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Showing 1 to 20 of 20 for “"RRAM"”.
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SHARC : self-healing analog with RRAM and CNFETs
… for logic and Resistive Random-Access Memory (RRAM) for memory are two promising emerging nanotechnologies for energy-efficient electronics. However, CNFETs suffer from inherent imperfections (such as of metallic CNTs, m-CNTs), which have prohibited realizing large-scale CNFET circuits in the …
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Evaluation of the colossal electroresistance (CER) effect and its application in the non-volatile Resistive Random Access Memory (RRAM)
… at the moment. Among these technologies is RRAM (Resistive Random Access Memory), a novel type of memory technology which has only recently emerged to join the race. The underlying principle of an RRAM device is based on the colossal electroresistance (CER) effect, i.e. the resistance …
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Neuromorphic computing systems : crystalline resistive random access memory
… resistive random-access memory (crystalline RRAM) artificial synapses for neuromorphic computing. The main scaling bottleneck is poor temporal and spatial uniformity of artificial synapses. To the best of the author's knowledge, crystalline RRAM reported in this thesis have the lowest …
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Characterisation of Novel Resistive Switching Memory Devices
Resistive random access memory (RRAM) is widely considered as a disruptive technology that will revolutionize not only non-volatile data storage, but also potentially digital logic and neuromorphic computing. The resistive switching mechanism is generally conceived as the rupture/restoration of …
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Lab-to-Fab Monolithic 3D Integrated Carbon Nanotube Transistors: Scaling and Reliability
… carbon nanotube FET (CNFET) + Resistive RAM (RRAM) stack over silicon CMOS that achieves comparable memory performance (read power, write energy/latency, endurance, retention, multiple bits-per-cell capability) in the same footprint as a conventional RRAM stack using front-end-of-line (FEOL) …
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Analog-to-Digital Converters for Secure and Emerging AIoT Applications
… (IMC) using resistive random-access memory (RRAM) are promising architectures to reduce latency and increase energy efficiency for IoT devices. However, interface circuitry, including analog-to-digital converters (ADCs) between RRAM and digital components, is becoming the bottleneck of the …
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Resistive Switching in Porous Low-k Dielectrics
… However, one barrier in the implementation of RRAM in the back end is the use of expensive as well as non-BEOL native material in conventional Cu/TaOx/Pt resistive devices. In this thesis, we present our research about functionality of RRAM with porous low-k dielectrics (which are a candidate …
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Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform
… properties, Resistive Random Access Memory (RRAM) is one of the prime candidates to supplant current Nonvolatile Memory (NVM) based on the floating gate (FG) MOSFET transistor, which is at the end of its scaling capability. The RRAM technology comprises two subcategories: 1) the resistive …
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Functional Oxides in Optical and Electronic Applications by Atmospheric Pressure Spatial Chemical Vapour Deposition
… are used in resistive random-access memory (RRAM) due to their ability to alter resistance states, which is crucial for non-volatile memory applications. With the growing demand for efficient data storage, and processing driven by post-CMOS AI hardware, linked to Big Data and the Internet of …
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Resistance switching of electrodeposited cuprous oxide
… resistance switching random access memory (RRAM). The results suggest formation and rupture of one or several nanoscale copper filaments as the resistance switching mechanism in the cuprous oxide films. At high electric voltage in the as-deposited state of Au/Cu<sub>2</sub>O/Au-Pd cell …
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Formation and Rupture of Nanofilaments in Metal/TaOx/Metal Resistive Switches
… (CBRAM) and Resistive Random Access Memory (RRAM) because of their excellent scaling potential, low power consumption, high switching speed, good retention and endurance properties. Although, various mechanisms have been proposed to explain the switching behavior in CBRAM devices, i.e. metal …
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All Analog CNN Accelerator with RRAMs for Fast Inference
… cells using resistive random access memory (RRAM) and computation units utilizing the analog behavior of transistors. This circuit classifies one Cifar-10 dataset image in 6µs (160k frames/s) with 2.4µJ energy per classification with an accuracy of 85%. It contains 7.5 million MAC units and …
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Mechanisms, Conditions and Applications of Filament Formation and Rupture in Resistive Memories
Resistive random access memory (RRAM), based on a two-terminal resistive switching device with a switching element sandwiched between two electrodes, has been an attractive candidate to replace flash memory owing to its simple structure, excellent scaling potential, low power consumption, high …
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New ways to tune the multi-functionality of oxide thin films for memory applications
… for acting as resistive random access memory (RRAM) devices. Second, the ferromagnetic insulating (FMI) and metallic (FMM) properties of La0.9Ba0.1MnO3 (LBMO) are tuned using VAN. La0.9Ba0.1MnO3 is FMI in bulk but usually shows metallicity in plain films. By using VAN consisting of CeO2 …
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Systems and applications for persistent memory
… memory technologies (such as PCM and RRAM) offer performance within an order of magnitude of DRAM, prompting their inclusion in the processor memory subsystem. Such load/store accessible non-volatile or persistent memory (referred to as NVM or PM) introduces an interesting new tier …
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Resistive Switching Behavior in Low-K Dielectric Compatible with CMOS Back End Process
… The resistive random access memories (RRAM) technology can be integrated into a complementary metal-oxide-semiconductor (CMOS) metal interconnect structure using standard processes employed in back-end-of-line (BEOL) interconnect fabrication. Based on this premise, the study of this …
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Highly Efficient Neuromorphic Computing Systems With Emerging Nonvolatile Memories
<p>Emerging nonvolatile memory based hardware neuromorphic computing systems have enabled the implementation of general vector-matrix multiplication in a manner to fuse computation and memory at the same physical location. However, there remain three major challenges in designing such neuromorphic …
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IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING
RESISTIVE RANDOM-ACCESS MEMORIES (RRAMS) ARE EXTENSIVELY INVESTIGATED AS A REPLACEMENT FOR FLASH MEMORIES DUE TO ITS SUPERIOR CHARACTERISTICS: HIGHER SPEED, BETTER ENDURANCE, MORE SCALABLE DESIGN AND SIMPLER FABRICATION PROCESSES. HOWEVER, DUE TO THE STOCHASTIC NATURE OF SUCH RESISTIVE SWITCHING, A …
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Scaling study of phase change memory using carbon nanotube electrodes
Demands for data storage and computer memory are growing exponentially. It is thus essential to find a new scalable, energy-efficient memory technology. We have been investigating the smallest and most energy-efficient data storage technology, based on phase change materials (PCMs) rather than …