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Showing 1 to 3 of 3 for “"Quantum dot growth"”.

  1. Experimental and theoretical investigation of indium phosphide quantum dot growth mechanisms

    Indium phosphide (InP) quantum dots (QDs) stand out as the most promising candidate to replace the currently commercialized cadmium-containing materials for optoelectronic applications. This thesis focuses on using experimental and theoretical methods to study growth mechanisms of InP QDs from …

    mit Repository record for Experimental and theoretical investigation of indium phosphide quantum dot growth mechanisms (opens in a new tab)

  2. Excitation-Induced Ge Quantum Dot Growth on Si(100)-2X1 by Pulsed Laser Deposition

    <p>Self-assembled Ge quantum dots (QD) are grown on Si(100)-(2×1) with laser excitation during growth processes by pulsed laser deposition (PLD). <em>In situ </em>reflection-high energy electron diffraction (RHEED) and post-deposition atomic force microscopy (AFM) are used to study the growth

    odu Repository record for Excitation-Induced Ge Quantum Dot Growth on Si(100)-2X1 by Pulsed Laser Deposition (opens in a new tab)

  3. Indium arsenide quantum dots for single photons in the communications band

    … characterizing epitaxial Indium Arsenide (InAs) quantum dots as single photon sources in the optical communications C-Band (Conventional Band; 1535 nm-1565 nm wavelength). First, the underlying theory of semiconductor quantum dots and the necessary tools from quantum optics are reviewed. Next, a …

    mit Repository record for Indium arsenide quantum dots for single photons in the communications band (opens in a new tab)