Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 7384 for “"SI"”.
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The superconductor/semiconductor interface of V₃Si and Si
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
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Individualizuotos ugdymo(si) programos svarba ikimokyklinio amžiaus vaikų ugdymui(si) /
… modern, oriented to constant alternation, inclusive any education methods and forms, to consider qualities of children at the maximum. The varied view to childhood and to child quickened the reconstruction of inevitable education content. The most important step was made when the law of …
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Influence of SiNx/Si interface states on Si solar cells
Impact of the SiN_x/n^+-Si interface on silicon solar cell performance was investigated, where SiN_x is used as a passivation layer. Significant shifts in capacitance, conductance and leakage current characteristics were observed for metal/SiN:H/n^+-Si MOS capacitor when it was subjected to a …
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Ikimokyklinių įstaigų pedagogų mokymo(si) organizacijoje patirčių reikšmingumas ugdymo(si) kokybei /
… as a workplace and to determine their significance for quality of (self-)education. Preschool teachers’ teaching and learning experiences in everyday professional activities, highlighting types and ways (forms, methods) of teaching and learning, are theoretically grounded. It is …
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SPECIALIŲJŲ UGDYMO(SI) POREIKIŲ VAIKŲ INDIVIDUALAUS LIETUVIŲ KALBOS MOKYMO(SI) VALDYMAS /
Relevance of the thesis: teaching children with special needs is urgent because the tendency of increasing numbers of such children is observed. Educational research is aimed at improving training children with special needs. Object of the thesis: managing individual Lithuanian language …
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Development of poly-Si/SiOx passivating contacts for advanced Si photovoltaics
… temperatures from humanity's greenhouse gas emissions makes it apparent that any future energy sources must be clean and renewable. Of the commonly known renewable energy sources: solar, wind, geothermal, and hydroelectric, the Sun provides by far the largest amount of power to the Earth daily at …
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Development of Ti-Si-N and Ta-Si-N as diffusion barriers
"Sputter deposited Ti-Si-N and Ta-Si-N films with different compositions were fabricated using Ti, Si, TiSi₂, and Ta targets in Ar/N₂ plasmas with a variety of deposition parameters. A fractional factorial design (FFD) method was used to identify the significant deposition variables for the Ti-Si-N …
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Resonant tunneling and its prospects in Si/ZnS and Si/CaF₂ heterostructures
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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Si(gh)te constructs
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Architecture, 1998.
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Control of morphology Al-Fe-Si phase in Al-Si-Cu hypoeutectic alloy
<p>Aluminum-Silicon (Al-Si) alloys are one of the most versatile aluminum alloys. Iron is considered one of the most harmful elements in Al-Si diecasting alloy because its presence leads to the precipitation of many AlFeSi intermetallic phases and unacceptable mechanical properties, such as …
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Commercialization potential of compositionally graded Ge - Si₁₋x̳Gex̳ - Si substrates for solar applications
This project considers the potential of Ge - Si₁₋x̳Gex̳ - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge and GaAs has proven successful and dual junction solar cells have been …
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Integration of GaAsP alloys on Si for high-efficiency Ill-V/Si PV
… that leverages the large area and low cost of Silicon wafers with the high performance of Ill-V materials. Ill-V semiconductor materials have enabled a host of electronic devices from record setting solar cells, high efficiency light emitting diodes, power amplifiers and high-mobility electron …
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Micro-fabrication of 3-D Si/air and Si/SiO₂/air PBG structures
Thesis (Elec. E.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998; and, Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
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Studien zur C/Si-Bioisosterie
… der vorliegenden Arbeit wurden Beiträge zur C/Si-Bioisosterie und zur asymmetrischen Synthese neuer siliciumhaltiger alpha-Aminosäuren geleistet. Im Vordergrund der Untersuchungen stand die Entwicklung neuer präparativer Methoden zur Darstellung siliciumhaltiger Wirkstoffe und die Untersuchung …
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The Si/SiO2 Interface Roughness
The Si/Si02 interface roughness has important effects on the performance of metal-oxide semiconductor field effect transistor devices, which dominate contemporary integrated circuit technology. There have been intense efforts to study this system due to its importance. In this work, a new …
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Ge photodetectors for Si microphotonics
This thesis demonstrates the integration of pure Ge near-infrared photodetectors on Si. Ge epilayers were grown directly on Si by a two-step ultra-high-vacuum/chemical-vapor-deposition (UHV/CVD) process. This work conclusively proves that threading-dislocation densities in the Ge epilayers, …
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Nuclear resonance fluorescence in Si²⁸
… = 504 kev excited in the reaction Al²⁷(p, γ)Si²⁸ was investigated using a technique of nuclear resonance fluorescence. A silicon absorber was placed in a collimated beam of gamma rays from the reaction. The direction of collimation with reference to the direction of the bombarding protons …
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Conductive Si doped metal oxide fuel cell catalyst supports: understanding the role of Si content
… on carbon (Pt/C) which is susceptible to corrosion, thus a highly conductive and stable Ti3O5 doped by Si (TOS) conductive metal oxide catalyst support is reported. The TOS support was optimized for 20 wt% Si and surface area. The support was studied under intensive electrochemical durability …
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Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ
It is widely accepted that when transistors are scaled beyond the 10-nm technology generation in the near future, Ge, or alternatively Si1-xGex will potentially replace Si as the channel material to maintain CMOS device performance improvement. In is one of the most promising p-type dopant in Ge …
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