Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 8 of 8 for “"Remote Epitaxy"”.
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Gallium Nitride Remote Epitaxy
… a new layer transfer technology based on remote epitaxy is developed. Remote epitaxy takes advantage of the atomic thickness of the two-dimensional (2D) material so that the wafer covered by 2D material can still be the substrate for epitaxial growth. At the same time, the weak van der …
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Mechanism of remote epitaxy using two dimensional materials
Van der Waals epitaxy (vdWE) has gained great interest as it provides the ability to relax the strict lattice matching conditions required in conventional epitaxy of covalent or ionic single crystal substrates. With the rise of two-dimensional (2D) materials since the isolation of graphene in 2004, …
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Remote epitaxy of III-N membranes on amorphous boron nitride
… structures. In this thesis, Molecular-Beam Epitaxy (MBE) grown monolayer aBN in two-dimensional structure is demonstrated. In-situ gallium nitride (GaN) remote epitaxy is finished on the transparent monolayer aBN. By doing the in-situ remote epitaxy, contaminations are avoided, and epitaxial …
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Remote Epitaxy by In-Situ Grown BN and InGaN Strain Relaxation
… In 2017, a layer transfer technique based on remote epitaxy was introduced to overcome the drawbacks of conventional lift-off methods. By inserting a layer of 2D material between the epitaxial layer and the substrate, the epitaxial layer can be mechanically peeled off because of the van der …
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Nanoscale Engineering for Mixed-Dimensional Heterostructure Growth and Integration
… of electronic properties. On the other hand, remote epitaxy – an emerging growth method of singlecrystalline membranes copied from the underlying substrates through the atomically thin graphene interlayer – has been alternatively suggested to solve major challenges in all-2D vdW …
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Advanced Epitaxy on 2D Materials for Bottom-up Heterointegration with Low-defects and Membrane Production with High-throughput
Conventional epitaxy has significantly advanced the semiconductor industry, driving remarkable progress in various application fields such as electronics and optoelectronics. However, several limitations of epitaxial techniques have impeded the development of next-generation electronic and …
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Two-dimensional material based layer transfer of thin film devices
… is enabled by a novel concept of semiconductor epitaxy, termed remote epitaxy. This thesis explores remote epitaxial growth of compound semiconductors on a graphene coated substrates and exfoliation of epitaxial films grown on graphene. Due to the atomic-thickness of graphene and weak van der …
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Development of graphene growth surfaces for III-V semiconductors
… on the development of the emerging technique of remote epitaxy, which exploits an atomically thin two-dimensional (2D) material as an interface layer between a III-V growth substrate and an epitaxial film. For example, 2D material such as graphene coated on GaAs substrates allows the registry …