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Showing 1 to 20 of 28 for “"Quantum well lasers"”.
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Toward far infrared quantum well lasers
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
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A study of long wavelength strained quantum well lasers
… the device physics of long wavelength strained quantum-well lasers is explored both experimentally and theoretically. The goal of this study is to understand how to optimize laser materials (active region and cladding layer) and cavity parameters (barrier height) so that the high-temperature, …
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Modeling and characterization of strained quantum-well lasers and modulators
Strained quantum-well lasers and modulators are studied in this dissertation. Both dc and high-speed performances of these two devices are studied. Theoretical models are developed, and we show very good agreement between the theoretical and experimental results.
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Two-dimensional simulation of quantum well lasers including energy transport
… simulator for various types of semiconductor lasers for both steady and transients has been developed. The simulator is capable of spectral analysis of quantum-well semiconductor lasers, such as gain-spectrum analysis, as well as analysis of the two-dimensional current flow and optical …
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Study of carrier and gain dynamics in InGaAsN quantum well lasers
… carrier capture and escape processes in InGaAsN quantum well lasers. The carrier dynamics is investigated through a comprehensive temperature dependent steady state photoluminescence (PL) and time evolution of PL spectra. The gain dynamics is obtained from the analysis of ultrafast pump-probe …
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Study of Type-I and Type-Ii Strained Quantum -Well Lasers
Semiconductor lasers with three types of quantum wells (QWs) (type-I, staggered type-II, and broken-gap type-II QWs) are studied. For a type-I QW structure, the 1.55-pm InGaAsP and InGaAlAs QW lasers are investigated both in the steady-state and high-speed modulation schemes. We show excellent …
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Temperature-Dependent High-Speed Modulation and Wavelength Conversion Using Quantum-Well Lasers
… conversion in long-wavelength semiconductor lasers is presented. The steady-state measurement of gain is presented through four different approaches, including the direct (Hakki-Paoli) measurement of polarization-resolved spectra, correlation of gain and spontaneous emission, techniques for …
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Germanium and GeSn based Quantum Well Lasers and Nanoscale Multi-gate FETs
… communications, solar cells, power electronics, quantum computing and its periphery, optoelectronics, IOT sensors, and lately artificial intelligence. Billions of Si-based complementary transistors (CMOS) are present at the center of most computing devices used today such as HPC servers, compute …
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The self-consistent simulation of carrier transport and its effect on the modulation response in semiconductor quantum well lasers
A fully two-dimensional self-consistent quantum well laser simulator called Minilase has been developed. Both the optical and electronic device equations that describe a laser diode are discussed in detail. The dark and radiative recombination processes and the carrier transport mechanisms included …
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Visible-Spectrum Indium Gallium Phosphide Arsenide Heterostructure Lasers
… double heterojunction lasers and of single and multiple quantum-well lasers are examined.
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Threshold current and modulation response of semiconductor lasers
… carrier charge imbalance in the active region of quantum well lasers is demonstrated (in contrast to the usual presumption of charge neutrality in the region), and the resulting effect on the threshold current is examined. The investigations are performed with a simple rate equation simulator, as …
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Indium Gallium Arsenide-Gallium Arsenide-Aluminum Gallium Arsenide Strained-Layer Lasers and Laser Arrays
… confinement heterostructure strained-layer quantum well lasers are investigated in this work. The main implications of strain are examined briefly, including the importance of a critical layer thickness, strain-induced changes of the band structure, and their effects on laser performance. …
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Design, fabrication, and characterization of low-dimensional quantum devices
… as modulation-doped field effect transistors and quantum well lasers. High resolution lithography and pattern transfer techniques now make it possible to further restrict the electronic motion to lower dimensions. A variety of interesting quantum confinement phenomena have been observed in these …
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Carrier relaxation in doped quantum wells
The relaxation time of an electron in a quantum well is derived within the random-phase approximation including full multi-subband and frequency dependent screening. The resulting expression encompasses both electron-electron and electron-phonon scattering taking into account the mutual …
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Design and fabrication of quantum-dot lasers
Semiconductor lasers using quantum-dots in their active regions have been reported to exhibit significant performance advantages over their bulk semiconductor and quantum-well counterparts namely: low threshold current, high differential gain and highly temperature stable light-current …
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Strained-Layer Indium Gallium Arsenide-Gallium Arsenide-Aluminum Galium Arsenide Photonic Devices by Metalorganic Chemical Vapor Deposition
… of the substantial performance advantages of quantum well lasers relative to double heterostructure lasers, extensive efforts have been directed toward producing quantum wire systems. In view of this, the final subject of this dissertation details the fabrication and characterization of …
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Quantum well devices fabricated using selective area growth and their application in optical fiber communication
… (SAG) approach to manufacturing integrated quantum-well lasers and modulators. SAG can be successfully achieved with two major growth techniques: metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We will put more weight on SAG with MOCVD growth because certain …
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Optical properties of semiconductor quantum wires
… and optical properties of semiconductor quantum wires. For the subband structure, we employ multiband effective-mass theory and the effective bond-orbital model both of which fully account for the band mixing and material anisotropy. We also treat the structure geometry in detail taking …
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Optical properties of semiconductor quantum wires
… and optical properties of semiconductor quantum wires. For the subband structure, we employ multiband effective-mass theory and the effective bond-orbital model both of which fully account for the band mixing and material anisotropy. We also treat the structure geometry in detail taking …
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Injection locking characteristics of indium arsenide quantum dash lasers
… locking characteristics was performed on an InAs Quantum Dash (QDash) semiconductor laser for the first time. The linewidth enhancement factor(α-parameter) of a QDash laser was measured using an injection locking technique that takes advantage of the asymmetry of the injection range. Studies were …
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