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Showing 1 to 15 of 15 for “"Quantum well laser"”.
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Fabrication and Characterization of Narrow-Stripe Quantum Well Laser Diodes
More efficient semiconductor lasers will be needed in tomorrow's applications. These lasers can only be realized through the application of new device processing techniques, designed to restrict current, carrier, and/or photon flow through the lasing cavity. This work aims to evaluate a …
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LOW-TEMPERATURE CHARACTERIZATION OF A 1.55-μm MULTIPLE-QUANTUM-WELL LASER DOWN TO 10 K
A ridge-waveguide 1.55-μm semiconductor laser with a multiple-quantum-well carrier confinement structure was characterized from room temperature down to 10 K. The temperature dependence of important laser parameters, such as threshold current, differential efficiency, emission wavelength, and …
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Wavelength Modification by Thermal Annealing and Stripe Geometry Definition by Impurity-Induced Disordering in Quantum-Well Laser Diodes (Diffusion, Gallium-Arsenide, Iii-v Semiconductors)
… of thermal annealing ((TURN)900(DEGREES)C) on quantum-well laser diode properties are investigated. The shift to higher energies caused by inter-diffusion of Al and Ga at the quantum-well interfaces in modeled by a modified Poschl-Teller potential. The interdiffusion coefficient D(Al-Ga) is …
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The self-consistent simulation of carrier transport and its effect on the modulation response in semiconductor quantum well lasers
A fully two-dimensional self-consistent quantum well laser simulator called Minilase has been developed. Both the optical and electronic device equations that describe a laser diode are discussed in detail. The dark and radiative recombination processes and the carrier transport mechanisms included …
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Distributed Feedback Ridge Waveguide and Step-Graded Separate Confinement Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition
… flourished. Advancements in device physics as well as the development of coherent optical sources and high speed electronic devices have been achieved in both lattice-matched systems such as the GaAs-AlGaAs heterostructure, and strained-layer material systems such as the InGaAs-GaAs-AlGaAs …
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III-V Bismide Optoelectronic Devices
… GaSb-based type-I InGaAsSb/AlGaInAsSb quantum well laser diodes in 3-4 um mid-wavelength range, the lasing wavelength and performance of the devices are limited due to the lack of hole confinement in the active regions. In this dissertation, a novel GaSb-based GaInAsSbBi material is …
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Bipolar cascade lasers
… the design and modeling of the Bipolar Cascade Laser (BCL), a new type of quantum well laser. BCLs consist of multiple single stage lasers electrically coupled via tunnel junctions. The BCL ideally operates by having each injected electron participate in a recombination event in the topmost …
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Characterization of S-bend optical waveguides fabricated by impurity- and vacancy-induced layer disordering
… Layer Disordering (IILD) of a single GaAs quantum-well graded barrier laser structure are investigated using raised-cosine S-bend geometries. The 3-dB transition length for a 100 $\mu$m offset S-bend waveguides fabricated using the Zn, SiO$\sb2$, or In/SiO$\sb2$ IILD process is less than …
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Temperature-Dependent High-Speed Modulation and Wavelength Conversion Using Quantum-Well Lasers
… conversion in long-wavelength semiconductor lasers is presented. The steady-state measurement of gain is presented through four different approaches, including the direct (Hakki-Paoli) measurement of polarization-resolved spectra, correlation of gain and spontaneous emission, techniques for …
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Fully coupled electrical and optical simulation of vertical cavity surface emitting lasers
The two-dimensional quantum well laser simulator MINILASE has been extended in several ways. First, the underlying device equations have been modified to accommodate the cylindrical geometry of vertical cavity surface emitting lasers (VCSELs). Second, an accurate band structure using the well-known …
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Two-dimensional simulation of quantum well lasers including energy transport
… simulator for various types of semiconductor lasers for both steady and transients has been developed. The simulator is capable of spectral analysis of quantum-well semiconductor lasers, such as gain-spectrum analysis, as well as analysis of the two-dimensional current flow and optical …
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Long-wavelength gallium-indium-arsenide quantum wire lasers
… multiple quantum wire (MQWR) lasers grown on (100) on-axis InP substrates by a single-step MBE have been successfully fabricated and characterized. The QWRs were formed in situ in the (GaAs)$\sb2$/(InAs)$\sb{2.2}$ short-period-superlattice (SPS) layers by …
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Carrier relaxation in doped quantum wells
The relaxation time of an electron in a quantum well is derived within the random-phase approximation including full multi-subband and frequency dependent screening. The resulting expression encompasses both electron-electron and electron-phonon scattering taking into account the mutual …
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Analysis of Photonic Structures for Optical Networks
… of bistable devices made of bulk and quantum-well structures based on numerical and computational simulations; and analyzes optical regenerators devices based on experimental measurements. A theoretical model of the optical gain in bulk and quantum-well semiconductor structures has …
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Design, defect reduction, and dislocation tolerance of red lasers on Si (001)
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2024-05-01