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Showing 1 to 20 of 28 for “"RHEED"”.
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Quantitative computation of RHEED patterns
Submitted by Megan Hayes (mohayes2@illinois.edu) on 2012-05-03T17:14:52Z No. of bitstreams: 1 1997_lordi.pdf: 6020195 bytes, checksum: b6aaa430546acc00e0bb275ca0cfdc17 (MD5)
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Low-temperature molecular beam epitaxy of gallium arsenide Antisite incorporation and Rheed oscillations: A theoretical study
… of reflection high energy electron diffraction (RHEED) intensity in the low temperature (LT) molecular beam epitaxy (MBE) of (100) gallium arsenide (GaAs). A comprehensive rate equation model is proposed based on the presence and dynamics of a physisorbed arsenic (PA) riding the growth surface …
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An investigation into controlling the growth modes of ferroelectric thin films using pulsed laser deposition and RHEED
… Reflection high energy electron diffraction (RHEED) in combination with interval pulsed laser deposition (PLD) has been used to achieve a two dimensional, layer-by-layer growth mode. Crucial to this was the deposition of a unit-cell thick titanium dioxide buffer layer on the surface, the …
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Structural Characterization of Thin Films of Molecules on Solid Surfaces: Development of a Portable UHV Chamber to Bridge RHEED and SFG Spectroscopy Techniques
… of reflection high-energy electron diffraction (RHEED) and sum-frequency generation (SFG) spectroscopy techniques, which include thin films of ionic liquids (ILs) deposited by physical vapor deposition and self-assembled monolayers on gold. A thickness-dependent structural transition of ILs on …
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Self-Assembled Barium Titanate Nanoscale Films by Molecular Beam Epitaxy
… relied on a growth technique called shuttered RHEED. Shuttered RHEED controls the stoichiometry of barium titanate through the precise deposition of alternating layers of BaO and TiO2. While this approach has achieved 1% control of stoichiometry, finding self-limiting mechanisms to lock-in …
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Growth and Behaviors of InN/GaN Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy
… Reflection high energy electron diffraction (RHEED) was demonstrated to be a valuable tool for understanding the MQW growth. By associating the RHEED intensity transient features with surface atomic processes such as the adsorption/desorption of metal species, the growth process was …
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A theoretical study of surface kinetic processes in the Mbe growth of compound semiconductors
… a transition temperature at which time averaged RHEED intensity is maximum was observed. The RHEED intensity increases with temperature till the transition temperature and decreases beyond the transition temperature. The doping studies were performed for various growth conditions. The sticking …
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EPITAXIAL GROWTH AND REAL-TIME ELECTRON DIFFRACTION ANALYSIS OF ADVANCED III-V SEMICONDUCTOR-BASED QUANTUM DOTS
… the reflection high-energy electron diffraction (RHEED) technique. The existence of a sharp transition of facet arrangements and shapes near the onset of dot formation is investigated, and a dot structure bound by {2 5 11} facets is proposed. During further calculations, we observed asymmetric …
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Geometric and electronic structure of reconstructed semiconductor surfaces
… and reflection high-energy electron diffraction (RHEED), along with other techniques, have been used to examine the atomic-scale geometric and electronic properties of clean and adsorbate-covered semiconductor surfaces. The surfaces studied have been probed via core-level, valence band, and …
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III-nitride Semiconductors Grown By Plasma Assisted Molecular Beam Epitaxy
… reflection high-energy electron diffraction (RHEED). It was found that desorption of Ga atoms from the (0001) GaN surfaces under different III-V ratios deviates from the zeroth-order kinetics in that the desorption rate is independent of the coverage of adsorbed atoms. The desorption energies …
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The Structure and Composition of Metal Surfaces
… for reflection high energy electron diffraction (RHEED), low energy electron diffraction (LEED) and Auger electron spectroscopy. In the present work evaporated films of gold and clean and oxidized surfaces of copper single crystals have been studied using TEM. The gold films were used to test a …
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Magnetic and critical behavior of thin terbium(0001)/tungsten(110) films studied by electron capture spectroscopy (ECS)
… and high-energy electron diffraction (LEED and RHEED). Using electron capture spectroscopy (ECS), the surface electron spin polarization of the Tb(0001) films is studied as a function of temperature. The topmost layer is found to order ferromagnetically below a surface Curie temperature …
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Nucleation and Growth of Order in Cu(3)Au (111) Films
… direction of the sample miscut. A qualitative RHEED study confirms that a preference for one of the stacking senses is present after deposition of a few monlolayers of $\rm Cu\sb3Au.$ The observed behavior of the film can be explained by a model in which Cu and Au atoms minimize their number of …
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Wachstum und Realstruktur von epitaktischen (Al,Ga)N-Schichten
… wurden vor allem Beugungsverfahren (RHEED, HRXRD, TEM) aber auch mikroskopische Techniken (AFM, REM) eingesetzt. <br>Das Wachstum der Gruppe-III-Nitride wird durch Struktur und Beschaffenheit der Substratoberfläche stark beeinflusst. Durch geeignete Nukleations- und optimierte …
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Epitaxial Aluminum Oxide Thin Films on Niobium (110): A Study of Their Growth and Their Use in Superconducting Tunnel-Junctions
… distinct surface reconstructions. Using in situ RHEED I found that the growth of Al2O3 was highly dependent on the surface reconstruction of the underlying niobium film. Alumina films on annealed Nb had a hexagonal lattice that was under an isotropic tensile strain that relaxed with increasing …
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Angle-resolved photoemission studies of thin-film topological materials
… reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD). The electronic properties of the thin-film topological materials are studied by a combined method of angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. We have studied the …
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Excitation-Induced Ge Quantum Dot Growth on Si(100)-2X1 by Pulsed Laser Deposition
… energy electron diffraction (RHEED) and post-deposition atomic force microscopy (AFM) are used to study the growth dynamics and morphology of the QDs. A Q-switched Nd:YAG laser (λ = 1064 nm, 40 ns pulse width, 5 J/cm<sup>2</sup> fluence, and 10 Hz repetition rate) were used to …
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Sources of noise in niobium-based superconducting quantum circuits
… niobium-based Josephson junctions. Using RHEED, AFM, and TEM/STEM, I studied the epitaxy of the niobium film at the substrate interface to reduce noise due to crystal defects. I then measured flux noise in these films; the noise in the epitaxial films is lower than the comparative …
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Optische Charakterisierung von II-VI-Halbleiter-Oberflächen in Kombination mit First-Principles-Rechnungen
… den klassischen Oberflächen-Analysemethoden wie RHEED, LEED, XPS, Auger und SXRD, ein zusätzliches Werkzeug zur Charakterisierung von Oberflächen. Da die Frozen-Phonon-Näherung nicht elementarer Bestandteil des hier benutzten DFT-Programmcodes fhi96md ist, wurde diese Erweiterung im Rahmen dieser …
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Studies of ordering on surfaces and in superlattices by molecular beam epitaxy
… Cu3Au was studied by means of the intensities of RHEED satellite streaks. The order parameter was found to go to zero continuously at a temperature equal to that of the discontinuous bulk transition, within experimental uncertainty. A novel kinetic experiment was performed to examine re-ordering …
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