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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 287 for “"Quantum Well"”.
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Modelling of quantum well electrooptical devices
Due to the technological importance of quantum well electrooptical modulators in general and, in particular, as building blocks of self-electrooptic effect devices (SEEDs), in this thesis, we have undertaken to create a theoretical model which can accurately emulate and predict, starting from basic …
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Toward far infrared quantum well lasers
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
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Design of quantum well infrared photodetectors
… distance over which, carriers are depleted from quantum wells whenever the photocurrent is larger than leakage current. This depletion capacitance is expected to be important at high frequencies, in situations where the photocurrent is much larger than the leakage current, and in QWIPs designed …
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The Effect of Polarization and InGaN Quantum Well Shape in Multiple Quantum Well Light Emitting Diode Heterostructures
… of perfectly discrete transitions between the quantum well (QW) and blocking layers when experiments have shown this to not be the case. The In concentration profile within InGaN multiple quantum well (MQW) devices shows much smoother and delayed transitions indicative of indium diffusion and …
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Material processing of quantum well infrared photodetectors
… thermally annealed (RTA) GaAs/AlGaAs multiple quantum well (MQW) infrared (IR) photodetectors (QWIPs) epitaxially grown on GaAs and Si substrates is presented. The advances in epitaxial growth allow the precise control of the dimensions, doping, and matrix concentration of the MQW. Therefore, …
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InGaAs Quantum-Well MOSFETs for logic applications
… fabrication process for scaled InGaAs Quantum-Well MOSFETs (QW-MOSFETs) is developed. The device architectural design emphasizes scalability, performance and manufacturability by making extensive use of dry etching and Si-compatible materials. The fabrication sequence yields precise …
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Study of quantum dot and quantum well photodetectors
A study of quantum dots-in-well infrared photodetectors (QDIPs) yields results useful for the creation of a two-colour QDIP. Quantum dot infrared photodetectors (QDIPs) have been shown to be a key technology in mid and long wavelength infrared detection due to their potential for normal incidence …
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Coupled Quantum Well to Quantum Dot Heterostructure Laser
Data (infrared wavelengths) are presented showing that it is advantageous to locate strain-matching auxiliary InGaAs layers QWs within tunneling distance of a single QD layer of an AlGaAs-GaAs-InGaAs-InAs QD heterostructure laser to realize also smaller size QDs of greater density and uniformity. …
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Quantum well intersubband photodetectors in focal plane arrays
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1996.
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Phase coherent transport phenomena in HgTe quantum well structures
… thesis describes experiments with mercury based quantum well structures. This narrow gap material provides a very good template to study spin related effects. It exhibits large Zeeman spin splitting and Rashba spin-orbit splitting. The latter is at least four to five times larger than in III-V …
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Towards multiple quantum well optically pumped far infrared lasers
… pumped lasers based on GaAs/AlGaAs multiple quantum well (MQW) structures are a potential coherent source in the far infrared (FIR) wavelengths. The FIR (~ 30 to 300 µm) is a region within the electromagnetic spectrum that has seen relatively little development. No practical solid-state …
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High-speed characterizations of single quantum-well transistor laser
… history of development and device structure, as well as the carrier dynamics in the TL will be first presented to provide background discussion. The focus of this thesis will be on the methods of high-speed characterizations on TLs and data of the optical modulation bandwidth, f-3dB, and …
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Iii-V Multiple Quantum Well Long-Wavelength Infrared Detectors
The results of the research provide information of III-V intersubband optoelectronic properties which are fundamental to the future sensitive, low-cost, large long wavelength infrared focal-plane arrays.
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Disorder Effects in Aluminum-Gallium - Arsenide Quantum-Well Heterostructures
… of Al(,x)Ga(,1-x)As-GaAs (or AlAs-GaAs) quantum-well heterostructures (QWH's) grown by metalorganic chemical vapor deposition (MO-CVD) are investigated. Various forms of disorder in QWH's are studied and compared by employing photoluminescence techniques.
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Disorder Effects in Aluminum Gallium Arsenide Quantum-Well Heterostructures
Submitted by Jesse Garrison (jagarris@illinois.edu) on 2011-06-08T17:37:45Z No. of bitstreams: 1 1981_laidig.pdf: 3533030 bytes, checksum: 8ff5bf7f4a09ac9be7fa72eb51e93b98 (MD5)
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A study of long wavelength strained quantum well lasers
… the device physics of long wavelength strained quantum-well lasers is explored both experimentally and theoretically. The goal of this study is to understand how to optimize laser materials (active region and cladding layer) and cavity parameters (barrier height) so that the high-temperature, …
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Electronic transport and structure of a surface quantum well
… We grew and measured InAs surface quantum wells grown on GaSb buffers, characterizing their electronic properties and preparing measurements of the proximity effect in the wells. While electrons in the InAs surface quantum wells are scattered more than those buried InAs quantum …
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Disordered quantum well waveguide fabrication and ultrafast optical characterization
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1990.
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