does not reflect the cell performance at actual …
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Surface Passivation of Colloidal II-IV Semiconductor Quantum Belts and Quantum Wires: Synthesis, Mechanism and Optical Studies
… mechanism of CdSe quantum belts: QBs) and the surface passivation of CdTe quantum wires: QWs). Investigation of QB morphology and QW passivation are fundamentally important to avoid nonradiative recombination and to increase electron-transport efficiency in semiconductor solar-cell devices. The …
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Area selective atomic layer deposition of silicon dioxide on silicon dioxide using surface passivation of copper non-growth surface
… is required to functionalize the non-growth surface prior to ALD process. This bottom-up surface selective variant of ALD is area selective ALD and can be widely used in structures during device processing. In this thesis work, we have completed the development of area selective atomic layer …
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High mobility germanium MOSFETs : study of ozone surface passivation and n-type Dopant channel implants combined with ALD dielectrics
… MOSFETs. First, the formation of an interfacial passivation layer via in-situ ozone oxidation is explored. Long channel Ge p- and n-MOSFETs are fabricated with A12 0 3 and HfO2 gate dielectrics deposited by atomic layer deposition (ALD). The ozone surface passivation is observed to result in …
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The Impact of Atomic Hydrogen on the Properties of the Silicon/Silicon Dioxide Interface
… thesis, the influence of atomic hydrogen on the surface passivation of Si and SiO2 interface was mainly investigated. The effect of corona charging, humidity, UV exposure and mineral acid on Si and SiO2 interface was compared to the effect of atomic hydrogen. The electrical properties of thin, …
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The Impact of Atomic Hydrogen on the Properties of the Silicon/Silicon Dioxide Interface
… thesis, the influence of atomic hydrogen on the surface passivation of Si and SiO2 interface was mainly investigated. The effect of corona charging, humidity, UV exposure and mineral acid on Si and SiO2 interface was compared to the effect of atomic hydrogen. The electrical properties of thin, …
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The Surface Modification of Single Crystal Semiconductors via Solubility Equilibria
The surface modification of semiconductors is an area of considerable interest because of their potential use in solar energy cells. Stabilization of the semiconductor against dissolution, corrosion, and surface passivation in ionic solutions is of particular importance in the development of …
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Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
… every single process step is important, the surface passivation plays an especially essential role in the device performance. Without a passivation layer, surface-related dispersion effects cannot be minimized or even eliminated. Therefore, one focus of this thesis was the development of such …
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Solving Series Resistance Problems In GaSb Thermophotovoltaics with Graphene and Other Approaches
… series resistances issues as well as act as a surface passivation layer. The graphene was able to reduce series resistance by as much as 50% on some of the devices, with a corresponding 6 mA/cm2 increase in short circuit current exhibited. The photocurrent and diode current values were not …
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Electrical properties of silicon surfaces and interfaces
… with diminishing device size. First, alternative surface passivation chemistries are investigated to meet the narrowing process tolerances for high quality silicon surfaces. Second, Si-based light emitting devices are studied to address a longer-term move towards photons instead of electrons for …
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Development of InAlN HEMTs for space application
… properties), particularly with respect to surface passivation. Following analysis of performance and reliability data, the InAlN HEMT device fabrication process was optimised by adjusting the metal Ohmic contact formation process (specifically metal stack thicknesses and anneal conditions) …
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Photophysics of cadmium selenide quantum dot solids
… with a rate that depends on both the size and surface passivation of the quantum dots. The charge generation efficiency decreases with increasing temperature as non-radiative and radiative recombination pathways increasingly compete with charge separation. A simple tunneling model for the …
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Fabrication and characterisation of AlGaN/GaN high electron mobolity transistors for power applications
… processes containing MOSHFET processing, surface passivation, air bridge technology, and field plate processing. HEMTs on undoped and doped layer structures were manufactured.Improved properties of intentionally doped structures in comparison to undoped ones were observed using Hall effect …
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Cd3P2 Quantum Dots As Sources for Quantum Emission and Detection of Near-IR Radiation
… We have also investigated the effect of surface passivation techniques using CdSe and Zn3P2 on the spectroscopic properties of Cd3P2 CQDs. Our results demonstrate that surface passivation techniques are capable of accelerating radiative lifetimes in Cd3P2 CQDs while maintaining PL QYs and …
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Assembly and functionalization of phage onto substrates patterned by dip-pen nanolithography
… is deposited to form patterned lines. After surface passivation and activation chemistry, phage are deposited and adhere to the patterned substrate. Images from atomic force microscopy support that phage are covalently coupled to MHA lines and that cobalt precipitates on patterned phage.
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Passivation of GaAs surfaces and fabrication of self-assembled In(Ga)As/GaAs quantum ring structures
This work concentrates on two topics: (i) GaAs surface passivation methods using different materials and (ii) formation of InAs islands on GaAs and transformation of InAs islands into quantum rings (QRs). All the samples are fabricated by metalorganic vapor phase epitaxy and characterized by …
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FUNCTIONAL THIN FILMS BY SPATIAL ATOMIC LAYER DEPOSITION FOR PHOTOVOLTAIC APPLICATIONS
… and development of aluminium oxide films for surface passivation in silicon wafer solar cells and zinc oxide (undoped and doped) films for application as transparent conductive oxides in thin film solar cells and heterojunction silicon solar cells is investigated using this …
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Herstellung und Untersuchung von beidseitig passivierten kristallinen Siliziumsolarzellen
… potential of silicon nitride (a-SixNy:Hz) for surface passivation was investigated by measuring the minority carrier lifetime. Especially the layer composition was observed and in detail characterized by Fourier transformed infrared spectroscopy (FTIR). The investigated silicon nitride layers …
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A study of InAs based quantum structures for use in optoelectronic devices
… well known that NW structures suffer from severe surface states which degrade the resulting devices performance, due to the large surface to volume ratio. To overcome this problem, in this thesis, we developed several advanced NW-based quantum materials with a core-shell structure …
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