Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 11 of 11 for “"Resistive random access memory (RRAM)"”.
-
Evaluation of the colossal electroresistance (CER) effect and its application in the non-volatile Resistive Random Access Memory (RRAM)
Flash memory, the current leading technology for non-volatile memory (NVM), is projected by many to run obsolete in the face of future miniaturization trend in the semiconductor devices due to some of its technical limitations. Several different technologies have been developed in attempt for …
-
SHARC : self-healing analog with RRAM and CNFETs
… fine-grained and dense integration of logic and memory. However, isolated improvements in just one area is insufficient. Rather, enabling these next-generation applications will require combining benefits across all levels of the computing stack: leveraging new devices to realize new circuits and …
-
Analog-to-Digital Converters for Secure and Emerging AIoT Applications
… hardware. Analog neural networks (ANNs) with in-memory computing (IMC) using resistive random-access memory (RRAM) are promising architectures to reduce latency and increase energy efficiency for IoT devices. However, interface circuitry, including analog-to-digital converters (ADCs) between RRAM …
-
Formation and Rupture of Nanofilaments in Metal/TaOx/Metal Resistive Switches
… an increased interest in the Conductive Bridge Random Access Memory (CBRAM) and Resistive Random Access Memory (RRAM) because of their excellent scaling potential, low power consumption, high switching speed, good retention and endurance properties. Although, various mechanisms have been …
-
All Analog CNN Accelerator with RRAMs for Fast Inference
… the same hardware. We propose a novel design for memory cells using resistive random access memory (RRAM) and computation units utilizing the analog behavior of transistors. This circuit classifies one Cifar-10 dataset image in 6µs (160k frames/s) with 2.4µJ energy per classification with an …
-
Mechanisms, Conditions and Applications of Filament Formation and Rupture in Resistive Memories
Resistive random access memory (RRAM), based on a two-terminal resistive switching device with a switching element sandwiched between two electrodes, has been an attractive candidate to replace flash memory owing to its simple structure, excellent scaling potential, low power consumption, high …
-
Characterisation of Novel Resistive Switching Memory Devices
Resistive random access memory (RRAM) is widely considered as a disruptive technology that will revolutionize not only non-volatile data storage, but also potentially digital logic and neuromorphic computing. The resistive switching mechanism is generally conceived as the rupture/restoration of …
-
New ways to tune the multi-functionality of oxide thin films for memory applications
… to enhance their multi-functionality for various memory applications. First, electroforming-free resistive switching (RS) with high ON/OFF ratio is realized in a novel model VAN system based on self-assembled Sm-doped CeO2 and SrTiO3 films that allow separate tailoring of nano-scale ionic and …
-
Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform
… and good retention, and endurance properties, Resistive Random Access Memory (RRAM) is one of the prime candidates to supplant current Nonvolatile Memory (NVM) based on the floating gate (FG) MOSFET transistor, which is at the end of its scaling capability. The RRAM technology comprises two …
-
Functional Oxides in Optical and Electronic Applications by Atmospheric Pressure Spatial Chemical Vapour Deposition
… multiple fields, particularly in electronics and memory technology. These thin films are used in resistive random-access memory (RRAM) due to their ability to alter resistance states, which is crucial for non-volatile memory applications. With the growing demand for efficient data storage, and …
-
Scaling study of phase change memory using carbon nanotube electrodes
Demands for data storage and computer memory are growing exponentially. It is thus essential to find a new scalable, energy-efficient memory technology. We have been investigating the smallest and most energy-efficient data storage technology, based on phase change materials (PCMs) rather than …