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Showing 1 to 1 of 1 for “"Rauscheigenschaft"”.
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Design and development of radiation-resistant and low-noise semiconductor transistors for applications in high frequency communication systems
In the frame of this work, the fundamental properties of GaN/AlGaN HEMT structures have been investigated in order to optimize their performance in high power microwave devices. A number of properties have been studied, starting from DC transport properties in bare 2DEG channels up to investigation …