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Showing 1 to 1 of 1 for “"Reverse Conducting Insulated Gate Bipolar Transistor (RC-IGBT)"”.
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High Efficiency IGBTs through Novel Three-Dimensional Modelling and New Architectures
New Insulated Gate Bipolar Transistor (IGBT) designs are reliant on simulation tools, such as Sentaurus technology computer-aided design (TCAD) models, which allow for rapid device development that could not be achieved by manufacturing prototypes due to the cost and time associated with …