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Showing 1 to 18 of 18 for “"RF CMOS"”.

  1. Compact modelling in RF CMOS technology

    … of complementary metal-oxide-semiconductor (CMOS) technology, the RF performance of metal-oxide-semiconductor field transistors (MOSFETs) has considerably improved over the past years. Today, the standard CMOS technology has become a popular choice for realizing radio frequency (RF) …

    dcu Repository record for Compact modelling in RF CMOS technology (opens in a new tab)

  2. Design of RF CMOS Power Amplifier for UWB Applications

    … the circuit level implementation of key RF blocks like the power amplifier (PA), transmit/receive switch, low noise amplifier (LNA) and mixers in an UWB transceiver. Though expensive technologies like SiGe or GaAs have been used for transceiver realizations, the ultimate goal is to have a …

    vt Repository record for Design of RF CMOS Power Amplifier for UWB Applications (opens in a new tab)

  3. Trade-offs between performance and reliability of sub 100-nm RF-CMOS technologies

    … an understanding of the trade-offs between performance and reliability in sub 100-nm silicon-on-insulator (SOI) CMOS technologies. Such trade-offs can be used to demonstrate high performance reliable circuits in scaled technologies. Several CMOS reliability concerns such as hot-carrier stress, …

    gatech Repository record for Trade-offs between performance and reliability of sub 100-nm RF-CMOS technologies (opens in a new tab)

  4. A 0.78mm² Co-Channel Interference Canceller in 130nm SOI RF CMOS with Novel Passive Phase Shifters and Combiner Circuitry

    … temporal scheduling to prevent co-channel interference from disrupting downlink communications. This work develops a method of front end co-channel cancellation within the receive chain of a co-channel transceiver to allow for simultaneous operation. An extremely compact co-channel interference …

    carleton Repository record for A 0.78mm² Co-Channel Interference Canceller in 130nm SOI RF CMOS with Novel Passive Phase Shifters and Combiner Circuitry (opens in a new tab)

  5. The Effect Of Hot Carrier Stress On Low Noise Amplifier Radio Frequency Performance Under Weak And Strong Inversion

    This thesis work is mainly focused on studying RF performance degradation of a low noise amplifier (LNA) circuit due to hot carrier effect (HCE) in both the weak and strong inversion regions. Since the figures of merit for the RF circuit characterization are gain, noise figure, input, and output …

    ucf

  6. CMOS Transceiver Front-Ends in Mobile Communication Handsets - Architectures and Building Blocks

    … communication systems in the low-GHz range, CMOS has increasingly become the technology of choice, and the level of integration in mobile handsets has risen. The use of off-chip components, which increases the handset assembly time and costs, is preferably avoided. However, integrating a …

    lund Repository record for CMOS Transceiver Front-Ends in Mobile Communication Handsets - Architectures and Building Blocks (opens in a new tab)

  7. Six-port wireless receiver architectures

    … to construct a six-port digital receiver using RFCMOS technology has been studied. Novel models and design rules for CMOS capacitor and inductor design have been given. The various methodologies for the design of a RF CMOS MMIC low noise amplifier are also discussed and a CMOS MMIC low noise …

    qu-belfast Repository record for Six-port wireless receiver architectures (opens in a new tab)

  8. 3D Micromachined Passive Components and Active Circuit Integration for Millimeter-wave Radar Applications

    … including passive and active implementations of RF monopulse comparator networks. These architectures are enabled by a high-performance three-dimensional rectangular coaxial microwave transmission line technology known as PolyStrataTM as well as silicon-based IC technologies. A number of specific …

    vt Repository record for 3D Micromachined Passive Components and Active Circuit Integration for Millimeter-wave Radar Applications (opens in a new tab)

  9. New Concepts in Front End Design for Receivers with Large, Multiband Tuning Ranges

    … popularity due to the recent advancements in CMOS--based RFIC technology. The possibility of multiple parallel transceivers in RF CMOS suggests an approach to antenna--receiver integration using multiplexers. This dissertation describes an improved use of multiplexers to integrate antennas to …

    vt Repository record for New Concepts in Front End Design for Receivers with Large, Multiband Tuning Ranges (opens in a new tab)

  10. Low Power Merged LNA and Mixer Design for Medical Implant Communication Services

    … power devices. Thus the low-power design of the RF circuit is crucial for MICS applications as the power consumption of the wireless devices is mostly contributed by RF circuits. This thesis investigates low-power design of an LNA and a down-conversion mixer of a receiver for MICS applications. …

    vt Repository record for Low Power Merged LNA and Mixer Design for Medical Implant Communication Services (opens in a new tab)

  11. SiGe BiCMOS RF ICs and Components for High Speed Wireless Data Networks

    The advent of high-fT silicon CMOS/BiCMOS technologies has led to a dramatic upsurge in the research and development of radio and microwave frequency integrated circuits (ICs) in silicon. The integration of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) into established "digital" …

    vt Repository record for SiGe BiCMOS RF ICs and Components for High Speed Wireless Data Networks (opens in a new tab)

  12. Signal generation for millimeter wave and THz applications in InP-DHBT and InP-on-BiCMOS technologies

    … near future. Silicon-based technologies such as RF-CMOS and SiGe-BiCMOS have shown steady progress, but they are struggling to fulfill the demands due to their limitations in power-handling capability with increasing device speed. III-V technologies offer a higher potential in this regard, but do …

    tu-berlin Repository record for Signal generation for millimeter wave and THz applications in InP-DHBT and InP-on-BiCMOS technologies (opens in a new tab)

  13. The Analysis and Design of Phase-tunable Low-Power Low-Phase-Noise I/Q Signal Sources for Analog Phase Calibrated Transceivers

    … have a major impact on the overall receiver performance. Additionally, it is required that the QO synthesize precise I/Q waveforms across the signal bandwidth over process, voltage, and temperature variations for adequate image-rejection and signal modulation/demodulation. While the use of …

    vt Repository record for The Analysis and Design of Phase-tunable Low-Power Low-Phase-Noise I/Q Signal Sources for Analog Phase Calibrated Transceivers (opens in a new tab)

  14. CMOS Power Device Modeling and Amplifier Circuits

    A power amplifier (PA) is a key part of the RF front-end in transmitters for a local broadband network. Today, commercial PAs are made of III-V HEMT and HBT technology with excellent results. An integrated system-on-chip power amplifier circuit using CMOS technology for cost-effective and …

    uiuc Repository record for CMOS Power Device Modeling and Amplifier Circuits (opens in a new tab)

  15. Circuit Techniques for Multiple and Wideband Beamforming

    … different designs are implemented in TSMC 65nm RF CMOS to demonstrate different solutions. The design in this thesis have included major RF blocks in state-of-art wireless transceiver: RF receiver, local oscillator, and RF transmitter. First, a RF/analog FFT based four-channel four-beam receiver …

    umn Repository record for Circuit Techniques for Multiple and Wideband Beamforming (opens in a new tab)

  16. Silicon-Based RFIC Multi-band Transmitter Front Ends for Ultra-Wideband Communications and Sensor Applications

    Fully integrated Ultra-Wideband (UWB) RFIC transmitters are designed in Si-based technologies for applications such as wireless communications or sensor networks. UWB technology offers many unique features such as broad bandwidth, low power, accurate position location capabilities, etc. This …

    vt Repository record for Silicon-Based RFIC Multi-band Transmitter Front Ends for Ultra-Wideband Communications and Sensor Applications (opens in a new tab)

  17. Κυκλώματα υψηλών συχνοτήτων για σύστημα υπερ-ευρείας ζώνης με διαμόρφωση συχνότητας FM-UWB

    … (UWB). Συγκεκριμένα, σχεδιάζονται σε τεχνολογία CMOS 90nm και αναπτύσσονται τα πλέον κρίσιμα κυκλώματα του PLL του FM-UWB πομπού με βάση ένα σύστημα FM-UWB, το οποίο στηρίζεται στη διπλή διαμόρφωση FM ευρείας ζώνης (double wideband FM modulation). Αυτά είναι το VCO, η αντλία φορτίου, ο διαιρέτης …

    patras-thes Repository record for Κυκλώματα υψηλών συχνοτήτων για σύστημα υπερ-ευρείας ζώνης με διαμόρφωση συχνότητας FM-UWB (opens in a new tab)

  18. A CMOS Frequency Synthesizer for Wireless Sensor Network transceivers

    … fisiche, e alta affidabilità. Oggigiorno, l'interfaccia di comunicazione radio è la parte più critica nella realizzazione di un nodo wireless poiché contribuisce significativamente al consumo di potenza di tutto il sistema e impatta fortemente sulle prestazioni. In particolare il …

    catania Repository record for A CMOS Frequency Synthesizer for Wireless Sensor Network transceivers (opens in a new tab)