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Showing 1 to 20 of 21 for “"RF circuit"”.

  1. High Performance RF Circuit Design: High Temperature, Ultra-Low Phase Noise, and Low Complexity

    Advanced achievements in the area of RF circuit design led to a significant increase in availability of wireless communications in everyday life. However, the rapid growth in utilizing the RF equipment has brought several challenges in different aspects of RF circuit design. This has been …

    vt Repository record for High Performance RF Circuit Design: High Temperature, Ultra-Low Phase Noise, and Low Complexity (opens in a new tab)

  2. Analogue self-interference cancellation in full-duplex radios

    Active analogue self-interference cancellation (AASIC) techniques are used to prevent the saturation of the receiver chain in full-duplex (FD) radios. This is done by cancelling the self-interference (SI) signal before it enters the receiver chain. AASIC techniques are usually implemented together …

    zimbabwe Repository record for Analogue self-interference cancellation in full-duplex radios (opens in a new tab)

  3. Analogue self-interference cancellation in full-duplex radios

    Active analogue self-interference cancellation (AASIC) techniques are used to prevent the saturation of the receiver chain in full-duplex (FD) radios. This is done by cancelling the self-interference (SI) signal before it enters the receiver chain. AASIC techniques are usually implemented together …

    zambia Repository record for Analogue self-interference cancellation in full-duplex radios (opens in a new tab)

  4. On the Analysis, Design, and Modeling of Electrostatic Discharge Protection Devices for Analog and Radio -Frequency Integrated Circuits

    … of a vertical npn transistor suitable for ESD circuit simulation. In addition to modeling accurately the high-current and breakdown effects, we also model accurately the small-signal off-state impedance of the device using s-parameter measurements, for inclusion in RF circuit simulations. …

    uiuc Repository record for On the Analysis, Design, and Modeling of Electrostatic Discharge Protection Devices for Analog and Radio -Frequency Integrated Circuits (opens in a new tab)

  5. Electrostatic Discharge Protection and Measurement Techniques for Radio Frequency Integrated Circuits

    … to improve the measurement capability for RF circuit characterization. One of the new measurement systems is capable of detecting ESD failures in RF circuits with an improved sensitivity. The second new measurement system has a significantly higher measurement bandwidth and dynamic range, …

    uiuc Repository record for Electrostatic Discharge Protection and Measurement Techniques for Radio Frequency Integrated Circuits (opens in a new tab)

  6. Development of Direct Ion -Implanted Gallium Arsenide MESFET and Low-Actuation-Voltage RF MEM Switches

    The high-performance GaAs MESFETs will provide a solution to low-cost NMCs, and the circuit results justify the readiness of this technology in Ka-band and V-band applications. The low operation-voltage switches will facilitate the direct integration with current MMICs and provide a solution to …

    uiuc Repository record for Development of Direct Ion -Implanted Gallium Arsenide MESFET and Low-Actuation-Voltage RF MEM Switches (opens in a new tab)

  7. Leveraging free carriers effects for infrared photonic structures and devices

    … and fabrication of an integrated metatronic circuit. The third device is a room-temperature photodetector based on a resonant RF circuit. It consists a microstrip busline and a split-ring resonator that is capacitively coupled to the busline; the RF circuit is built on a semiconductor …

    uiuc Repository record for Leveraging free carriers effects for infrared photonic structures and devices (opens in a new tab)

  8. The Effect Of Hot Carrier Stress On Low Noise Amplifier Radio Frequency Performance Under Weak And Strong Inversion

    This thesis work is mainly focused on studying RF performance degradation of a low noise amplifier (LNA) circuit due to hot carrier effect (HCE) in both the weak and strong inversion regions. Since the figures of merit for the RF circuit characterization are gain, noise figure, input, and output …

    ucf

  9. Modeling And Simulation Of Long Term Degradation And Lifetime Of Deep-submicron Mos Device And Circuit

    … reliability model for advanced radio frequency RF MOS devices and implement our reliability model into SpectreRF circuit simulator via Verilog-A HDL (Hardware Description Language). This RF reliability model can be conveniently used to simulate RF circuit performance degradation

    ucf

  10. Design/System Technology Co-optimization of Gallium Nitride High Electron Mobility Transistors for Next-G 3DIC Heterogeneous Integration of Gallium Nitride and Si CMOS

    … need for the use of mmWave and subterahertz RF front ends and transistors. Gallium Nitride (GaN) transistors have continued to push the limits of high-power density, high frequency semiconductor devices. The future of GaN radio frequency (RF) circuit technology is at the intersection of …

    mit Repository record for Design/System Technology Co-optimization of Gallium Nitride High Electron Mobility Transistors for Next-G 3DIC Heterogeneous Integration of Gallium Nitride and Si CMOS (opens in a new tab)

  11. Low Phase Noise Oscillator Design. A Design Methodology for Improving Performance: Theoretical Analysis, CAD Simulations, and Prototype Building

    … in the design of low phase noise LC-tank CMOS RF oscillators. Novel analytical techniques for estimating the periodic steady-state solution, perturbation-projection vector, and phase noise/timing jitter for oscillators are presented. These techniques enable a quantitative estimate of the …

    uiuc Repository record for Low Phase Noise Oscillator Design. A Design Methodology for Improving Performance: Theoretical Analysis, CAD Simulations, and Prototype Building (opens in a new tab)

  12. Studies of coaxial multipactor in the presence of a magnetic field

    … of electron multiplication between two surfaces by secondary electron emission in resonance with an alternating electric field. They are detrimental to the performance of radio frequency (RF) systems, such as the ICRF (ion cyclotron range of frequencies) antennas for heating of plasmas in …

    mit Repository record for Studies of coaxial multipactor in the presence of a magnetic field (opens in a new tab)

  13. Digitally-Assisted RF IC Design Techniques for Reliable Performance

    … devices to attain benefits of low cost, high performance, and high integration density in digital integrated circuits. On the other hand, deep scaled technologies inextricably accompany a large process variation, supply voltage scaling, and reduction in breakdown voltages of transistors. When it …

    purdue-thes Repository record for Digitally-Assisted RF IC Design Techniques for Reliable Performance (opens in a new tab)

  14. Compact power conditioning and RF systems for a high power RF source

    … Integration, compact power conditioning and RF systems were investigated with a maximum diameter of 15.24 cm. A simulator of a flux compression generator (FCG) was built as a non-destructive test stand to evaluate the power conditioning and RF systems. The FCG simulator approximated the …

    missouri Repository record for Compact power conditioning and RF systems for a high power RF source (opens in a new tab)

  15. High field DNP and cryogenic MAS NMR : novel instrumentation and applications

    … analysis of a novel approach to high efficiency RF circuit design. The extension of DNP-NMR to 16.4T has required the development of probe technology, cryogenics, gyrotrons, and microwave transmission lines. A novel DNP probe and cryogenic instrumentation permit extended operation at 85-90K and …

    mit Repository record for High field DNP and cryogenic MAS NMR : novel instrumentation and applications (opens in a new tab)

  16. Low Power Merged LNA and Mixer Design for Medical Implant Communication Services

    … power devices. Thus the low-power design of the RF circuit is crucial for MICS applications as the power consumption of the wireless devices is mostly contributed by RF circuits. This thesis investigates low-power design of an LNA and a down-conversion mixer of a receiver for MICS applications. …

    vt Repository record for Low Power Merged LNA and Mixer Design for Medical Implant Communication Services (opens in a new tab)

  17. A VHF/UHF Voltage Controlled Oscillator in 0.5um BiCMOS

    … and take up less real estate on the printed circuit board (PCB). Major efforts are underway to reduce the number of integrated circuits (ICs) in newer designs by incorporating several functions into a single chip. Availability of newer technologies such as silicon bipolar with complementary …

    vt Repository record for A VHF/UHF Voltage Controlled Oscillator in 0.5um BiCMOS (opens in a new tab)

  18. Study Of Nanoscale Cmos Device And Circuit Reliability

    … high transistor density and the corresponding performance enhancement. For these devices, the reliability issues are the first concern for the commercialization. The major reliability issues caused by voltage and/or temperature stress are gate oxide breakdown (BD), hot carrier effects (HCs), and …

    ucf

  19. Design of Functional Active RF Metamaterials with Embedded Transistor-Based Circuits and Devices

    … can be done</p><p>through embedding active circuits in the constitutive unit cells. Active elements</p><p>are able to supplement the passive inclusions to mitigate and overcome loss and</p><p>bandwidth limitations. The inclusion of these circuits also signcantly expands the</p><p>design …

    duke Repository record for Design of Functional Active RF Metamaterials with Embedded Transistor-Based Circuits and Devices (opens in a new tab)

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