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Showing 1 to 8 of 8 for “"Quantum correction"”.
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Monte Carlo Simulation of Silicon Devices Including Quantum Correction and Strain
… simulation is advanced on two fronts. First, quantum effects are taken into account by including quantum corrections in the semiclassical Monte Carlo framework. A quantitative study of corrections based on the Wigner transport equation and the effective potential is performed, and the …
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3D Electro-thermal Monte Carlo Study of Transport in confined Silicon Devices
… highly confined architectures, the inclusion of quantum correction becomes essential. To better capture the influence of carrier confinement, the electrostatically quantum-corrected full-band MC model has the added feature of being able to incorporate subband scattering. The scattering rate …
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Enhancement of Monte Carlo Simulations on Three-Dimensional Nanoscale Semiconductor Devices
… on the position of the carrier. This way, quantum effects are explicitly taken into consideration in carrier transport. The approach has been simulated for different sizes of silicon nanowires (SiNWs). When high bias applies in the longitudinal and the transverse direction of the channel …
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Quantum mechanics on phase space : geometry and motion of the Wigner distribution
We study the Wigner phase space formulation of quantum mechanics and compare it to the Hamiltonian picture of classical mechanics. In this comparison we focus on the differences in initial conditions available to each theory as well as the differences in dynamics. First we derive new necessary …
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Classical, quantum and numerical aspects of modified theories of gravity
… energy for the non-static case and show that the quantum correction of the local theory, which is in the form of a Dirac delta function, is smeared out in the non-local theory. It is also shown that the gravitational potential energy associated with the self-interaction of the individual particles …
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AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework
… employing the semiclassical density gradient quantum correction model. It is found that the vertical TFET based on BP can achieve high on-current (>200 μA/μm) and steep subthreshold swing (SS) (average value = 24.6 mV/dec) simultaneously, due to its high mobility, direct narrow band gap, and …
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Topics in the quantization of classical field theories
Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-21T13:57:29Z No. of bitstreams: 1 1980_katz.pdf: 2240678 bytes, checksum: bba343cd35c573af717f5355a879a8c9 (MD5)
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Performance Analysis of Double Gate MOSFET Using Monte Carlo Simulation
… the current drive. Comparison is made between quantum-corrected and classical simulation results. Change in potential and concentration pro les in the quantum-corrected simulation is the result of coupling between the Schr odinger and the Poisson equations. The drain current increase compared …