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Showing 1 to 7 of 7 for “"S-parameter measurements"”.
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Observing limitations of the discrete Hilbert transform with S-parameter measurements of microstrips and striplines
S-parameter measurements of microstrips and striplines were done. The physical properties of the devices under test, consisting of nine single coplanar traces and nine pairs of coupled coplanar traces, are provided. The lab setup and equipment used to make such measurements are explained along with …
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On the Analysis, Design, and Modeling of Electrostatic Discharge Protection Devices for Analog and Radio -Frequency Integrated Circuits
… off-state impedance of the device using s-parameter measurements, for inclusion in RF circuit simulations. Experimental results are provided for silicon and SiGe npn transistors.
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Enhanced modeling methodology for system-level electrostatic discharge simulation
… on the circuit board’s power delivery network. S-parameter measurements enable the development of a model for an IEC 61000-4-2 ESD source that comprehends the coupling among the ground straps and the ground plane. The transient-voltage-suppressor device is modeled using a behavioral snapback model …
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Design and Characterization of Liquid Metal Flip Chip Interconnections for Heterogeneous Microwave Assemblies
… in a liquid metal, flip chip configuration. S-parameter measurements of prototype MMIC assemblies with liquid metal, flip chip interconnections showed an average transition loss of 0.7dB over the MMIC's frequency of operation (4.9 - 8.5 GHz). Passive assemblies were also fabricated to …
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A compact transport and charge model for GaN-based high electron mobility transistors for RF applications
… charge expressions in the model require very few parameters. The parameters have straightforward physical meanings and can be extracted through independent measurements. The model is implemented in Verilog-A and is compatible with state of the art circuit simulators. The new model is calibrated …
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Systematic Optimization Technique for MESFET Modeling
… technique implies the use of three sets of S-parameter measurements at different bias conditions. The technique consists of two major steps; in the first step, some of the bias-independent extrinsic parameters are estimated in preparation for the second step. In the second step, all other …
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Flexible and stretchable tactile sensing skins using microwave transmission lines and piezoresistive rubber
… sensor deformation can be reconstructed from S-parameter measurements across frequency. The advantages of this sensor include that it requires only one electrical connection (and ground), it is rugged, simple, and inexpensive to make, the response time is ultimately limited only by the mechanics …