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Showing 1 to 2 of 2 for “"RELAXATION SEMICONDUCTORS"”.
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ΦΑΙΝΟΜΕΝΑ ΜΕΤΑΦΟΡΑΣ ΑΜΟΡΦΩΝ ΗΜΙΑΓΩΓΩΝ
… THAT IS EXPECTED FOR LOW CONDUCTIVITY AMORPHOUS SEMICONDUCTORS. VALUES OF DRIFT MOBILITY HAVE BEEN OBTAINED FROM THE STEADY STATE AND TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS. THEABOVE TECHNIQUES WERE ALSO USED TO CHARACTERISE FILMS OF GLOW DISCHARGE A-SI:HDEPOSITED UNDER DIFFERENT PREPARATION …
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Measurement of Lattice Strain and Relaxation Effects in Strained Silicon Using X-ray Diffraction and Convergent Beam Electron Diffraction
… strained silicon-based systems. While the stress relaxation caused by thinning of the strained structures to electron transparency complicates these measurements, it has been quantified and shows reasonable agreement with expected values. The relaxation values have been incorporated into the …