Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 10 of 10 for “"ReRAM"”.
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The Investigation of Inorganic Co Based ReRAM Devices and Organic Cu Doped PANI-CSA Top Electrode Based ReRAM Devices
… the resistance switching random access memory (ReRAM) in several MIM systems has been studied extensively for applications to the next generation non-volatile memory (NVM) devices and memristors since the scaling of conventional memories based on floating gate MOSFETs is getting increasingly …
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CHARACTERIZATION OF SNEAK PATH CURRENT EFFECT IN A PEDOT: PSS-BASED ReRAM CROSSBAR ARRAY
… memory arrays.In this work, I investigate how a ReRAM cell in a crossbar array responds to prolonged electrical stress by applying low-voltage cycling corresponding to a sneak-path conduction. The device has a PEDOT:PSS as a switching layer sandwiched between Cu bottom electrode and Ag top …
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Impact of Inert-electrode on the Performance and Electro-thermal Reliability of ReRAM Memory Array
… and academia. Resistive switching memory (ReRAM) is being considered one of the prime candidates for next-generation non-volatile memory due to relatively high switching speed, superior scalability, low power consumption, good retention and simplicity of its structure which does not require …
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Impact of Thermal Effects and Other Material Properties on the Performance and Electro-Thermal Reliability of Resistive Random Access Memory Arrays
… like Resistive Random Access Memory (ReRAM) are gaining prominence in the scientific community. Boasting a straightforward device structure, ease of fabrication, and compatibility with CMOS (Complementary Metal-oxide Semiconductor) Back-end of Line (BEOL), ReRAM stands as a leading …
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Fabrication and Characterization of HfO2 Based Resistive Random Access Memory Devices
… of performance. Resistive Random Access Memory (ReRAM) is a leading candidate to be the first universal memory. As a two-terminal device with 3D capability, DRAM-like latency, and non-volatile storage, it essentially meets the requirements. Higher endurance and higher yield are the two most …
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Density Functional Simulations of Defect Behavior in Oxides for Applications in MOSFET and Resistive Memory
… (MOSFETs) and resistive random-access memories (ReRAMs). The continuous scaling of CMOS has brought the Si MOSFET to its physical technology limit and the replacement of Si channel with Ge channel is required. However, the performance of Ge MOSFETs suffers from Ge/oxide interface quality and …
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Efficient, Accurate, and Flexible PIM Inference through Adaptable Low-Resolution Arithmetic
… costly data movement and by using resistive RAM (ReRAM) for efficient analog compute. Unfortunately, overall PIM accelerator efficiency and throughput are limited by area/energy-intensive analog-to-digital converters (ADCs). Furthermore, existing accelerators that reduce ADC area/energy do so by …
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Integrating physical unclonable functions from novel nanomaterials, circuit elements, and memory technologies into future hardware architectures
… Magnetoresistive RAM (MRAM), and Resistive RAM (ReRAM). These new technologies, in turn, necessitate innovative hardware security solutions for generating intrinsic hardware fingerprints, ensuring security for next-generation embedded devices. Furthermore, the integration of nanomaterials, such …
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Cross-layer methods for energy-efficient inference using in-memory architectures
… beyond-CMOS technologies such as STT-MRAM and ReRAM crossbars have become popular due to their advantages in terms of density and scalability. However, such resistive crossbars suffer from inaccurate writes due to device variability and cycle-to-cycle (CTC) variations. We present the …
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Memristor-based hardware accelerators: from device modeling to AI applications
L'abstract è presente nell'allegato / the abstract is in the attachment