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Showing 1 to 20 of 28 for “"Rutherford backscattering spectrometry (RBS)"”.
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Changes in the near-surface stress in titanium caused by krypton ion-implantation
… through scanning electron microscopy (SEM). Rutherford backscattering spectrometry (RBS) was also used to determine the dose and depth of implanted krypton. The krypton profiile in titanium, and the associated damage profile, was modelled with TRIM calculations. In addition, metallurgical …
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Radiation-Induced Segregation and Precipitation in Ion-Irradiated Molybdenum-Rhenium Alloys
… was measured during irradiation by in situ Rutherford backscattering spectrometry (RBS). The results of the segregation measurements were in agreement with theoretical models based on point-defect driven transport of solute atoms toward point-defect sinks.
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Partitioning and Diffusivity of arsenic(III) in the Active Layer of Thin-Film Composite Reverse Osmosis and Nanofiltration Membranes
… was also investigated. This study introduced Rutherford backscattering spectrometry (RBS) into the membrane field. Major achievements were made from three perspectives: (1) successful characterization of membrane physico-chemical properties, including elemental composition, thickness and …
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Nanofiltration membranes modified with aromatic polyamide dendrimers active layers
… membrane structures are further characterized by Rutherford backscattering spectrometry (RBS) and atomic force microscopy (AFM) techniques, suggesting a low-level accumulation of dendrimers inside the TFC-S NF membranes and subsequent formation of an additional aramide dendrimer active layer. …
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A Novel Process for GeSi Thin Film Synthesis
… oxidation kinetics of Ge-ion implanted silicon. Rutherford backscattering spectrometry (RBS), ion channeling, Raman spectroscopy and scanning electron microscopy (SEM) were used as the characterization techniques.
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Recrystallisation Of Strontium Titanate
… reflectivity (TRR) has been combined with Rutherford backscattering spectrometry (RBS) and ion channelling to investigate this effect. Thin amorphous films were produced on single crystal substrates of (100) strontium titanate by ion bombardment. Specimens were annealed under controlled …
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Analyse struktureller Defekte in kristallinen Schichten
… sich Untersuchungen mit nuklearen Methoden wie Rutherford Backscattering Spectrometry (RBS), Nuclear Reaction Analysis (NRA) oder Channeling durchführen, um Festkörper zu analysieren. <br>In der vorliegenden Arbeit wurden Ionenstrahltechniken zur Element- und Strukturanalyse sowohl von Diamant-, …
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The application of Bayesian statistics and maximum entropy to Ion beam analysis techniques
… The results of this method of deconvoluting Rutherford Backscattering Spectrometry (RBS) and Proton Induced X-ray Emission (PIXE) spectra are compared to the results from other deconvolution techniques, namely Fourier Transforms, Jansson's method and maximum entropy (MaxEnt) without pixons. …
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Surface phase emergence and evolution of solid oxide fuel cell cathode materials
… (XRD), atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). Changes upon heating the films to operating temperature and pressures were characterized using various synchrotron x-ray techniques. Total Reflection X-ray …
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Effects of Xe ion irradiation of ZrN and the migration behaviour of implanted Eu
… were characterized by Raman spectroscopy and Rutherford backscattering spectrometry (RBS). GIXRD results con rmed the nano-crystallinity of the deposited ZrN layer. Raman spectroscopy results of the as-deposited ZrN, exhibited all rst-order Raman scattering bands indicating a ZrN structure …
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Diffusion and the thermal stability of amorphous copper-zirconium
… impurities, by means of Auger electron spectrometry (AES) and Rutherford backscattering spectrometry (RBS). Thermal measurements were made by differential scanning calorimetry (DSC) up to 550 C. The diffusion coefficients of Ag and Au in amorphous CU50zr50 are found to be somewhat higher …
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Fabrication of PtNi and PtV near-surface alloys as improved catalysts for proton exchange membrane hydrogen fuel cells
… proton induced x-ray emission (PIXE) and Rutherford backscattering spectrometry (RBS). These techniques helped verify the presence of the thin deposited coatings whilst also highlighting the presence of contaminants in the form of iron, manganese and chromium. Tafel Plot analysis was used …
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Experimental and Modeling Studies of Low-Energy Ion Sputtering for Ion Thrusters
… measurements of sputtering were made using both Rutherford backscattering spectrometry (RBS) and mass-loss methods. Sputtering was performed in a small vacuum facility using an ion gun. For the RBS technique, sputtered material was collected on aluminum foil substrates. The area density of the …
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Synthesis and characterization of tungsten oxide wo3 nanostructures thin films for gas sensing applications
… the roughness of the samples also increases. Rutherford backscattering spectrometry (RBS) was used to study the composition and thickness of the samples. RBS confirmed that the samples deposited were WO3. It was found that as the deposition temperature increases the thickness of the thin films …
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Thermodynamic stability of Vo2-Metal thin films
… behavior of VO2 thin film. UV-VIS-NIR Spectrometry was used to measure the optical behavior of the VO2 film. The structures on which a solid thin metal film of thermodynamic stability of VO2 in contact with metals was conducted on solid thin metal films of Pd, Ni, Hf, Pt, Co, and Al …
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Methods for the analysis of low-Z plasma facing surfaces in magnetic fusion applications
… (XPS), time-of-flight secondary ion mass spectrometry (TOF-SIMS), and Rutherford backscattering spectrometry (RBS). In addition, variations in surface morphology in each tile were mapped using a 3D laser scanning confocal microscope. Similar to the pure low-Z coatings used in the NSTX-U …
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Ceramic nanostructures for block copolymers
… Fourier Transform Infra-red Spectroscopy (FTIR), Rutherford Backscattering Spectrometry (RBS) and Forward recoil Spectrometry (FRES) and morphologically by AFM. Through these chemical analysis techniques, it is demonstrated that the ozone + uv and uv only oxidation processes converts thin films of …
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Phase formation sequence at metal-germanium interfaces in thin film systems.
… after heating in a vacuum furnace was done by Rutherford Backscattering Spectrometry (RBS) and X-Ray Diffraction (XRD). Ti-Ge, Pd-Ge, Zr-Ge, Fe-Ge and Cr-Ge thin film systems were investigated. First phases found in these systems were Ti6Ge5l Pd2Ge, ZrGe, FeGe. and CruGe8 respectively. …
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Correlation of the microstructure and processing conditions of ultra-thin oxygen-implanted silicon-on-insulator materials
… (SEM), Auger electron spectroscopy (AES), Rutherford backscattering spectrometry (RBS), and optical microscopy. The implantation dose has a strong effect on the microstructure in both the as-implanted and annealed samples. The dominant defects observed in the as-implanted samples were …
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Growth and characterisation of platinum and palladium catalysed silicon based nanostructures for nano-device fabrication
… time was investigated using in situ real-time Rutherford Backscattering Spectrometry (RBS). In situ real-time RBS revealed the reaction of platinum and silicon to start at about 200 °C and 230 °C, for MBE and EBE coatings respectively, forming platinum silicide phases (Pt2Si and PtSi) in …
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