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Showing 1 to 7 of 7 for “"Resistive switching memory"”.

  1. Characterisation of Novel Resistive Switching Memory Devices

    Resistive random access memory (RRAM) is widely considered as a disruptive technology that will revolutionize not only non-volatile data storage, but also potentially digital logic and neuromorphic computing. The resistive switching mechanism is generally conceived as the rupture/restoration of …

    liverpool-jm Repository record for Characterisation of Novel Resistive Switching Memory Devices (opens in a new tab)

  2. Initial oxidation of zirconium : chemistry, atomic structure, transport and growth kinetics

    … zirconia based technologies, such as redox based resistive switching memory devices, gate dielectric for metal oxide semiconductor devices, and electrolytes for solid oxide fuel cells ...

    mit Repository record for Initial oxidation of zirconium : chemistry, atomic structure, transport and growth kinetics (opens in a new tab)

  3. Resistive Switching Behavior in Low-K Dielectric Compatible with CMOS Back End Process

    … power dissipation in highly integrated logic and memory nanoelectronic products, numerous changes in the materials and processes utilized to fabricate the interconnect have been made in the past decade. Chief among these changes has been the replacement of aluminum (Al) by copper (Cu) as the …

    vt Repository record for Resistive Switching Behavior in Low-K Dielectric Compatible with CMOS Back End Process (opens in a new tab)

  4. CHARACTERIZATION OF SNEAK PATH CURRENT EFFECT IN A PEDOT: PSS-BASED ReRAM CROSSBAR ARRAY

    … presents an experimental characterization of resistive switching memory crossbar devices fabricated on glass substrates with a structure of Cu/PEDOT: PSS/Ag, with a particular focus on understanding the impact of sneak-path currents on the switching performances. Resistive memory cells, …

    washington Repository record for CHARACTERIZATION OF SNEAK PATH CURRENT EFFECT IN A PEDOT: PSS-BASED ReRAM CROSSBAR ARRAY (opens in a new tab)

  5. Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform

    … scaling potential, low power consumption, high switching speed, and good retention, and endurance properties, Resistive Random Access Memory (RRAM) is one of the prime candidates to supplant current Nonvolatile Memory (NVM) based on the floating gate (FG) MOSFET transistor, which is at the end …

    vt Repository record for Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform (opens in a new tab)

  6. Resistive Switching in Porous Low-k Dielectrics

    … to lower the increasing RC delays is to bring memory and logic closer by integrating memory in the BEOL. Resistive RAM is one such memory is not transistor based and thus, does not require a silicon substrate. Thus, it offers the possibility of integration directly into the back-end reducing …

    vt Repository record for Resistive Switching in Porous Low-k Dielectrics (opens in a new tab)

  7. Impact of Inert-electrode on the Performance and Electro-thermal Reliability of ReRAM Memory Array

    … novel type of non-volatile memories, such as resistive switching memories, have lately found increased attention by both industry and academia. Resistive switching memory (ReRAM) is being considered one of the prime candidates for next-generation non-volatile memory due to relatively high …

    vt Repository record for Impact of Inert-electrode on the Performance and Electro-thermal Reliability of ReRAM Memory Array (opens in a new tab)