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Showing 1 to 17 of 17 for “"RF Power Amplifiers"”.
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Linearization of RF Power Amplifiers
Linearization of RF power amplifiers is surveyed, reviewed and analyzed. Cartesian feedback is specifically presented as an effective means of linearizing an efficient yet non-linear power amplifier. This reduces amplifier distortion to acceptable levels and enables the transmission of RF signals …
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Novel predistortion techniques for RF power amplifiers
… for everyone nowadays, predistortion for the RF power amplifiers in mobile phone systems becomes more and more popular. Especially, new predistortions for power amplifiers with both nonlinearities and memory effects interest the researchers. In our thesis, novel predistortion techniques are …
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Wide Range Switched Mode RF Power Amplifiers and their applications
Switched-mode power amplifiers (SMPAs) are desired that can work across a wide range of power levels and load impedances with fast response speed while maintaining high efficiency. Such designs would be valuable for many applications including plasma generation and wireless power transfer. We …
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Constant Conduction Angle Biasing for Class C Monolithic RF Power Amplifiers
… faraway user – base stations continually enforce power control. That is, nearby users must lower their transmit power. In CDMA technology, power control can be as large as 70-80dB. At low power outputs, this greatly impacts the performance of the RF power amplifier (PA) in the cellular device. For …
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High performance Deep Learning based Digital Pre-distorters for RF Power Amplifiers
… pre-distorters and compare them based on their performance towards improving the linearity of highly non-linear power amplifiers. The simulation results show that BiLSTM based DPDs work the best in terms of improving the linearity performance. We also compare two methodologies of direct learning …
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RF power amplifier linearity compensation for MRI systems
… linearization system for use with MRI RF power amplifiers was designed and simulated. The design here presented is intended to replace Analogic's (located in Peabody, Massachusetts) feed-forward, digital linearization scheme. This involved the selection and testing of components meeting …
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Broadband RF Power Amplifier Design Methodology Using Sequential Harmonic Characterization
Radio Frequency Power Amplifier (RFPA) amplifies the communication signals to the required power level for transmission. It is the most power consuming stage in a transceiver chain; consequently, any improvement in terms of dissipated power and efficiency of the power amplifier affects the overall …
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Modulated Frequency Multiplier Inverter
… such as plasma generation and wireless power transfer require high frequency power inverters (or rf power amplifiers) that are able to output a wide power range despite highly variable load reactances, while also maintaining high efficiency. Previous approaches to this problem, such as …
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Characterization of Uplink Transmit Power and Talk Time in WCDMA Networks
… is ever increasing. Of the many components, the RF power amplifiers receive the most attention as they draw significant battery current and continue to represent the largest power load on the battery. In order to improve the overall efficiency of a power amplifier, it is important to know the …
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Linear Power-Efficient RF Amplifier with Partial Positive Feedback
… schemes create signals with high peak-to-average power ratios (PAPR), exhibiting rapid changes in the signal magnitude. To accommodate these high-PAPR signals, RF power amplifiers in mobile devices must operate under backed-off gain conditions, resulting in poor power efficiency. Various …
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Digital predistortion of RF amplifiers using baseband injection for mobile broadband communications
Radio frequency (RF) power amplifiers (PAs) represent the most challenging design parts of wireless transmitters. In order to be more energy efficient, PAs should operate in nonlinear region where they produce distortion that significantly degrades the quality of signal at transmitter’s output. …
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Controllable Transformation Matching Networks for Efficient RF Impedance Matching
… and controlled delivery of radio-frequency (rf) power for semiconductor plasma processing typically relies upon tunable matching networks to transform the variable plasma load impedance to a fixed impedance suitable for most rf power amplifiers. Plasma applications require fast tuning speed …
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Microjet impingement cooling of high power-density electronics
The increasing power density of advanced electronics, and in particular Gallium Nitride (GaN) high electron mobility transistors (HEMTs) in RF power amplifiers, represents a major challenge in thermal management. Reducing the operating temperature, by means of effective cooling, improves both the …
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Reliability of W-Band InAIN/GaN High Electron Mobility Transistors
… (HEMTs) have enjoyed tremendous market growth in RF power amplifiers over the past decades. In the quest for enhancing the operating frequency of GaN HEMTs, there has been a great effort to scale down the gate length. Maintaining acceptable short-channel effects requires shrinking the barrier …
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Energy efficient radio frequency system design for mobile WiMax applications. Modelling, optimisation and measurement of radio frequency power amplifier covering WiMax bandwidth based on the combination of class AB, class B, and C operations.
… technology accounts for 3% and 2% of the global power consumption and CO2 emissions respectively. This alarming figure is on an upward trend, as future telecommunications systems and handsets will become even more power hungry since new services with higher bandwidth requirements emerge as part …
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ESD Protected SiGe HBT RFIC Power Amplifiers
… The design of ESD protection circuitry for RFIC's has been relatively slow to evolve, compared to their digital counterparts, and is now emerging as a new design challenge in RF and high-speed mixed-signal IC development. Sub-circuits which are not embedded in a single System-on-Chip (SOC), …
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Modeling gallium-nitride based high electron Mobility transistors : linking device physics to high voltage and high frequency circuit design
… high electron mobility, and high temperature performance of GaN HEMTs are the key factors for its use as HV switches in converters and active components of RF-power amplifiers. Designing circuits in both application regimes requires accurate compact device models that are grounded in physics and …