Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 27 for “"Recombination Lifetime"”.
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Recombination lifetime analysis of deep levels in silicon
… traditional sense but they can also control the recombination of non-equilibrium charge carriers. The properties of these recombination levels reflect the processes of energy exchange and provide information on the defect structure and energy spectrum and are thus of physical interest. Also since …
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Development of non-contact measurements for carrier recombination lifetime
Includes bibliographical references (pages 108-112).
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Development of non-contact measurements for carrier recombination lifetime
Includes bibliographical references (pages 108-112).
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Process Development for High Speed Transistor Laser Operation
… and minority carrier collection to reduce the recombination lifetime in the active region of the device to <30 ps. A fast recombination lifetime <30 ps reduces the photon-carrier resonance when modulating the device at RF frequencies. However, the transistor laser with high intrinsic optical …
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Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers
Carrier spontaneous recombination lifetime has been thought to be limited to ~ 1 ns in light-emitting diodes and diode lasers for the past forty years. In the present work the recombination lifetime demonstrated is able to be “tailored” (reduced) by the provided material system, cavity size, and …
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Physical modeling of base carrier lifetime and frequency response of heterojunction bipolar transistor
… give an analytical expression for the carrier lifetime in the base, which is a key factor for device frequency performance. Expressions for the physical parameters such as capture time, base recombination lifetime and base transit time are obtained in terms of experimental values such as base …
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Microwave characterization of vertical cavity surface emitting diode laser and transistor laser
… fundamentally limited by the slow spontaneous recombination lifetime. Therefore, a new kind of semiconductor laser, the transistor laser (TL), is proposed to break the bandwidth bottleneck as the dynamic carrier transport in the base of a TL drastically reduces the spontaneous recombination …
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Assessing materials quality for high efficiency electricity generation
… Decay) is used to measure the bulk lifetime as well as the surface recombination lifetime of minority carriers in both n- and p-type Silicon of various doping concentrations. The surface recombination velocity was calculated from the measurement of surface recombination lifetime and …
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Analysis of transistor laser intra-cavity photon-assisted tunneling for direct voltage modulation
… current modulation scheme in which the carrier recombination lifetime in the active region governs the ultimate speed of operation. The transistor laser, due to its enhanced carrier recombination in the bipolar junction transistor base region, is a promising candidate to replace the diode laser …
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Semiconductor Optical Preamplifiers for Use in High-Speed Integrated Photoreceivers at 1.3 Um and 1.55 Um
… low-frequency effects attributed to the carrier-recombination lifetime. Second, a self-aligned processing scheme is developed for fabricating semiconductor lasers, optical amplifiers, and photodetectors in this material system; this scheme emphasizes fabrication simplicity and low contact …
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Direct tunneling modulation and signal mixing of semiconductor lasers
… speed limit by further reducing the carrier recombination lifetime. In addition, a recently discovered tunneling mechanism inside the transistor laser device structure paves the way for ultrahigh-speed direct modulation of laser optical output. In this work, the operation of the transistor …
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Development of vertical cavity transistor laser and microcavity laser
… the VCSEL bandwidth is limited by the slow recombination lifetime in the active region, which is the major challenge to transmitting at a data rate greater than 60 Gbit/s for a single VCSEL. To push the modulation speed, Purcell enhancement in the small volume and high Q cavity can be …
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Monolithic electronic-photonic integration of the light-emitting transistor
… in the base terminal, which enables fast optical recombination lifetime. In 2003, Holonyak and Feng discovered the light-emitting transistor (LET) from their recognition that the transistor base recombination in a direct-gap (III-IV) material generates light related to the applied signal. The …
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Signal modulation and relative intensity noise properties of transistor laser and nano-cavity VCSEL
… advantages such as fast base spontaneous recombination lifetime, high differential optical gain, and low carrier injection density. Due to these characteristics, we have demonstrated that the TL is able to achieve high speed resonance-free optical response as well as ultra-low laser …
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Approaching Novel Perovskites Photovoltaic Devices through Machine Learning and Interfacial Engineering
… long carrier diffusion length, and carrier recombination lifetime [6-9]. However, even with an increasing number of studies carried out, perovskite solar cell is still facing plenty of challenges towards commercialization. Two main challenges towards large-area commercialization include …
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Ultrafast Dynamics of Individual Air-Suspended Single-Walled Carbon Nanotube
… efficiency, absorption cross section, radiative lifetime, and Auger recombination lifetime). With the advancement in SWCNT sample preparation, studies of SWCNT intrinsic properties have shifted from ensemble to a single tube level, in which the ambiguities in elucidating intrinsic properties …
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Electrical properties of silicon surfaces and interfaces
… of Si surfaces is monitored in terms of surface recombination lifetime, employing radio frequency photo conductance decay (rfPCD) measurements. J/methanol treated surfaces are shown to have higher lifetimes and greater air stability than hydrogen terminated surfaces, while retaining comparable …
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Compensation engineering for silicon solar cells
… mobility compared to theoretical models and a recombination lifetime which is determined by the net dopant density and dominated after long-term illumination by the boron-oxygen recombination centre. To allow accurate modelling of upgraded-metallurgical silicon solar cells, we propose a …
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Compensation engineering for silicon solar cells
… mobility compared to theoretical models and a recombination lifetime which is determined by the net dopant density and dominated after long-term illumination by the boron-oxygen recombination centre. To allow accurate modelling of upgraded-metallurgical silicon solar cells, we propose a …
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Controlling iron and copper precipitation in silicon wafers
… The study also includes the development of recombination lifetime methods for impurity characterization in silicon. A method to measure trace copper contamination in silicon using the microwave photoconductivity decay is proposed. The method is based on the observation that copper …
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