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Showing 1 to 1 of 1 for “"Quantum Drift-Diffusion Modeling"”.
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GaN heterojunction FET device Fabrication, Characterization and Modeling
… efforts to develop the growth, processing, and modeling technologies for GaN-based Heterojunction Field Effect Transistors (HFETs). The interest in investigating GaN HFETs is motivated by the advantageous material properties of nitride semiconductor such as large band gap, large breakdown …