Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 33 for “"Rapid Thermal Annealing"”.
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The effects of rapid thermal annealing on gallium arsenide grown by MOCVD on silicon substrates
Thesis: M.S., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 1988
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patial Control of the Conductivity of Poly(3,4-ethylenedioxythiopehe): Poly(styrenesulfonate) Thin Films
… thin films have undergone treatment from rapid thermal processing and direct ultraviolet irradiation at a wavelength of 254 nm. Through various characterization methods, the underlying physical changes as a result of rapid thermal annealing indicate a shift of morphology that correlates to …
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Modeling and Control of Transient Enhanced Diffusion of Boron in Silicon
Reducing the junction depth using rapid thermal annealing with high heating rates comes at a cost of increasing sheet resistance. A model-based optimization is formulated to design the optimal annealing temperature program that gives the minimum junction depth while maintaining satisfactory sheet …
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High-K MOSFETS with high mobility channels
… demonstrates Ge n+/p junction formation by laser annealing. A gate-first self-aligned Al/TaN/HfO2/Ge nMOSFET with source/drain activated by laser annealing is shown to give small source/drain resistance and good gate-stack integrity simultaneously, thereby superior electrical properties than the …
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TEM Study of a RTO Oxide-Interfacial Layer on Epitaxial-Cobalt Silicide (CoSi2) Formation
… lot of interest due to its low sheet resistance, thermal stability, low stress state and interfacial uniformity with the silicon substrate. Recently, there has been many studies to investigate the growth of epitaxial CoSi2 on Si using a interlayer material such as Ti (TIME) and SiOx (OME). In this …
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Post-crystallisation treatment and characterisation of polycrystalline silicon thin-film solar cells on glass
… of two post-crystallisation process steps (rapid thermal annealing and hydrogenation) on the electrical properties of poly-Si on glass diodes. The optimum RTA peak temperature is determined to be about 1000 &176;C, whereby this process shifts the p-n junction by 0.55 microns into the …
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Nanolaminate coatings to improve long-term stability of plasmonic structures in physiological environments
… deposition, RIE, Atomic Layer Deposition and Rapid Thermal Annealing. An alternate approach using Nanosphere Lithography (NSL) was also investigated. Films were examined using ellipsometry, atomic force microscopy and transmission measurements. Accelerated in-situ tests of Hafnium …
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Optical and Interface-Based Methods of Defect Engineering in Silicon
… of the implanted dopant electrically inactive. Rapid thermal annealing (RTA) heals the damage by rapidly heating the substrate with a high-power light source. This work uses experiments and continuum-based modeling to develop a scientific understanding of how illumination and the state of the …
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A test structure for the measurement and characterization of layout-induced transistor variation
… different polysilicon density or STI density. A rapid change of pattern density between blocks is designed to emulate a step response for future modeling. The two pattern densities are chosen to reflect the introduction of new process technologies, such as strain engineering and rapid thermal …
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Development and application of saturable absorbers to femtosecond solid-state laser mode-locking
… wavelength relative to the absorption edge, and rapid thermal annealing temperature. Guidelines for the optimization of semiconductor-doped silica films for saturable absorber applications were extracted from the experimental data.
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Atomic layer deposition Al2O3-passivated AlGaN/GaN high-electron-mobility transistors on Si(111) towards reliable high-speed electronics
… metal stacks has been achieved by three-step rapid thermal annealing. Furthermore, it is revealed that annealed, thin-Al2O3 dielectric is an effective (Al)GaN surface passivation alternative for minimizing passivation-associated parasitic capacitance, yet non-ideal for significantly …
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DESIGN, FABRICATION AND CHARACTERIZATION OF EPITAXIAL AND NON-EPITAXIAL THERMO-PHOTOVOLTAIC CELLS
… significant potential in efficiently converting thermal energy to electrical energy. These applications include conversion from internal combustion engines, small nuclear sources and even portable fuel-based sources. Group-III antimonide semiconductors have been identified as the material of …
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Novel dilute nitride semiconductor materials for mid-infrared applications
… laser excitation power and temperature. Rapid thermal annealing on InAsN layers improved the photoluminescence intensity and blueshifted the transition energy. InAsN was successfully grown with high crystalline quality. It showed strong photoluminescence which persisted up to room …
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Investigation of defect formation and control in poly-crystalline anatase titanium dioxide
… that films differentially compacted during annealing according to thickness leading to less area at grain boundaries for defects to aggregate. We sought to further that success by several methods. Lowering growth rate and increasing synthesis temperature sought to lower carrier concentration …
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Characterization of Proton and Sulfur Implanted GaSb Photovoltaics and Materials
… (27 C) and 200 C, respectively, and rapid thermal annealing (RTA) was implemented at various temperatures and durations upon encapsulated GaSb. The damage induced by protons enhanced the hole density of GaSb up to around 10 times, whereas mobilities showed both increase and decrease …
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Surface and bulk passivation of multicrystalline silicon solar cells by silicon nitride (H) layer : modeling and experiments
… The majority of surface damage can be healed by rapid thermal annealing (RTA). Therefore, less minority-carrier recombination in the SCR is expected after the firing treatment of Si solar cells. Based on the damaged layer and trapping/detrapping theory, a semi-quantitative hydrogen transportation …
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Laser Annealing and Dopant Activation in III-V Materials
… that my work addresses-- studying how fast thermal processing could improve the electrical properties of doped III-V and III-N materials. Using sub-millisecond to millisecond laser spike annealing (LSA), we can transiently reach high annealing temperatures, and, in this way, improve …
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Monolithic Integration of Thermally Stable Enhancement-Mode and Depletion-Mode Indium Phosphide HEMTs Utilizing Iridium-Gate and Silver-Ohmic Contact Techniques
… resistance of 0.06 O-mm was obtained at an annealing temperature of 425°C for 60 s in a rapid thermal annealing system. Thermal storage tests showed that the Ag-based ohmic contacts had far superior thermal stability than the conventional AuGe/Ni ohmic contacts for InAlAs/InGaAs/InP …
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Effects of ion processing and substrate variables on electrical characteristics of GaAs
… of GaAs substrate, crystalline orientation, and annealing. Transport and deep level transient spectroscopy (DLTS) results are presented for 50 keV Si-implanted and RTA (rapid thermal annealing) GaAs with (100) and (211) substrate orientations. Several electron traps are identified and their …
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GeSn semiconductor for micro-nanoelectronic applications
… Ti) annealed with two distinct methodologies (Rapid Thermal Annealing and Laser Thermal Annealing). Subsequently, considering the material limitation such as the limited thermal budget and the Sn segregation, an exhaustive study on the material doping has been firstly discussed theoretically …
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