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Showing 1 to 19 of 19 for “"Rutherford Backscattering Spectroscopy"”.
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A novel measurment of net erosion and plasma-material interaction in plasma thrusters
… net erosion measurements while simultaneous Rutherford Backscattering Spectroscopy (RBS) quantifies the plasma retention and contamination in the surface layers. This insight into the surface composition and PMI is one of the major advantages of this technique when compared to other …
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Trapping of hydrogen in Hf-based high κ dielectric thin films for advanced CMOS applications.
… may lead to some crystallization issues. Rutherford backscattering spectroscopy (RBS) for measuring oxygen deficiencies, elastic recoil detection analysis (ERDA) for quantifying hydrogen and nuclear reaction analysis (NRA) for quantifying carbon, X-ray diffraction (XRD) for measuring …
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X-ray photoelectron spectroscopy (XPS) study of single crystal UO2 and U3O8 on r-plane sapphire and yttrium stabilized zirconium (YSZ) substrates
… our thin films using X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Rutherford Backscattering Spectroscopy (RBS), and Secondary Ion Mass Spectroscopy (SIMS). This thesis will primarily focus on the growth of the thin films, and the analyzed results from X-ray …
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Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies.
… HfSixOy and HfSixOyNz are also presented. Rutherford backscattering spectroscopy (RBS), heavy ion RBS (HI-RBS), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HR-TEM), and time of flight and dynamic secondary ion mass spectroscopy (ToF-SIMS, …
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A new beamline for positron annihilation lifetime spectroscopy
… been studied using both the PALS beamline and Rutherford Backscattering Spectroscopy (RBS). The evolution of the ion implantation induced damage during annealing was investigated with results indicating that vacancy cluster occurs in both crystalline and amorphous states. In gallium antimonide, …
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A new beamline for positron annihilation lifetime spectroscopy
… been studied using both the PALS beamline and Rutherford Backscattering Spectroscopy (RBS). The evolution of the ion implantation induced damage during annealing was investigated with results indicating that vacancy cluster occurs in both crystalline and amorphous states. In gallium antimonide, …
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Real-time RBS analysis of plasma erosion in DIONISOS
… and an ion beam analysis technique known as Rutherford backscattering spectroscopy (RBS) to determine target thickness and composition. Copper coated aluminum targets were subjected to helium plasmas of varying fluxes and ion energies and were analyzed in real-time with RBS to determine the …
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Investigation of Pd-Ti and Ni-Ti Multilayer Thin Films for Enhanced Hydrogen Storage Capacity
… and annealed at different temperatures. Rutherford backscattering spectroscopy confirmed the formation of multilayers, consisting of pure palladium and nickel layers. The titanium layers in both systems exhibited a significant amount of oxygen contamination (up to 63 at.% in the Pd-based …
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Ion beam mixing of Mo/Al bilayer samples and thermal spike effects
… Å)/ Al(substrate) were characterized using Rutherford Backscattering Spectroscopy after first being irradiated with Xe ion beam having an energy of 1.8 MeV. The computer code RUMP was then used to simulate the RBS spectra. The interdiffusion at the interface was considered in terms of …
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Al/ti(x)w(1-X) Metal/diffusion-Barrier Systems: Interfacial Reaction Paths and Kinetics as a Function of Composition and Microstructure
… vacuum. TiW films deposited in Ar were found by Rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy to be increasingly Ti deficient with increases in the Ti sputtering rate and/or $\rm T\sb{s}$ at a constant W sputtering rate. TRIM calculations and Monte Carlo …
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Annealing effects on platinum coating morphology
… (SEM) equipped with an energy dispersive spectroscopy (EDS), Atomic force microscope (AFM), X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), and Particle induced X-ray emission (PIXE) were used to characterise the coated systems in terms of surface morphology, …
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Ion assisted magnetron sputtering of tantalum thin film deposition and characterization
… at higher ion energies, which was measured by Rutherford backscattering spectroscopy. The sputtering yield derived from these data was compared with previously published data and theoretical predictions. This ion assisted deposition process was further studied by molecular dynamic simulations …
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Metalizzazione su superfici di SiC: Contatti ohmici di Nisu 4H-SiC tramite processi laser
… dopo LA è stata analizzata combinando la Rutherford Backscattering Spectroscopy (RBS) con la diffrazione dei raggi X, la TEM trasversale, la spettroscopia a raggi X a dispersione di energia (EDX) e le misurazioni della cosiddetta "sheet resistance" (Rs). Le simulazioni numeriche, per la …
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Effect of helium, strontium and silver implanted into silicon carbide on the structural changes and migration of the implants
… and annealed samples were characterized by Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), elastic recoil detection analysis (ERDA) and Rutherford backscattering spectroscopy (RBS). In both the Ag&Sr-SiC and Ag&Sr&He-SiC samples, implantations retained some …
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Electroless Silver Deposition on (100) and (111) Silicon Wafers, Fabrication of Nanowires and Nanopillars by Assisted Etching
… 1, per tempi che vanno da 1s a 160s, con RBS (Rutherford Backscattering Spectroscopy), SEM (Scanning Electron Microscopy) e cross section TEM (Transmission Electron Microscopy). Il capitolo 2 è stato dedicato alla comprensione della dipendenza del processo di deposizione dall orientazione …
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Conjugated Polymer Brushes (Poly(3-hexylthiophene) brushes): new electro- and photo-active molecular architectures
… using ellipsometry, X-ray Photoelectron Spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and Conductive atomic force microscopy (C-AFM). The obtained data suggests that the grafting process occurs not only at the poly(4-bromostyrene), PS-Br/polymerization solution …
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Development and performance characterization of first-generation dendrimeric nanofiltration membranes
… 10% to 90%, and similar rejection for MgSO4. Rutherford back-scattering spectroscopy (RBS) analyses of G1 membranes revealed that their active layers had thickness in the range of 17-44 nm, all thinner compared to the range of 50-200 nm for commercial NF polyamide membranes.
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Multilayer solar selective coatings for high temperature solar applications: from concept to design
… the elementary compositions were determined by Rutherford Backscattering Spectroscopy (RBS), Nuclear Reaction Analysis (NRA) and Elastic Recoil Detection (ERD) ion beam techniques; the crystal structure was studied with X-ray diffraction and Raman spectrometry was used to determine the chemical …