Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 26 for “"Resonant tunneling"”.
-
A resonant tunneling diode based monostable multivibrator
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
-
Uniaxial Strain Effect on Graphene-Nanoribbon Resonant Tunneling Transistors
… and chemical stability. The graphene/hBN based tunneling transistors show the resonant tunneling and strong negative differential resistance (NDR). These devices which have potential for future high-frequency and logic applications such as high-speed IC circuits, signal generators, data storage, …
-
Design of resonant-tunneling diodes for a GaAs integrated SRAM
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
-
AC behavior of resonant-tunneling diodes in the scattering-dominated regime
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
-
Process development for a silicon planar resonant-tunneling field-effect transistor
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
-
The characterization of aluminum gallium arsenide resonant tunneling diodes at microwave frequencies
Double-barrier, single-quantum-well, resonant tunneling diodes employing variable thickness Al$\sb{0.25}$Ga$\sb{0.75}$As barriers and 5 nm GaAs wells have been studied. Low doped GaAs buffer regions ($N\sb D$ $\approx$ 5 $\times$ 10$\sp{16}$ cm$\sp{-3}$) were placed next to the barriers to reduce …
-
Resonant tunneling and its prospects in Si/ZnS and Si/CaF₂ heterostructures
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
-
Scaling to submicron for III-nitride optoelectronic devices: Applications in micro light emitting diodes and resonant tunneling diodes
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01
-
An analytical approach to quantum mechanical tunneling time in electronic devices
… analytical expression for the APT time through a resonant tunneling structure, two symmetrical rectangular potential barriers sandwiching a potential well, under no bias. The results of the single potential barrier traversal time are compared with that of other approaches. The APT time is …
-
Experimental investigation of hot electron and related effects in gallium(aluminum)arsenide devices
… of semiconductor heterojunction devices such as resonant tunneling and ballistic transport and various hot electron effects discussed within, have been moved from the status of academic curiosity to physically realizable, useful effects.
-
Electron Transport through Carbon Nanotube Quantum Dots in A Dissipative Environment
… phase transition in a very basic system: a resonant level coupled to a dissipative environment. Specifically, the resonant level is formed by a quantized state in a carbon nanotube, and the dissipative environment is realized in resistive leads; and we study the shape of the resonant peak by …
-
Size Dependence of the Electrical Characteristics of Silicon Nanoparticles
… from 2.9 to 1 nm in diameter. Using a scanning tunneling microscope we studied the electronic structure of the particles. Resonant tunneling through hole states was observed when the samples were excited with light. The energy levels of these hole states were matched to theoretical models and …
-
Electronic properties and device applications of rotationally controlled van der Waals heterostructures
… transverse electric-field. We also demonstrate resonant tunneling in double bilayer graphene heterostructures using hexagonal boron nitride (hBN) as an interlayer dielectric, in which rotational alignment between the two bilayer graphene is the key ingredient for the device functionality. To …
-
Cross-Sectional Scanning Tunneling Microscopy Investigations of Cleaved Iii-V Heterostructures
… has been satisfied by cross-sectional scanning tunneling microscopy (XSTM). This thesis details the development and application of XSTM to III-V heterostructures. An ultra-high vacuum (UHV) system dedicated to XSTM has been specifically designed and constructed as part of this work. Reported for …
-
Observation of nonlinear tunneling of a Bose-Einstein condensate in a single Josephson junction
… a focused laser beam optical dipole trap. The tunneling dynamics between the two potential wells exhibits two distinct dynamical regimes. For small initial population imbalances of the two wells we observe nearly sinusoidal Josephson tunneling oscillations, which are characterized by an …
-
High-bias studies on metal-insulator-metal and metal-insulator-semiconductor tunnel junctions
… is observed, while at intermediate biases tunneling into interface states is identified in p-typesilicon junctions. At high biases both silicon and aluminum junctions display behavior which cannot be understood within the framework of the average potential barrier model; in particular, …
-
Imaging transport resonances in the quantum Hall effect
… enables breaching of the IS barrier by means of resonant tunneling through the island. Striking ring shapes appear in the images that directly reflect the shape of the IS created in the 2DES by the tip. Through the measurements of leakage across the IS, we extract information about energy gaps in …
-
Using imperfect semiconductor systems for unique identification
… in the current‐voltage characteristics of Resonant Tunneling Diodes (RTDs) were found to provide a simple measurement of the underlying quantum state electronically. • Optically ‐ Macroscopic thin films of the two‐dimensional material, MoS2, were created by the Langmuir‐Blodgett technique …
-
Electronic devices based on 2D material: fabrication, characterization and analysis
… (such as metal-oxide field effect transistors, tunneling field effect transistor, and resonant tunneling diodes) based on BP.
-
Synthesis of large-area two-dimensional materials for vertical heterostructures
… systems are identified for application in resonant tunneling and steep-slope devices. Further, the impact of scaling and defects on device performance is explored. From an experimental standpoint, this work demonstrates wafer-scale synthesis of TMDs using high temperature growth methods. In …
Page 1 of 2