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Showing 1 to 20 of 71 for “"Radiative recombination"”.

  1. Partial Radiative Recombination Cross Sections for Excited States of Hydrogen

    <p>In calculating the radiative recombination cross sections for interstellar H II regions usually only the electric dipole term in the expansion of the interaction Hamiltonian is kept. However, conditions present in these regions permit recombination into highly excited states and the "effective …

    odu Repository record for Partial Radiative Recombination Cross Sections for Excited States of Hydrogen (opens in a new tab)

  2. Indium Gallium Arsenide and Indium Arsenide Phosphide Injection Lasers and Radiative Recombination in Nitrogen-Zinc-Doped Gallium Arsenide Phosphide

    Made available in DSpace on 2015-05-12T22:39:00Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7411966.PDF: 3851014 bytes, checksum: cd1a4a475e1514b2d5520a344358ec96 (MD5) Previous issue date: 1973

    uiuc Repository record for Indium Gallium Arsenide and Indium Arsenide Phosphide Injection Lasers and Radiative Recombination in Nitrogen-Zinc-Doped Gallium Arsenide Phosphide (opens in a new tab)

  3. Modeling and optimization of the transistor laser operation

    … the cladding structure of the base. Second, the radiative recombination is analyzed from the first principles. The results indicate that the radiative recombination saturates in degenerately doped cases, where Auger recombination becomes dominant and deteriorates the quantum efficiency. Finally, …

    uiuc Repository record for Modeling and optimization of the transistor laser operation (opens in a new tab)

  4. The self-consistent simulation of carrier transport and its effect on the modulation response in semiconductor quantum well lasers

    … diode are discussed in detail. The dark and radiative recombination processes and the carrier transport mechanisms included in the simulator are first presented. Carrier transport in bulk regions of the device is modeled with drift-diffusion theory, and carrier fluxes at abrupt …

    uiuc Repository record for The self-consistent simulation of carrier transport and its effect on the modulation response in semiconductor quantum well lasers (opens in a new tab)

  5. Removing the Spin-Triplet Loss Pathway in Organic Solar Cells: A Strategy to Enhance Radiative Efficiency and Minimise Energy Loss

    … as a result of unavoidable non-geminate charge recombination processes. Triplet excitons represent a major non-radiative loss pathway in organic solar cells and through this work, we demonstrate tactics to reduce the non-radiative decay of photo-generated charges and thereby enhance the …

    cambridge Repository record for Removing the Spin-Triplet Loss Pathway in Organic Solar Cells: A Strategy to Enhance Radiative Efficiency and Minimise Energy Loss (opens in a new tab)

  6. Charge Carrier Localisation in Metal Halide Perovskites for Optoelectronic Applications

    … carriers to accumulate in low-bandgap regions. Recombination of charges at these sites follows quasi-first-order kinetics and the locally high carrier density allows bimolecular radiative recombination to outcompete trap-mediated loss channels. Thus, the photoluminescence yields in mixed-halide …

    cambridge Repository record for Charge Carrier Localisation in Metal Halide Perovskites for Optoelectronic Applications (opens in a new tab)

  7. Optoelectronic properties of size-selected silicon nanocrystals

    … distributions of EL and PL agree or disagree, radiative recombination via quantum confined states or recombination via silicon oxide related states is proposed as mechanism of EL.

    oldenburg Repository record for Optoelectronic properties of size-selected silicon nanocrystals (opens in a new tab)

  8. Three -Port Modulation of Indium Gallium Phosphide/gallium Arsenide Transistor Lasers

    … HBLET with AlGaAs confining layers and an InGaAs recombination QW incorporated in the p-type base region. Furthermore, the microwave operation and modulation (3 GHz) of an InGaP/GaAs HBT laser is reported using a 450-mum long cavity. The shift in HBT laser operation from spontaneous to stimulated …

    uiuc Repository record for Three -Port Modulation of Indium Gallium Phosphide/gallium Arsenide Transistor Lasers (opens in a new tab)

  9. GaN sensorių optinio ir elektrinio atsako charakteristikų tyrimas /

    … defects. Therefore, carrier lifetime ascribed to radiative and non-radiative recombination has been examined by combining time-resolved luminescence and microwave probed photo-conductivity transient techniques, respectively. The charge collection efficiency (CCE) has been examined by surface and …

    vilnius Repository record for GaN sensorių optinio ir elektrinio atsako charakteristikų tyrimas / (opens in a new tab)

  10. Investigation of carrier dynamics in InN, InGaN, and GaAsBi by optical pump-probe techniques /

    … temperatures revealed that trap-assisted Auger recombination is the dominant recombination mechanism in MBE-grown InN layers at room temperature. Investigation of carrier dynamics in In-rich InGaN alloys revealed that density of fast nonradiative recombination centers increases with Ga content. …

    vilnius Repository record for Investigation of carrier dynamics in InN, InGaN, and GaAsBi by optical pump-probe techniques / (opens in a new tab)

  11. Advancing inorganic perovskite solar cells for application in tandem architectures

    … the internal field and therefore increasing non-radiative recombination. Even though the ion densities were similar, this decrease in PCE was lower in DMAI-CsPbI3 perovskite solar cells as compared to CsPbI2Br perovskite solar cells. This suggests that the more effective interface passivation in …

    tu-berlin Repository record for Advancing inorganic perovskite solar cells for application in tandem architectures (opens in a new tab)

  12. Electron-Ion Recombination at Temperatures below 300K

    Title: Recombination study of ions with electrons at temperatures below 300 K Author: Tomáš Kotrík Department: Department of Surface and Plasma Science Supervisor of the doctoral thesis: Prof. RNDr. Juraj Glosík, DrSc. Department of Surface and Plasma Science Abstract: Presented is the study of …

    charles-prague Repository record for Electron-Ion Recombination at Temperatures below 300K (opens in a new tab)

  13. Izovalentiškai legiruotų cinko selenido scintiliacinių kristalų priemaišinės liuminescencijos tyrimai /

    … spectroscopy revealed peculiarities of the radiative recombination mechanisms in ZnSe doped with tellurium and oxygen. A new carrier recombination model in ZnSe crystals doped with tellurium and oxygen is proposed and numerical simulation of the PL intensity dependence on temperature is …

    vilnius Repository record for Izovalentiškai legiruotų cinko selenido scintiliacinių kristalų priemaišinės liuminescencijos tyrimai / (opens in a new tab)

  14. Izovalentiškai legiruotų cinko selenido scintiliacinių kristalų priemaišinės liuminescencijos tyrimai /

    … spectroscopy revealed peculiarities of the radiative recombination mechanisms in ZnSe doped with tellurium and oxygen. A new carrier recombination model in ZnSe crystals doped with tellurium and oxygen is proposed and numerical simulation of the PL intensity dependence on temperature is …

    vilnius Repository record for Izovalentiškai legiruotų cinko selenido scintiliacinių kristalų priemaišinės liuminescencijos tyrimai / (opens in a new tab)

  15. Perovskite Light-emitting Diodes with Tunable Emission

    … it difficult to confine the charges and form radiative recombination which is crucial for emission and efficiency of the device. We move into lower dimensionality perovskites by utilising all-inorganic perovskite nanoplatelets and show emission in the blue region.

    cambridge Repository record for Perovskite Light-emitting Diodes with Tunable Emission (opens in a new tab)

  16. Fabrication and Characterization of Electrically Injected Photonic Crystal Light Emitters

    … optical mode to the gain medium and reduces non-radiative recombination at the semiconductor air interfaces formed by the photonic crystal air holes. The use of a submicron diameter oxide aperture enables optical and electrical confinement. The design parameters of the photonic crystal nanocavity …

    uiuc Repository record for Fabrication and Characterization of Electrically Injected Photonic Crystal Light Emitters (opens in a new tab)

  17. Effect of controlled oxidation processes on the emission and excitation of porous silicon

    … based on quantum confinement, namely bulk-like radiative recombination and novel radiative surface state recombination. In small crystallites the number of surface atoms is a sizeable fraction of the total and therefore surface conditions (both type and quality) are expected to play an important …

    uiuc Repository record for Effect of controlled oxidation processes on the emission and excitation of porous silicon (opens in a new tab)

  18. Design and analysis of solar cells by coupled electrical - optical simulation

    … coupled in both directions. Photons generated by radiative recombination can be reabsorbed to create additional electron-hole pairs (so-called photon recycling), which decreases losses. A variety of novel photon management schemes are currently being explored. To achieve the promise of these new …

    purdue-thes Repository record for Design and analysis of solar cells by coupled electrical - optical simulation (opens in a new tab)

  19. Structure, electronic levels, and ionic interactions of 1 nanometer silicon particles

    … dependent density functional theory, which show radiative traps accessible via direct excitation at the band edge of the ground state geometry. The self-trapped excitons proposed by Lannoo et al. [1, 2] are found to be unstable for the Si29H24 structure, with the outer-well leading to …

    uiuc Repository record for Structure, electronic levels, and ionic interactions of 1 nanometer silicon particles (opens in a new tab)

  20. Visible spectroscopic imaging on the Alcator C-Mod tokamak

    … emissivity profiles of Da, volumetric recombination rate profiles have been measured and found to have a structure that depends on a poloidal temperature gradient in the outer scrape-off-layer. 2) A camera viewing the inner wall tangentially was used to measure Da emission profiles. A …

    mit Repository record for Visible spectroscopic imaging on the Alcator C-Mod tokamak (opens in a new tab)

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