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Showing 1 to 11 of 11 for “"SPICE model"”.

  1. Simulation of SiC MOSFET Power Converters

    … carbide MOSFET enhancement to the circuit. The modeling for silicon and silicon carbide MOSFET was created using the spice model provided from leading electronics companies as ROHM, CREE and INFINION. This spice model is provided by these companies to examine the effect of these components. This …

    denver Repository record for Simulation of SiC MOSFET Power Converters (opens in a new tab)

  2. Modeling of gallium nitride transistors for high power and high temperature applications

    … of GaN-based power transistors, proper device modeling is essential to verify its operation and improve the design efficiency. In this view, this research work presents modeling and characterization of GaN transistors for high power and high temperature applications. The objective of this …

    missouri Repository record for Modeling of gallium nitride transistors for high power and high temperature applications (opens in a new tab)

  3. Efficient simulation of Large-Scale Superconducting Nanowire Circuits

    … becomes more significant, the complexity of models required to accurately and efficiently simulate the device’s behavior becomes more challenging. Traditional circuit simulators used for superconducting devices tend to focus on frequency-domain simulation and are not optimized for simulating …

    mit Repository record for Efficient simulation of Large-Scale Superconducting Nanowire Circuits (opens in a new tab)

  4. Design & optimization of automotive power electronics utilizing FITMOS MOSFET technology

    … characteristics of FITMOS devices, developed the SPICE model for simulation and explored their applications in the design of automotive power electronics. Specifically, we identified how to best utilize the FITMOS characteristics to benefit power circuit design and on quantifying the gains that …

    mit Repository record for Design & optimization of automotive power electronics utilizing FITMOS MOSFET technology (opens in a new tab)

  5. Packaging and Magnetic Integration for Reliable Switching of Paralleled SiC MOSFETs

    … are the goals of this work. Development of a SPICE model free of non-convergence – A simulation model for a SiC power module is necessary for evaluations of cross-turn-on and current unbalance; however, most SiC power modules do not have models. No existing modeling methods discuss how to …

    vt Repository record for Packaging and Magnetic Integration for Reliable Switching of Paralleled SiC MOSFETs (opens in a new tab)

  6. Device and circuit-level models for carbon nanotube and graphene nanoribbon transistors

    … program with integrated circuit emphasis (SPICE) model for CNTFET and GNRFET in digital logic applications is presented. The device performance of these circuit models and their design layout are then compared to 45 nm and 90 nm MOSFET for benchmarking. It is revealed through the …

    cambridge Repository record for Device and circuit-level models for carbon nanotube and graphene nanoribbon transistors (opens in a new tab)

  7. Expanding software process improvement models beyond the software process itself

    … more popular software process improvement (SPI) models used by the software industry to help them in this endeavour are the Capability Maturity Model for Software (SW-CMM) from the Software Engineering Institute and the Software Process Improvement and Capability determination (SPICE) model from …

    cape-town Repository record for Expanding software process improvement models beyond the software process itself (opens in a new tab)

  8. Modeling and simulation of nano-scale transistor

    Modeling and simulation of nano-scale transistor plays an important role in designing circuits. They serve as the medium of exchanging information between foundries and circuit designers. In the past several decades, the innovations of transistor technology such as FDSOI and FinFET have been the …

    udel Repository record for Modeling and simulation of nano-scale transistor (opens in a new tab)

  9. Load-Independent Class-E Power Conversion

    … Load-independency illucidation by a Thevenin Model – A Thevenin model is then established (although Class-E is a nonliear circuit) to explain the load-independency with fixed switching frequency and duty cycle. The input block of a Class-E inverter (Vin, Lin, Cin, and S) behaves as a fixed …

    vt Repository record for Load-Independent Class-E Power Conversion (opens in a new tab)